JPH0431858A - Manufacture of mask - Google Patents
Manufacture of maskInfo
- Publication number
- JPH0431858A JPH0431858A JP2248344A JP24834490A JPH0431858A JP H0431858 A JPH0431858 A JP H0431858A JP 2248344 A JP2248344 A JP 2248344A JP 24834490 A JP24834490 A JP 24834490A JP H0431858 A JPH0431858 A JP H0431858A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- phase inversion
- photoresist film
- etching
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はマスクの製作方法に関し、特に、パターン（ｐ
ａｔｔｅｒｎ）の解像力を向上させる位相反転領域を有
するマスクの製作方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a mask, and in particular, to a method for manufacturing a mask.
The present invention relates to a method of manufacturing a mask having a phase inversion region that improves the resolution of the attern.
一般的に、半導体装置の製造において、フォトリソグラ
フィ（Ｐｈｏｔｏｌｉｔｈｏｇｒａｐｈｙ）方法を利用
してウェーハ（Ｗａｆｅｒ）の表面に集積回路のパター
ンを形成する。Generally, in manufacturing semiconductor devices, an integrated circuit pattern is formed on the surface of a wafer using a photolithography method.
フォトリソグラフィ一方法は、マスク（Ｍａｓｋ）に紫
外線（ＬｌｌｔｒＩＩＶｉｏｌｅｔ ；以下、ＵＶと称
する）などを照射してウェーハの表面に塗布されている
感光膜（Ｐｈｏｔｏｒｅｓｉｓｔ）に所望のパターンを
選択的に複写する露光（Ｅｘｐｏｓｅ）工程を含む。One method of photolithography is exposure in which a mask is irradiated with ultraviolet rays (hereinafter referred to as UV) to selectively copy a desired pattern onto a photoresist coated on the surface of a wafer. (Expose) step.
露光方法にはコンタクト（Ｃｏｎｔａｃｔ）方法、近接
（Ｐｒｏｘｉｍｉｔｙ）方法、及び、プロジェクション
（Ｐｒｏｊｅｃｔｉｏｎ）方法などがあったが、近年、
半導体装置の超高集積化が進むにつれて、回路の線幅が
微細になり、前述した方法の利用は限界がある。There were exposure methods such as contact method, proximity method, and projection method, but in recent years,
As semiconductor devices become increasingly highly integrated, the line width of circuits becomes finer, and there are limits to the use of the above-described method.
また、他の露光方法として、ウェーハステッピング（Ｗ
ａｆｅｒ Ｓｔｅｐｐｉｎｇ）方法がある。前記ウェー
ハステッピング方法はチップ（ｃｈ ｉ ｐ）パターン
の５〜１０倍程度の大きさを有するマスクを使用してス
テップアンドリピート（Ｓｔｅｐ−ａｎｄ−ｒｅｐｅａ
ｔ）方法で露光するもので、微細な線幅が得られる。In addition, as another exposure method, wafer stepping (W
There is a further Stepping method. The wafer stepping method is a step-and-repeat method using a mask having a size about 5 to 10 times that of a chip pattern.
t) method, a fine line width can be obtained.
ところが、ウェーハステッピング方法は照射されるＵＶ
などがマスクパターンを通過する際に回折（ｄｔｆｆｒ
ａｃｔｉｏｎ）され、感光膜に複写されるパターンの解
像力（Ｒｅｓｏｌｕｔｉｏｎ）を低下させるので、１６
Ｍ ＤＲＡＭ以上の集積度を有する半導体装置の製造に
適用できなかった。However, the wafer stepping method uses UV irradiation.
When passing through the mask pattern, diffraction (dtffr
16 because it reduces the resolution of the pattern copied onto the photoresist film.
It could not be applied to the manufacture of semiconductor devices having a higher degree of integration than M DRAM.
