JPH0435439B2 - - Google Patents
Info
- Publication number
- JPH0435439B2 JPH0435439B2 JP58000398A JP39883A JPH0435439B2 JP H0435439 B2 JPH0435439 B2 JP H0435439B2 JP 58000398 A JP58000398 A JP 58000398A JP 39883 A JP39883 A JP 39883A JP H0435439 B2 JPH0435439 B2 JP H0435439B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- deposition
- etching
- single crystal
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- 238000000151 deposition Methods 0.000 claims description 49
- 230000008021 deposition Effects 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000012159 carrier gas Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000006911 nucleation Effects 0.000 description 11
- 238000010899 nucleation Methods 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33895882A | 1982-01-12 | 1982-01-12 | |
| US338958 | 1982-01-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58120595A JPS58120595A (ja) | 1983-07-18 |
| JPH0435439B2 true JPH0435439B2 (enrdf_load_stackoverflow) | 1992-06-11 |
Family
ID=23326867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58000398A Granted JPS58120595A (ja) | 1982-01-12 | 1983-01-05 | マスク層上に単結晶シリコン層を形成する方法 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS58120595A (enrdf_load_stackoverflow) |
| DE (1) | DE3300716A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2522695B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2113465B (enrdf_load_stackoverflow) |
| IN (1) | IN157312B (enrdf_load_stackoverflow) |
| IT (1) | IT1173651B (enrdf_load_stackoverflow) |
| SE (1) | SE462756B (enrdf_load_stackoverflow) |
| YU (1) | YU6083A (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6214424A (ja) * | 1985-07-11 | 1987-01-23 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2505754B2 (ja) * | 1986-07-11 | 1996-06-12 | キヤノン株式会社 | 光電変換装置の製造方法 |
| US4829016A (en) * | 1987-10-19 | 1989-05-09 | Purdue Research Foundation | Bipolar transistor by selective and lateral epitaxial overgrowth |
| US5403771A (en) * | 1990-12-26 | 1995-04-04 | Canon Kabushiki Kaisha | Process for producing a solar cell by means of epitaxial growth process |
| JP3272532B2 (ja) * | 1993-12-27 | 2002-04-08 | 富士通株式会社 | 半導体装置の製造方法 |
| JP4832022B2 (ja) * | 2005-07-29 | 2011-12-07 | 株式会社日立国際電気 | 基板処理装置 |
| JP2010141079A (ja) * | 2008-12-11 | 2010-06-24 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| JP2010147142A (ja) * | 2008-12-17 | 2010-07-01 | Hitachi Kokusai Electric Inc | 半導体製造方法と装置 |
| US20110272011A1 (en) * | 2009-06-05 | 2011-11-10 | Amberwave, Inc. | Solar Cell |
| JP2012054364A (ja) * | 2010-08-31 | 2012-03-15 | Nobuyuki Akiyama | シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池 |
| CN115198352B (zh) * | 2022-08-24 | 2024-03-26 | 西安奕斯伟材料科技股份有限公司 | 一种外延生长方法及外延晶圆 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL271203A (enrdf_load_stackoverflow) * | 1960-01-15 | |||
| US3746608A (en) * | 1963-05-14 | 1973-07-17 | Nitto Boseki Co Ltd | Shaped article of synthetic resin having mechanically disordered orientation |
| DE2059116C3 (de) * | 1970-12-01 | 1974-11-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines Halbleiterbauelementes |
| US3945864A (en) * | 1974-05-28 | 1976-03-23 | Rca Corporation | Method of growing thick expitaxial layers of silicon |
| DE3008058A1 (de) * | 1980-03-03 | 1981-09-17 | Robert Bosch Gmbh, 7000 Stuttgart | Verfahren zur herstellung einer monolithisch integrierten halbleiterschaltungsanordnung |
-
1982
- 1982-09-10 IN IN1046/CAL/82A patent/IN157312B/en unknown
- 1982-12-30 GB GB08236936A patent/GB2113465B/en not_active Expired
- 1982-12-31 FR FR8222189A patent/FR2522695B1/fr not_active Expired
-
1983
- 1983-01-04 SE SE8300040A patent/SE462756B/sv not_active IP Right Cessation
- 1983-01-05 JP JP58000398A patent/JPS58120595A/ja active Granted
- 1983-01-10 IT IT19043/83A patent/IT1173651B/it active
- 1983-01-11 DE DE19833300716 patent/DE3300716A1/de active Granted
- 1983-01-12 YU YU00060/83A patent/YU6083A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2522695A1 (fr) | 1983-09-09 |
| GB2113465A (en) | 1983-08-03 |
| DE3300716A1 (de) | 1983-07-21 |
| SE8300040L (sv) | 1983-07-13 |
| DE3300716C2 (enrdf_load_stackoverflow) | 1993-01-21 |
| YU6083A (en) | 1985-10-31 |
| IT1173651B (it) | 1987-06-24 |
| JPS58120595A (ja) | 1983-07-18 |
| SE8300040D0 (sv) | 1983-01-04 |
| GB2113465B (en) | 1986-08-06 |
| IT8319043A0 (it) | 1983-01-10 |
| FR2522695B1 (fr) | 1987-02-27 |
| SE462756B (sv) | 1990-08-27 |
| IN157312B (enrdf_load_stackoverflow) | 1986-03-01 |
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