JPH0431858A - マスクの製作方法 - Google Patents
マスクの製作方法Info
- Publication number
- JPH0431858A JPH0431858A JP2248344A JP24834490A JPH0431858A JP H0431858 A JPH0431858 A JP H0431858A JP 2248344 A JP2248344 A JP 2248344A JP 24834490 A JP24834490 A JP 24834490A JP H0431858 A JPH0431858 A JP H0431858A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- phase inversion
- photoresist film
- etching
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR90-7607 | 1990-05-25 | ||
KR1019900007607A KR920009369B1 (ko) | 1990-05-25 | 1990-05-25 | 마스크의 제작방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0431858A true JPH0431858A (ja) | 1992-02-04 |
Family
ID=19299430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2248344A Pending JPH0431858A (ja) | 1990-05-25 | 1990-09-18 | マスクの製作方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0431858A (it) |
KR (1) | KR920009369B1 (it) |
DE (1) | DE4031413A1 (it) |
FR (1) | FR2662518A1 (it) |
GB (1) | GB2244349A (it) |
IT (1) | IT9021589A1 (it) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07140633A (ja) * | 1992-11-13 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | リム型の位相シフト・マスクの形成方法 |
KR100532382B1 (ko) * | 1998-05-26 | 2006-01-27 | 삼성전자주식회사 | 반도체장치 제조용 림형 위상 반전 마스크 및그 제조방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2641362B2 (ja) * | 1991-02-27 | 1997-08-13 | エイ・ティ・アンド・ティ・コーポレーション | リソグラフィー方法および位相シフトマスクの作製方法 |
US5244759A (en) * | 1991-02-27 | 1993-09-14 | At&T Bell Laboratories | Single-alignment-level lithographic technique for achieving self-aligned features |
KR100688562B1 (ko) * | 2005-07-25 | 2007-03-02 | 삼성전자주식회사 | 림 타입 포토 마스크의 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02211451A (ja) * | 1989-02-13 | 1990-08-22 | Toshiba Corp | 露光マスク,露光マスクの製造方法及びこれを用いた露光方法 |
JPH03269531A (ja) * | 1990-03-20 | 1991-12-02 | Sony Corp | 位相シフトマスクの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0090924B1 (en) * | 1982-04-05 | 1987-11-11 | International Business Machines Corporation | Method of increasing the image resolution of a transmitting mask and improved masks for performing the method |
JPH0690504B2 (ja) * | 1985-06-21 | 1994-11-14 | 株式会社日立製作所 | ホトマスクの製造方法 |
CA1313792C (en) * | 1986-02-28 | 1993-02-23 | Junji Hirokane | Method of manufacturing photo-mask and photo-mask manufactured thereby |
US5234780A (en) * | 1989-02-13 | 1993-08-10 | Kabushiki Kaisha Toshiba | Exposure mask, method of manufacturing the same, and exposure method using the same |
EP0653679B1 (en) * | 1989-04-28 | 2002-08-21 | Fujitsu Limited | Mask, mask producing method and pattern forming method using mask |
EP0437376B1 (en) * | 1990-01-12 | 1997-03-19 | Sony Corporation | Phase shifting masks and methods of manufacture |
-
1990
- 1990-05-25 KR KR1019900007607A patent/KR920009369B1/ko not_active IP Right Cessation
- 1990-09-18 JP JP2248344A patent/JPH0431858A/ja active Pending
- 1990-09-26 FR FR9011855A patent/FR2662518A1/fr not_active Withdrawn
- 1990-09-27 IT IT021589A patent/IT9021589A1/it not_active Application Discontinuation
- 1990-09-28 GB GB9021149A patent/GB2244349A/en not_active Withdrawn
- 1990-10-04 DE DE4031413A patent/DE4031413A1/de not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02211451A (ja) * | 1989-02-13 | 1990-08-22 | Toshiba Corp | 露光マスク,露光マスクの製造方法及びこれを用いた露光方法 |
JPH03269531A (ja) * | 1990-03-20 | 1991-12-02 | Sony Corp | 位相シフトマスクの製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07140633A (ja) * | 1992-11-13 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | リム型の位相シフト・マスクの形成方法 |
KR100532382B1 (ko) * | 1998-05-26 | 2006-01-27 | 삼성전자주식회사 | 반도체장치 제조용 림형 위상 반전 마스크 및그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
IT9021589A1 (it) | 1991-11-26 |
DE4031413A1 (de) | 1991-11-28 |
GB9021149D0 (en) | 1990-11-14 |
KR910020802A (ko) | 1991-12-20 |
KR920009369B1 (ko) | 1992-10-15 |
FR2662518A1 (fr) | 1991-11-29 |
GB2244349A (en) | 1991-11-27 |
IT9021589A0 (it) | 1990-09-27 |
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