JPH0443413B2 - - Google Patents
Info
- Publication number
- JPH0443413B2 JPH0443413B2 JP239486A JP239486A JPH0443413B2 JP H0443413 B2 JPH0443413 B2 JP H0443413B2 JP 239486 A JP239486 A JP 239486A JP 239486 A JP239486 A JP 239486A JP H0443413 B2 JPH0443413 B2 JP H0443413B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- growth
- type
- atoms
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 13
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP239486A JPS62159415A (ja) | 1986-01-08 | 1986-01-08 | 単結晶半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP239486A JPS62159415A (ja) | 1986-01-08 | 1986-01-08 | 単結晶半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62159415A JPS62159415A (ja) | 1987-07-15 |
| JPH0443413B2 true JPH0443413B2 (OSRAM) | 1992-07-16 |
Family
ID=11528020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP239486A Granted JPS62159415A (ja) | 1986-01-08 | 1986-01-08 | 単結晶半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62159415A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335238A (ja) * | 1992-06-03 | 1993-12-17 | Daido Hoxan Inc | 半導体デバイスの製法 |
| JPH05335237A (ja) * | 1992-06-03 | 1993-12-17 | Daido Hoxan Inc | 半導体デバイスの製法 |
| JP2721086B2 (ja) * | 1992-06-03 | 1998-03-04 | 大同ほくさん株式会社 | 半導体デバイスの製法 |
-
1986
- 1986-01-08 JP JP239486A patent/JPS62159415A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62159415A (ja) | 1987-07-15 |
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