JPS54137933A - Programmable nonvolatile rom - Google Patents
Programmable nonvolatile romInfo
- Publication number
- JPS54137933A JPS54137933A JP4611978A JP4611978A JPS54137933A JP S54137933 A JPS54137933 A JP S54137933A JP 4611978 A JP4611978 A JP 4611978A JP 4611978 A JP4611978 A JP 4611978A JP S54137933 A JPS54137933 A JP S54137933A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- mosqm
- mosq1
- memory
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Abstract
PURPOSE:To obtain a programmable nonvolatile ROM of simple constitution with a function of rewriting to each cell of the memory, by using a double gate type MOS with a storage function. CONSTITUTION:The 1st n-channel MOSQ1 is connected to the control gate of N-channel rewritable MOSQM of double Si gate structure with a storage function, and the 2nd MOSQ2 is to the source side of MOSQM so as to constitute a cell unit. The gate of the 1st MOSQ1 is led outside of the cell via line X1, and the gate of the 2nd MOSQ2 is via line X2; a corresponding cell unit is selected from the memory matrix of the above-mentioned circuit constitutin according to the input state of signals to respective lines X1 and X2. The other terminal of the 1st MOSQ1 is connected to write line Y1, and the drain terminal of memory MOSQM is to line Y2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4611978A JPS54137933A (en) | 1978-04-18 | 1978-04-18 | Programmable nonvolatile rom |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4611978A JPS54137933A (en) | 1978-04-18 | 1978-04-18 | Programmable nonvolatile rom |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54137933A true JPS54137933A (en) | 1979-10-26 |
JPS5751194B2 JPS5751194B2 (en) | 1982-10-30 |
Family
ID=12738098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4611978A Granted JPS54137933A (en) | 1978-04-18 | 1978-04-18 | Programmable nonvolatile rom |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54137933A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5911682A (en) * | 1982-07-13 | 1984-01-21 | Citizen Watch Co Ltd | Semiconductor nonvolatile storage device |
US4566080A (en) * | 1983-07-11 | 1986-01-21 | Signetics Corporation | Byte wide EEPROM with individual write circuits |
US4578777A (en) * | 1983-07-11 | 1986-03-25 | Signetics Corporation | One step write circuit arrangement for EEPROMS |
US4677590A (en) * | 1981-12-29 | 1987-06-30 | Fujitsu Limited | Nonvolatile semiconductor memory circuit including dummy sense amplifiers |
US4761768A (en) * | 1985-03-04 | 1988-08-02 | Lattice Semiconductor Corporation | Programmable logic device |
US5001668A (en) * | 1988-03-09 | 1991-03-19 | Kabushiki Kaisha Toshiba | Nonvolatile memory circuit device with low power consumption and wide operating voltage range |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211831A (en) * | 1975-07-18 | 1977-01-29 | Matsushita Electric Ind Co Ltd | Memory control unit |
-
1978
- 1978-04-18 JP JP4611978A patent/JPS54137933A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211831A (en) * | 1975-07-18 | 1977-01-29 | Matsushita Electric Ind Co Ltd | Memory control unit |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4677590A (en) * | 1981-12-29 | 1987-06-30 | Fujitsu Limited | Nonvolatile semiconductor memory circuit including dummy sense amplifiers |
JPS5911682A (en) * | 1982-07-13 | 1984-01-21 | Citizen Watch Co Ltd | Semiconductor nonvolatile storage device |
JPH0340956B2 (en) * | 1982-07-13 | 1991-06-20 | ||
US4566080A (en) * | 1983-07-11 | 1986-01-21 | Signetics Corporation | Byte wide EEPROM with individual write circuits |
US4578777A (en) * | 1983-07-11 | 1986-03-25 | Signetics Corporation | One step write circuit arrangement for EEPROMS |
US4761768A (en) * | 1985-03-04 | 1988-08-02 | Lattice Semiconductor Corporation | Programmable logic device |
US5001668A (en) * | 1988-03-09 | 1991-03-19 | Kabushiki Kaisha Toshiba | Nonvolatile memory circuit device with low power consumption and wide operating voltage range |
Also Published As
Publication number | Publication date |
---|---|
JPS5751194B2 (en) | 1982-10-30 |
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