このため、マスクに光が照射されて所定パターンを通過
する際に隣接パターンを通過する光を１８０°位相反転
（Ｐｈａｓｅ ５ｈｉｆｔ）させて光の回折を防止する
ことにより、パターンの解像力を向上させる方法が提示
されている。すなわち、位相反転層（或いは領域）を有
するマスクは所定パターンの形成された部分以外の部分
に照射される光を１８０°位相反転させるので、光の明
るさ（Ｉｎｔｅｎｓｆｔｙ）がゼロ（Ｚｅｒｏ）の点を
得ることができる。Therefore, when light is irradiated onto a mask and passes through a predetermined pattern, the light passing through an adjacent pattern is inverted by 180 degrees (Phase 5shift) to prevent light diffraction, thereby improving the resolution of the pattern. is presented. In other words, since a mask having a phase inversion layer (or region) inverts the phase of the light irradiated onto areas other than the area where the predetermined pattern is formed by 180 degrees, the point where the brightness (Intensfty) of the light is zero (Zero) can be obtained.
第５図Ａから第５図りは、従来の位相反転層を有するマ
スクの製作工程図である。FIGS. 5A to 5A are manufacturing process diagrams of a conventional mask having a phase shift layer.
第５図Ａに示すように、ガラス基板１上にマスク平板（
Ｍａｓｋ ｐｌａｔｅ） ３と、感光Ｍ５を順次に形成
する。前記マスク平板３はＣｒ、エマルジョン（Ｅｍｕ
ｌｓｉｏｎ）または酸化鉄などより形成されている。As shown in FIG. 5A, a mask flat plate (
Mask plate) 3 and photosensitive plate M5 are sequentially formed. The mask flat plate 3 is made of Cr, emulsion (Emu
iron oxide) or iron oxide.
第５図Ｂに示すように、ＵＶを利用して感光膜５に焦点
板（Ｒｅｔｉｃｌｅ）のパターンを複写（露光）する。As shown in FIG. 5B, a pattern of a reticle is copied (exposed) onto the photoresist film 5 using UV light.
その後、感光膜５を現像（ＤｅｖｅｌｏｐＩｌｅｎｔ）
Ｌ、この感光膜５の露光された部分を除去する。そし
て、蝕刻マスクとして前記感光膜５を利用して前記マス
ク平板３の露出された部分を蝕刻してパターンを形成す
る。After that, the photoresist film 5 is developed (DevelopIlent).
L, the exposed portion of this photoresist film 5 is removed. Then, using the photoresist film 5 as an etching mask, the exposed portion of the mask plate 3 is etched to form a pattern.
第５図Ｃに示すように、前記感光膜５を除去してマスク
平板３を露出させた後、ガラス基板に形成されたマスク
平板３を検査して欠陥を修理（ｒｅｐａｔｒ）する、続
いて、前記ガラス基板１の露出された部分とマスク平板
３０表面に感光膜７を塗布する。As shown in FIG. 5C, after removing the photoresist film 5 to expose the mask plate 3, the mask plate 3 formed on the glass substrate is inspected and defects are repaired. A photoresist film 7 is applied to the exposed portion of the glass substrate 1 and the surface of the mask plate 30.
第５図りに示すように、焦点板（Ｒｅｔｉｃｌｅ）を使
用することなく前記ガラス基板１の下部表面を通じてＵ
Ｖを照射する。この際、前記マスク平板３が不透明なの
で、前記ガラス基板１の表面上に形成された感光膜７の
み露光される。続いて、前記感光膜７を現像し、露光さ
れた部分を除去する。その後、蝕刻マスクとして前記感
光膜７を利用してマスク平板３を水平にオーバーエッチ
（Ｏｖｅｒｅｔｃｈ）する、前記感光膜７は除去されな
いで、マスクの位相反転層で利用される。As shown in the fifth diagram, the U
Irradiate V. At this time, since the mask plate 3 is opaque, only the photoresist film 7 formed on the surface of the glass substrate 1 is exposed. Subsequently, the photoresist film 7 is developed and the exposed portions are removed. Thereafter, the mask plate 3 is horizontally overetched using the photoresist film 7 as an etching mask.The photoresist film 7 is not removed but is used as a phase shift layer of the mask.
