YU6083A - Growth method of a monocrystalline silicon on a masking layer - Google Patents

Growth method of a monocrystalline silicon on a masking layer

Info

Publication number
YU6083A
YU6083A YU00060/83A YU6083A YU6083A YU 6083 A YU6083 A YU 6083A YU 00060/83 A YU00060/83 A YU 00060/83A YU 6083 A YU6083 A YU 6083A YU 6083 A YU6083 A YU 6083A
Authority
YU
Yugoslavia
Prior art keywords
monocrystalline silicon
masking layer
growth method
growth
masking
Prior art date
Application number
YU00060/83A
Other languages
English (en)
Inventor
Jr J F Corboy
L L Jastrzebski
S C Blackstone
Jr R H Pagliaro
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23326867&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=YU6083(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rca Corp filed Critical Rca Corp
Publication of YU6083A publication Critical patent/YU6083A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
YU00060/83A 1982-01-12 1983-01-12 Growth method of a monocrystalline silicon on a masking layer YU6083A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33895882A 1982-01-12 1982-01-12

Publications (1)

Publication Number Publication Date
YU6083A true YU6083A (en) 1985-10-31

Family

ID=23326867

Family Applications (1)

Application Number Title Priority Date Filing Date
YU00060/83A YU6083A (en) 1982-01-12 1983-01-12 Growth method of a monocrystalline silicon on a masking layer

Country Status (8)

Country Link
JP (1) JPS58120595A (enrdf_load_stackoverflow)
DE (1) DE3300716A1 (enrdf_load_stackoverflow)
FR (1) FR2522695B1 (enrdf_load_stackoverflow)
GB (1) GB2113465B (enrdf_load_stackoverflow)
IN (1) IN157312B (enrdf_load_stackoverflow)
IT (1) IT1173651B (enrdf_load_stackoverflow)
SE (1) SE462756B (enrdf_load_stackoverflow)
YU (1) YU6083A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214424A (ja) * 1985-07-11 1987-01-23 Fujitsu Ltd 半導体装置の製造方法
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US4829016A (en) * 1987-10-19 1989-05-09 Purdue Research Foundation Bipolar transistor by selective and lateral epitaxial overgrowth
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
JP4832022B2 (ja) * 2005-07-29 2011-12-07 株式会社日立国際電気 基板処理装置
JP2010141079A (ja) * 2008-12-11 2010-06-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2010147142A (ja) * 2008-12-17 2010-07-01 Hitachi Kokusai Electric Inc 半導体製造方法と装置
US20110272011A1 (en) * 2009-06-05 2011-11-10 Amberwave, Inc. Solar Cell
JP2012054364A (ja) * 2010-08-31 2012-03-15 Nobuyuki Akiyama シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池
CN115198352B (zh) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 一种外延生长方法及外延晶圆

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL271203A (enrdf_load_stackoverflow) * 1960-01-15
US3746608A (en) * 1963-05-14 1973-07-17 Nitto Boseki Co Ltd Shaped article of synthetic resin having mechanically disordered orientation
DE2059116C3 (de) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines Halbleiterbauelementes
US3945864A (en) * 1974-05-28 1976-03-23 Rca Corporation Method of growing thick expitaxial layers of silicon
DE3008058A1 (de) * 1980-03-03 1981-09-17 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zur herstellung einer monolithisch integrierten halbleiterschaltungsanordnung

Also Published As

Publication number Publication date
FR2522695A1 (fr) 1983-09-09
GB2113465A (en) 1983-08-03
DE3300716A1 (de) 1983-07-21
SE8300040L (sv) 1983-07-13
DE3300716C2 (enrdf_load_stackoverflow) 1993-01-21
JPH0435439B2 (enrdf_load_stackoverflow) 1992-06-11
IT1173651B (it) 1987-06-24
JPS58120595A (ja) 1983-07-18
SE8300040D0 (sv) 1983-01-04
GB2113465B (en) 1986-08-06
IT8319043A0 (it) 1983-01-10
FR2522695B1 (fr) 1987-02-27
SE462756B (sv) 1990-08-27
IN157312B (enrdf_load_stackoverflow) 1986-03-01

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