JPS5759377A - Line sensor - Google Patents
Line sensorInfo
- Publication number
- JPS5759377A JPS5759377A JP55134718A JP13471880A JPS5759377A JP S5759377 A JPS5759377 A JP S5759377A JP 55134718 A JP55134718 A JP 55134718A JP 13471880 A JP13471880 A JP 13471880A JP S5759377 A JPS5759377 A JP S5759377A
- Authority
- JP
- Japan
- Prior art keywords
- turned
- dis
- trs
- read out
- signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
PURPOSE:To simplify an overall constitution by incorporating MOS transistors made of an amorphous material into a photosensor part made of the same amorphous material as an integraed body and decreasing the number of switching elements and the number of bonding of the wirings. CONSTITUTION:A second MOS switching element B1 is turned ON at first, then a first MOS switching element A1 and an element B2 are concurrently turned On. Under this state, third switching elements C1-C128 are sequentailly turned ON. Then signals stored in first group photodiodes DIs S1-D128 are read out. MOS transistors Trs Q1-Q128 corresponding to element A1 are divided into two groups and connected to elements B1 and B2, respectively. After the element B1 has been turned ON and the Trs Q1-Q64have been completely risen, the element A1 is turned ON. Therefore, the signals from the DIs D1-D64 are read out during the time period where the element B1 is ON. When the element B1 is turned OFF, the element B2 has been already turned ON, and the Trs Q65-Q128 has been completely risen up. Therefore the signals in the DIs D65-D128 are read out.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55134718A JPS5759377A (en) | 1980-09-27 | 1980-09-27 | Line sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55134718A JPS5759377A (en) | 1980-09-27 | 1980-09-27 | Line sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5759377A true JPS5759377A (en) | 1982-04-09 |
Family
ID=15134968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55134718A Pending JPS5759377A (en) | 1980-09-27 | 1980-09-27 | Line sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5759377A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5773563A (en) * | 1980-10-24 | 1982-05-08 | Fujitsu Ltd | Image sensor drive system |
JPS598480A (en) * | 1982-07-06 | 1984-01-17 | Oki Electric Ind Co Ltd | Driving method of photoelectric converting element |
JPS5963507A (en) * | 1982-10-05 | 1984-04-11 | Oki Electric Ind Co Ltd | Driving method of line sensor |
JPS62171154A (en) * | 1986-01-24 | 1987-07-28 | Canon Inc | Photosensor |
JPS62171155A (en) * | 1986-01-24 | 1987-07-28 | Canon Inc | Manufacture of photosensor |
JPH03166450A (en) * | 1989-11-21 | 1991-07-18 | Misawa Homes Co Ltd | House building method and coupling structure between unit construction part and framework construction part |
US5990489A (en) * | 1996-12-24 | 1999-11-23 | Canon Kabushiki Kaisha | Thin film semiconductor apparatus and production method thereof |
-
1980
- 1980-09-27 JP JP55134718A patent/JPS5759377A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5773563A (en) * | 1980-10-24 | 1982-05-08 | Fujitsu Ltd | Image sensor drive system |
JPS6126865B2 (en) * | 1980-10-24 | 1986-06-23 | Fujitsu Ltd | |
JPS598480A (en) * | 1982-07-06 | 1984-01-17 | Oki Electric Ind Co Ltd | Driving method of photoelectric converting element |
JPS5963507A (en) * | 1982-10-05 | 1984-04-11 | Oki Electric Ind Co Ltd | Driving method of line sensor |
JPS62171154A (en) * | 1986-01-24 | 1987-07-28 | Canon Inc | Photosensor |
JPS62171155A (en) * | 1986-01-24 | 1987-07-28 | Canon Inc | Manufacture of photosensor |
JPH03166450A (en) * | 1989-11-21 | 1991-07-18 | Misawa Homes Co Ltd | House building method and coupling structure between unit construction part and framework construction part |
US5990489A (en) * | 1996-12-24 | 1999-11-23 | Canon Kabushiki Kaisha | Thin film semiconductor apparatus and production method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0028916A3 (en) | A semiconductor memory device | |
JPS5325324A (en) | Address selection system | |
JPS5759377A (en) | Line sensor | |
JPS5437462A (en) | Complementary mos circuit device | |
JPS56138969A (en) | Photoelectric converter | |
JPS5623025A (en) | Circuit device | |
JPS5725726A (en) | Synchronous decoder | |
JPS51147280A (en) | Semiconductor device | |
EP0280243A3 (en) | Semiconductor device | |
JPS56163587A (en) | Semiconductor memory | |
JPS5237780A (en) | Integrated composite semiconductor device | |
JPS5210087A (en) | Structure of semiconductor integrated circuit | |
JPS57192119A (en) | Complementary mos type sequence circuit | |
JPS5237333A (en) | Collision detecting device | |
JPS5391653A (en) | Circuit of decision by majority | |
JPS5360555A (en) | Mos-type integrated circuit device | |
JPS57197930A (en) | Logical circuit | |
JPS56117394A (en) | Two phase dynamic shift register | |
JPS53121589A (en) | Semiconductor logic circuit device | |
JPS54118742A (en) | Decoder circuit | |
JPS5217732A (en) | Integrated circuit unit | |
JPS5348657A (en) | Signal control circuit | |
JPS57116401A (en) | Frequency multiplying circuit | |
JPS6424626A (en) | Digital control type variable capacitor device | |
JPS5397357A (en) | Driving circuit by transistor |