JPH0340956B2 - - Google Patents

Info

Publication number
JPH0340956B2
JPH0340956B2 JP57121419A JP12141982A JPH0340956B2 JP H0340956 B2 JPH0340956 B2 JP H0340956B2 JP 57121419 A JP57121419 A JP 57121419A JP 12141982 A JP12141982 A JP 12141982A JP H0340956 B2 JPH0340956 B2 JP H0340956B2
Authority
JP
Japan
Prior art keywords
transistor
electrode line
mnos
mos transistor
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57121419A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5911682A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57121419A priority Critical patent/JPS5911682A/ja
Publication of JPS5911682A publication Critical patent/JPS5911682A/ja
Publication of JPH0340956B2 publication Critical patent/JPH0340956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP57121419A 1982-07-13 1982-07-13 半導体不揮発性記憶装置 Granted JPS5911682A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57121419A JPS5911682A (ja) 1982-07-13 1982-07-13 半導体不揮発性記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57121419A JPS5911682A (ja) 1982-07-13 1982-07-13 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JPS5911682A JPS5911682A (ja) 1984-01-21
JPH0340956B2 true JPH0340956B2 (enrdf_load_stackoverflow) 1991-06-20

Family

ID=14810681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57121419A Granted JPS5911682A (ja) 1982-07-13 1982-07-13 半導体不揮発性記憶装置

Country Status (1)

Country Link
JP (1) JPS5911682A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6078826U (ja) * 1983-11-04 1985-06-01 日本ノーシヨン工業株式会社 釦取付機における方向設定装置
JPS60156129U (ja) * 1984-03-26 1985-10-17 ゴンドラ工業株式会社 飾懸止釦取付用カシメ機械の下型コマの回動阻止装置
JP4623782B2 (ja) * 1999-10-15 2011-02-02 スパンション エルエルシー 半導体記憶装置及びその使用方法
KR100386611B1 (ko) * 2000-05-08 2003-06-02 주식회사 하이닉스반도체 플래쉬 메모리 셀의 어레이와 그를 이용한 데이터프로그램방법과 소거방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54137933A (en) * 1978-04-18 1979-10-26 Sharp Corp Programmable nonvolatile rom

Also Published As

Publication number Publication date
JPS5911682A (ja) 1984-01-21

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