前述した方法で製作したマスクでは位相反転層で利用さ
れる感光膜の厚さがとても重要であり、二の感光膜の厚
さはスパッタリング方法として感光溶液の粘度と感光溶
液を塗布するときのスパッタリング装置の回転速度によ
り制御される。In the mask manufactured by the method described above, the thickness of the photoresist film used in the phase inversion layer is very important, and the thickness of the second photoresist film depends on the viscosity of the photoresist solution and the sputtering process used when applying the photoresist solution. Controlled by the rotation speed of the device.
半導体素子のフォトマスク工程で照射される光を１８０
°位相反転させるための感光膜の厚さは、λ
（ｄ＋；感光膜の厚さ、λ；照射される光の波長、ｎＩ
；感光膜の屈折率）
である。したがって、位相反転層で利用される感光膜の
厚さが前記式を充足すると、感光膜の表面に入射される
光を位相反転させて光の明るさ（Ｉｎｔｅｎｓｉｔｙ）
のゼロポイントが得られてパターンの解像力は良好にな
る。The light irradiated in the photomask process of semiconductor devices is
°The thickness of the photoresist film for phase inversion is λ (d+; thickness of photoresist film, λ: wavelength of irradiated light, nI
; refractive index of the photoresist film). Therefore, when the thickness of the photoresist film used in the phase inversion layer satisfies the above formula, the phase of the light incident on the surface of the photoresist film is inverted and the brightness (intensity) of the light is increased.
The zero point is obtained, and the resolution of the pattern is good.
しかしながら、従来のマスクの製作方法によれば、検査
及び修理後に再びフォトマスキングとマスク平板をオー
バーエツチングするため、その工程が非常に複雑になる
という問題点があった。However, according to the conventional mask manufacturing method, photomasking and over-etching of the mask plate are performed again after inspection and repair, which makes the process very complicated.
また、感光溶液の粘度と感光溶液塗布時の回転速度を制
御することにより、位相反転層の厚さを調整するため、
位相反転層の厚さが調整しにくく、ガラス基板とマスク
平板との段差によって感光膜のトポグラフィ−（ｔｏｐ
ｏｇｒａｐｈｙ）が不良になり、位相反転層の厚さが不
均一になるという問題点もあった。In addition, the thickness of the phase reversal layer can be adjusted by controlling the viscosity of the photosensitive solution and the rotation speed during application of the photosensitive solution.
It is difficult to adjust the thickness of the phase inversion layer, and the topography of the photoresist film (top
There are also problems in that the thickness of the phase reversal layer becomes non-uniform.
更に、位相反転層を感光膜で形成するため、マスクが損
傷し易く、マスクが損なわれた時に位相反転層を再び形
成して使えないという不都合もあった。Furthermore, since the phase shift layer is formed of a photoresist film, the mask is easily damaged, and when the mask is damaged, the phase shift layer cannot be re-formed and used.
本発明は上記に鑑みてなされたものであって、簡単な工
程で位相反転領域を有するマスクを製作し得ることを第
１の目的とする。The present invention has been made in view of the above, and a first object thereof is to be able to manufacture a mask having a phase inversion region through a simple process.
また、半永久的な位相反転領域を有するマスクを製作し
得ることを第２の目的とする。A second object is to be able to manufacture a mask having a semi-permanent phase inversion region.
