JPS62159415A - 単結晶半導体薄膜の製造方法 - Google Patents

単結晶半導体薄膜の製造方法

Info

Publication number
JPS62159415A
JPS62159415A JP239486A JP239486A JPS62159415A JP S62159415 A JPS62159415 A JP S62159415A JP 239486 A JP239486 A JP 239486A JP 239486 A JP239486 A JP 239486A JP S62159415 A JPS62159415 A JP S62159415A
Authority
JP
Japan
Prior art keywords
silicon
growth
mixed crystal
thin film
semiconductor thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP239486A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0443413B2 (OSRAM
Inventor
Hisaaki Aizaki
尚昭 相崎
Toru Tatsumi
徹 辰巳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP239486A priority Critical patent/JPS62159415A/ja
Publication of JPS62159415A publication Critical patent/JPS62159415A/ja
Publication of JPH0443413B2 publication Critical patent/JPH0443413B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP239486A 1986-01-08 1986-01-08 単結晶半導体薄膜の製造方法 Granted JPS62159415A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP239486A JPS62159415A (ja) 1986-01-08 1986-01-08 単結晶半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP239486A JPS62159415A (ja) 1986-01-08 1986-01-08 単結晶半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS62159415A true JPS62159415A (ja) 1987-07-15
JPH0443413B2 JPH0443413B2 (OSRAM) 1992-07-16

Family

ID=11528020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP239486A Granted JPS62159415A (ja) 1986-01-08 1986-01-08 単結晶半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS62159415A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335237A (ja) * 1992-06-03 1993-12-17 Daido Hoxan Inc 半導体デバイスの製法
JPH05335238A (ja) * 1992-06-03 1993-12-17 Daido Hoxan Inc 半導体デバイスの製法
JPH05335236A (ja) * 1992-06-03 1993-12-17 Daido Hoxan Inc 半導体デバイスの製法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335237A (ja) * 1992-06-03 1993-12-17 Daido Hoxan Inc 半導体デバイスの製法
JPH05335238A (ja) * 1992-06-03 1993-12-17 Daido Hoxan Inc 半導体デバイスの製法
JPH05335236A (ja) * 1992-06-03 1993-12-17 Daido Hoxan Inc 半導体デバイスの製法

Also Published As

Publication number Publication date
JPH0443413B2 (OSRAM) 1992-07-16

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