JPS54137933A - Programmable nonvolatile rom - Google Patents

Programmable nonvolatile rom

Info

Publication number
JPS54137933A
JPS54137933A JP4611978A JP4611978A JPS54137933A JP S54137933 A JPS54137933 A JP S54137933A JP 4611978 A JP4611978 A JP 4611978A JP 4611978 A JP4611978 A JP 4611978A JP S54137933 A JPS54137933 A JP S54137933A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
gate
cell
line
mosqm
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4611978A
Other versions
JPS5751194B2 (en )
Inventor
Keizo Sakiyama
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Abstract

PURPOSE:To obtain a programmable nonvolatile ROM of simple constitution with a function of rewriting to each cell of the memory, by using a double gate type MOS with a storage function. CONSTITUTION:The 1st n-channel MOSQ1 is connected to the control gate of N-channel rewritable MOSQM of double Si gate structure with a storage function, and the 2nd MOSQ2 is to the source side of MOSQM so as to constitute a cell unit. The gate of the 1st MOSQ1 is led outside of the cell via line X1, and the gate of the 2nd MOSQ2 is via line X2; a corresponding cell unit is selected from the memory matrix of the above-mentioned circuit constitutin according to the input state of signals to respective lines X1 and X2. The other terminal of the 1st MOSQ1 is connected to write line Y1, and the drain terminal of memory MOSQM is to line Y2.
JP4611978A 1978-04-18 1978-04-18 Expired JPS5751194B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4611978A JPS5751194B2 (en) 1978-04-18 1978-04-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4611978A JPS5751194B2 (en) 1978-04-18 1978-04-18

Publications (2)

Publication Number Publication Date
JPS54137933A true true JPS54137933A (en) 1979-10-26
JPS5751194B2 JPS5751194B2 (en) 1982-10-30

Family

ID=12738098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4611978A Expired JPS5751194B2 (en) 1978-04-18 1978-04-18

Country Status (1)

Country Link
JP (1) JPS5751194B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911682A (en) * 1982-07-13 1984-01-21 Citizen Watch Co Ltd Semiconductor nonvolatile storage device
US4566080A (en) * 1983-07-11 1986-01-21 Signetics Corporation Byte wide EEPROM with individual write circuits
US4578777A (en) * 1983-07-11 1986-03-25 Signetics Corporation One step write circuit arrangement for EEPROMS
US4677590A (en) * 1981-12-29 1987-06-30 Fujitsu Limited Nonvolatile semiconductor memory circuit including dummy sense amplifiers
US4761768A (en) * 1985-03-04 1988-08-02 Lattice Semiconductor Corporation Programmable logic device
US5001668A (en) * 1988-03-09 1991-03-19 Kabushiki Kaisha Toshiba Nonvolatile memory circuit device with low power consumption and wide operating voltage range

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211831A (en) * 1975-07-18 1977-01-29 Matsushita Electric Ind Co Ltd Memory control unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211831A (en) * 1975-07-18 1977-01-29 Matsushita Electric Ind Co Ltd Memory control unit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677590A (en) * 1981-12-29 1987-06-30 Fujitsu Limited Nonvolatile semiconductor memory circuit including dummy sense amplifiers
JPS5911682A (en) * 1982-07-13 1984-01-21 Citizen Watch Co Ltd Semiconductor nonvolatile storage device
JPH0340956B2 (en) * 1982-07-13 1991-06-20
US4566080A (en) * 1983-07-11 1986-01-21 Signetics Corporation Byte wide EEPROM with individual write circuits
US4578777A (en) * 1983-07-11 1986-03-25 Signetics Corporation One step write circuit arrangement for EEPROMS
US4761768A (en) * 1985-03-04 1988-08-02 Lattice Semiconductor Corporation Programmable logic device
US5001668A (en) * 1988-03-09 1991-03-19 Kabushiki Kaisha Toshiba Nonvolatile memory circuit device with low power consumption and wide operating voltage range

Also Published As

Publication number Publication date Type
JP1158990C (en) grant
JPS5751194B2 (en) 1982-10-30 grant

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