本発明は上記の目的を達成するために、位相反転領域を
有するマスクの製作方法において、透明な基板表面に不
透明なマスクプレートと感光膜を塗布する工程と、感光
膜の所定部分を露光及び現像して、マスクプレートの所
定部分を露出させる工程と、マスクプレートの露出され
た部分を蝕刻して前記基板の所定部分を露出させる工程
と、基板を所定厚さで蝕刻してパターン領域を形成する
工程と、マスクプレートを側面蝕刻して位相反転領域を
形成する工程と、感光膜を除去する工程から成るマスク
の製作方法を提供するものである。In order to achieve the above object, the present invention provides a method for manufacturing a mask having a phase inversion region, which includes the steps of applying an opaque mask plate and a photoresist film to the surface of a transparent substrate, and exposing and developing a predetermined portion of the photoresist film. exposing a predetermined portion of the mask plate; etching the exposed portion of the mask plate to expose a predetermined portion of the substrate; and etching the substrate to a predetermined thickness to form a pattern area. The present invention provides a method for manufacturing a mask, which includes a step of etching the sides of a mask plate to form a phase inversion region, and a step of removing a photoresist film.
本発明のマスクの製作方法は、透明な基板表面に不透明
なマスクプレートと感光膜を塗布し、感光膜の所定部分
を露光及び現像して、マスクプレートの所定部分を露出
させ、基板を所定厚さで蝕刻してパターン領域を形成し
、マスクプレートを側面蝕刻して位相反転領域を形成し
、その後、感光膜を除去する。The mask manufacturing method of the present invention involves coating the surface of a transparent substrate with an opaque mask plate and a photoresist film, exposing and developing a predetermined portion of the photoresist film to expose a predetermined portion of the mask plate, and forming the substrate to a predetermined thickness. Then, the mask plate is side-etched to form a pattern area, and the mask plate is side-etched to form a phase inversion area, and then the photoresist film is removed.
以下、添付した図面を参照して本発明の詳細な説明する
。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
第１図Ａから第１図りは本発明によるマスク製作の一実
施例を示した工程図である。The first drawings from FIG. 1A are process diagrams showing one embodiment of mask manufacturing according to the present invention.
第１図Ａに示すように、−船釣なガラスよりなる基板１
１の表面にマスク平板１３と感光膜１５を順次に形成す
る。前記マスク平板１３はＣｒ、酸化鉄またはエマルシ
ヨンなどを用いて約１０００人の厚さで形成される。As shown in FIG. 1A, - a substrate 1 made of glass;
A mask plate 13 and a photoresist film 15 are sequentially formed on the surface of the photoresist 1. The mask plate 13 is made of Cr, iron oxide, emulsion, or the like, and has a thickness of about 1000 nm.
第１図Ｂに示すように、前記感光膜１５にＵＶなどで焦
点板（Ｒｅｔｉｃｌｅ）のパターンを露光させる。As shown in FIG. 1B, the photoresist film 15 is exposed to UV light to form a reticle pattern.
次に、前記感光膜１５の露光された部分を現像してマス
ク平板１３の所定部分を露出させる。その後、前記感光
膜１５の除去されていない部分を蝕刻マスクとして前記
マスク平板１３の露出された部分を蝕刻する。前記マス
ク平板１３がＣｒより形成される場合には蝕刻溶液とし
て塩酸または硝酸などが用いられる。また、前記マスク
平板１３の厚さが１０００人程度色情いので、側面蝕刻
は無視できる。Next, the exposed portion of the photoresist film 15 is developed to expose a predetermined portion of the mask plate 13. Thereafter, the exposed portion of the mask plate 13 is etched using the unremoved portion of the photoresist film 15 as an etching mask. When the mask plate 13 is made of Cr, hydrochloric acid or nitric acid is used as the etching solution. Also, since the thickness of the mask plate 13 is about 1000 mm, the side surface etching can be ignored.
第１図Ｃに示すように、前記感光膜１５を蝕刻マスクと
してガラスエツチング液（Ｇｌａｓｓ ｅｔｃｂａｎｔ
）などで基板１１の露出された部分を所定の深さで蝕刻
する。前記で基板１１の蝕刻された部分と蝕刻されてい
ない部分との厚さの差ｄは、λ
とならなければならない。As shown in FIG. 1C, a glass etching solution is applied using the photoresist film 15 as an etching mask.
