JPH0418709B2 - - Google Patents

Info

Publication number
JPH0418709B2
JPH0418709B2 JP5610384A JP5610384A JPH0418709B2 JP H0418709 B2 JPH0418709 B2 JP H0418709B2 JP 5610384 A JP5610384 A JP 5610384A JP 5610384 A JP5610384 A JP 5610384A JP H0418709 B2 JPH0418709 B2 JP H0418709B2
Authority
JP
Japan
Prior art keywords
high voltage
gate
erasing
generation circuit
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5610384A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60200574A (ja
Inventor
Masaaki Terasawa
Nobuyuki Sato
Kazusato Ujiie
Shinji Nabeya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd filed Critical Hitachi Microcomputer System Ltd
Priority to JP59056103A priority Critical patent/JPS60200574A/ja
Publication of JPS60200574A publication Critical patent/JPS60200574A/ja
Publication of JPH0418709B2 publication Critical patent/JPH0418709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP59056103A 1984-03-26 1984-03-26 不揮発性半導体記憶装置 Granted JPS60200574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59056103A JPS60200574A (ja) 1984-03-26 1984-03-26 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59056103A JPS60200574A (ja) 1984-03-26 1984-03-26 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS60200574A JPS60200574A (ja) 1985-10-11
JPH0418709B2 true JPH0418709B2 (enrdf_load_stackoverflow) 1992-03-27

Family

ID=13017762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59056103A Granted JPS60200574A (ja) 1984-03-26 1984-03-26 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS60200574A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754632B2 (ja) * 1985-10-25 1995-06-07 日立超エル・エス・アイエンジニアリング 半導体記憶装置
JP2515703B2 (ja) * 1985-10-25 1996-07-10 株式会社日立製作所 Ｅｅｐｒｏｍ装置
JPH0799634B2 (ja) * 1985-11-01 1995-10-25 株式会社日立製作所 Ｅｅｐｒｏｍ装置
DE4403520C2 (de) * 1994-02-04 2002-04-25 Gold Star Electronics Flash-EEPROM mit Dreifachwannen-CMOS-Struktur
US5491657A (en) * 1995-02-24 1996-02-13 Advanced Micro Devices, Inc. Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells

Also Published As

Publication number Publication date
JPS60200574A (ja) 1985-10-11

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