) etc. to etch the exposed portion of the substrate 11 to a predetermined depth. The thickness difference d between the etched portion and the unetched portion of the substrate 11 should be λ.
第１図りに示すように、前記感光膜１５を蝕刻マスクで
利用して塩酸または硝酸などで前記マスク平板１３を側
面蝕刻する。上記の工程で露出された基板１工は位相反
転領域工９となり、この位相反転領域１９０幅Ｗは０．
２〜０．３μ−の範囲が適当である。また、基板１工の
蝕刻された部分はパターン領域１７となる。次に、前記
感光膜１５を除去してマスクを完成する。As shown in the first diagram, the sides of the mask plate 13 are etched using hydrochloric acid or nitric acid using the photoresist film 15 as an etching mask. The substrate 1 exposed in the above process becomes a phase inversion region 9, and the width W of this phase inversion region 190 is 0.
A range of 2 to 0.3 .mu.- is suitable. Further, the etched portion of the substrate 1 becomes a pattern area 17. Next, the photoresist film 15 is removed to complete the mask.
第２図と第３図は、前記マスクにＵＶなどの光を照射す
る時にパターン領域エフと位相反転領域１９を通過する
光の位相状態との光の強さをそれぞれ示す図面である。FIGS. 2 and 3 are drawings showing the intensity of light in the pattern area F and the phase state of the light passing through the phase inversion area 19, respectively, when the mask is irradiated with light such as UV light.
前記第２図で放物線ａはパターン領域１７を、放物線す
は位相反転領域１９を通過する光の位相を示している。In FIG. 2, the parabola a indicates the phase of light passing through the pattern region 17, and the parabola S indicates the phase of light passing through the phase inversion region 19.
位相反転領域１９を通過する光はパターン領域１７を通
過する光と１８０°位相反転される。The phase of the light passing through the phase inversion region 19 is reversed by 180° with respect to the light passing through the pattern region 17.
また、前記第３図で放物線ａ′はパターン領域１７を、
放物線ｂ′は位相反転領域１９を通過する光の強さを示
している。図示の如く、放物線ａ゛とｂｏは光の強さが
ゼロ（Ｚｅｒｏ）点で合う。すなわち、パターン領域１
７と位相反転領域１９との間に光の強さがゼロであるゼ
ロ点（Ｚｅｒｏ Ｐｏ１ｎｔ）がある。In addition, in FIG. 3, the parabola a' defines the pattern area 17,
A parabola b' indicates the intensity of light passing through the phase inversion region 19. As shown in the figure, parabolas a' and bo meet at a point where the light intensity is zero. That is, pattern area 1
There is a zero point (Zero Point) where the intensity of light is zero between 7 and the phase inversion region 19.
第４図は、本発明により製作されたマスクを半導体装置
の製造工程に使った結果の一例を示した図面である。FIG. 4 is a drawing showing an example of the result of using the mask manufactured according to the present invention in the manufacturing process of a semiconductor device.
２１は半導体基板を、２３は感光膜を示す。前記図面で
２５は位相位相領域１９を通過した光により露光及び現
像された部分である。21 represents a semiconductor substrate, and 23 represents a photoresist film. In the drawings, reference numeral 25 indicates a portion exposed and developed by the light that has passed through the phase region 19.
また、２７は露光時にパターン領域１７と位相反転領域
１９との間の光の強さがゼロであるところと対応される
ところで、感光膜２３のパターンの解像力が良好である
ことを示す。Further, 27 corresponds to a point where the intensity of light between the pattern area 17 and the phase inversion area 19 is zero during exposure, indicating that the pattern resolution of the photoresist film 23 is good.
以上説明したように、本発明のマスクの製作方法は、基
板に同一の感光膜を蝕刻マスクとして利用してパターン
領域と位相反転領域を形成するため、製作工程が簡単で
あり、またパターン領域と位相反転領域との厚さの差を
調整しやすい。したがって、本発明は、位相反転領域と
パターン領域との厚さの差を蝕刻により正確に調整でき
、この位相反転領域を基板の一部分で形成するため、寿
命が半永久的なマスクを手軽く製作することができる。As explained above, the mask manufacturing method of the present invention uses the same photoresist film on the substrate as an etching mask to form the pattern area and the phase inversion area, so the manufacturing process is simple, and the pattern area and Easy to adjust the difference in thickness with the phase inversion region. Therefore, according to the present invention, the difference in thickness between the phase inversion region and the pattern region can be precisely adjusted by etching, and since the phase inversion region is formed from a part of the substrate, it is possible to easily produce a mask with a semi-permanent life. be able to.
第１図Ａ〜第１図りは本発明のマスクの製作方法を示す
説明図、第２図及び第３図は光を照射する時にマスクを
通過した光の状態を示す説明図、第４図は本発明により
製作されるマスクを半導体装置の製造工程に使用した結
果の一例を示す説明図、第５図Ａ〜第５図りは従来のマ
スクの製作方法を示す説明図である。
符号の説明
１１−〜−−−−−−基板 １３−・〜−−−−・
マスクプレート１５−・・−−−一感光膜 １７−−
−−−−−−パターン領域１９−・・・−位相反転領域Figures 1 A to 1 are explanatory diagrams showing the method of manufacturing a mask of the present invention, Figures 2 and 3 are explanatory diagrams showing the state of light passing through the mask when irradiating light, and Figure 4 is an explanatory diagram showing the state of light passing through the mask when irradiating light. An explanatory view showing an example of the result of using a mask manufactured according to the present invention in a manufacturing process of a semiconductor device, and FIGS. 5A to 5A are explanatory views showing a conventional mask manufacturing method. Explanation of symbols 11--------- Board 13---------
Mask plate 15-----One photosensitive film 17--
--------Pattern area 19---Phase inversion area
Claims (3)
、 透明な基板表面に不透明なマスクプレートと感光膜を塗
布する工程と、 前記感光膜の所定部分を露光及び現像して、前記マスク
プレートの所定部分を露出させる工程と、前記マスクプ
レートの露出された部分を蝕刻して前記基板の所定部分
を露出させる工程と、前記基板を所定厚さで蝕刻してパ
ターン領域を形成する工程と、 前記マスクプレートを側面蝕刻して位相反転領域を形成
する工程と、 前記感光膜を除去する工程から成ることを特徴とするマ
スクの製作方法。(1) A method for manufacturing a mask having a phase inversion region, which includes the steps of: coating an opaque mask plate and a photoresist film on the surface of a transparent substrate; and exposing and developing a predetermined portion of the photoresist film to form a predetermined portion of the mask plate. exposing a portion of the mask plate; etching the exposed portion of the mask plate to expose a predetermined portion of the substrate; etching the substrate to a predetermined thickness to form a pattern area; A method for manufacturing a mask, comprising the steps of forming a phase inversion region by etching a side surface of a plate, and removing the photoresist film.
と位相反転領域をそれぞれ通過する光が位相反転される
ように蝕刻することを特徴とするマスクの製作方法。(2) The method of manufacturing a mask according to claim 1, wherein in the step of forming the pattern area, etching is performed so that the phases of the lights passing through the pattern area and the phase inversion area are inverted.
することを特徴とするマスクの製作方法。(3) The method of manufacturing a mask according to claim 2, wherein the phase inversion region is formed with a width of about 0.2 to 0.3 μm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR90-7607 | 1990-05-25 | ||
| KR1019900007607A KR920009369B1 (en) | 1990-05-25 | 1990-05-25 | Manufactuirng method of wafer mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0431858A true JPH0431858A (en) | 1992-02-04 |
Family
ID=19299430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2248344A Pending JPH0431858A (en) | 1990-05-25 | 1990-09-18 | Manufacture of mask |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0431858A (en) |
| KR (1) | KR920009369B1 (en) |
| DE (1) | DE4031413A1 (en) |
| FR (1) | FR2662518A1 (en) |
| GB (1) | GB2244349A (en) |
| IT (1) | IT9021589A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07140633A (en) * | 1992-11-13 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | Formation method of rim-type phase-shift mask |
| KR100532382B1 (en) * | 1998-05-26 | 2006-01-27 | 삼성전자주식회사 | Apparatus of rim typed phase shift mask used for manufacturing semiconductor device & manufacturing method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244759A (en) * | 1991-02-27 | 1993-09-14 | At&T Bell Laboratories | Single-alignment-level lithographic technique for achieving self-aligned features |
| JP2641362B2 (en) * | 1991-02-27 | 1997-08-13 | エイ・ティ・アンド・ティ・コーポレーション | Lithography method and manufacturing method of phase shift mask |
| KR100688562B1 (en) * | 2005-07-25 | 2007-03-02 | 삼성전자주식회사 | Method of manufacturing rim type photo mask |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02211451A (en) * | 1989-02-13 | 1990-08-22 | Toshiba Corp | Exposure mask, manufacture of exposure mask, and exposing method using the same |
| JPH03269531A (en) * | 1990-03-20 | 1991-12-02 | Sony Corp | Production of phase shift mask |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0090924B1 (en) * | 1982-04-05 | 1987-11-11 | International Business Machines Corporation | Method of increasing the image resolution of a transmitting mask and improved masks for performing the method |
| JPH0690504B2 (en) * | 1985-06-21 | 1994-11-14 | 株式会社日立製作所 | Photomask manufacturing method |
| CA1313792C (en) * | 1986-02-28 | 1993-02-23 | Junji Hirokane | Method of manufacturing photo-mask and photo-mask manufactured thereby |
| US5234780A (en) * | 1989-02-13 | 1993-08-10 | Kabushiki Kaisha Toshiba | Exposure mask, method of manufacturing the same, and exposure method using the same |
| EP0653679B1 (en) * | 1989-04-28 | 2002-08-21 | Fujitsu Limited | Mask, mask producing method and pattern forming method using mask |
| KR0163437B1 (en) * | 1990-01-12 | 1999-02-01 | 오가 노리오 | Phase shifting masks and method thereof |
-
1990
- 1990-05-25 KR KR1019900007607A patent/KR920009369B1/en not_active IP Right Cessation
- 1990-09-18 JP JP2248344A patent/JPH0431858A/en active Pending
- 1990-09-26 FR FR9011855A patent/FR2662518A1/en not_active Withdrawn
- 1990-09-27 IT IT021589A patent/IT9021589A1/en not_active Application Discontinuation
- 1990-09-28 GB GB9021149A patent/GB2244349A/en not_active Withdrawn
- 1990-10-04 DE DE4031413A patent/DE4031413A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02211451A (en) * | 1989-02-13 | 1990-08-22 | Toshiba Corp | Exposure mask, manufacture of exposure mask, and exposing method using the same |
| JPH03269531A (en) * | 1990-03-20 | 1991-12-02 | Sony Corp | Production of phase shift mask |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07140633A (en) * | 1992-11-13 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | Formation method of rim-type phase-shift mask |
| KR100532382B1 (en) * | 1998-05-26 | 2006-01-27 | 삼성전자주식회사 | Apparatus of rim typed phase shift mask used for manufacturing semiconductor device & manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR910020802A (en) | 1991-12-20 |
| KR920009369B1 (en) | 1992-10-15 |
| DE4031413A1 (en) | 1991-11-28 |
| IT9021589A1 (en) | 1991-11-26 |
| GB9021149D0 (en) | 1990-11-14 |
| IT9021589A0 (en) | 1990-09-27 |
| GB2244349A (en) | 1991-11-27 |
| FR2662518A1 (en) | 1991-11-29 |
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