JPS5237780A - Integrated composite semiconductor device - Google Patents

Integrated composite semiconductor device

Info

Publication number
JPS5237780A
JPS5237780A JP50113873A JP11387375A JPS5237780A JP S5237780 A JPS5237780 A JP S5237780A JP 50113873 A JP50113873 A JP 50113873A JP 11387375 A JP11387375 A JP 11387375A JP S5237780 A JPS5237780 A JP S5237780A
Authority
JP
Japan
Prior art keywords
semiconductor device
integrated composite
composite semiconductor
integrated
sattic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50113873A
Other languages
Japanese (ja)
Other versions
JPS5753988B2 (en
Inventor
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP50113873A priority Critical patent/JPS5237780A/en
Publication of JPS5237780A publication Critical patent/JPS5237780A/en
Publication of JPS5753988B2 publication Critical patent/JPS5753988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:An integrated composite semiconductor device consisting of a semiconductor device, such as MIS Tr, which is suitable for adaptation to a sattic type semiconductor memory unit, and a resistor to be connected to same.
JP50113873A 1975-09-19 1975-09-19 Integrated composite semiconductor device Granted JPS5237780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50113873A JPS5237780A (en) 1975-09-19 1975-09-19 Integrated composite semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50113873A JPS5237780A (en) 1975-09-19 1975-09-19 Integrated composite semiconductor device

Publications (2)

Publication Number Publication Date
JPS5237780A true JPS5237780A (en) 1977-03-23
JPS5753988B2 JPS5753988B2 (en) 1982-11-16

Family

ID=14623242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50113873A Granted JPS5237780A (en) 1975-09-19 1975-09-19 Integrated composite semiconductor device

Country Status (1)

Country Link
JP (1) JPS5237780A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143416U (en) * 1976-04-27 1977-10-31
EP0113867A2 (en) * 1982-12-20 1984-07-25 General Electric Company Cross-coupled transistor memory cell for MOS random access memory of reduced power dissipation
JPH01271767A (en) * 1989-03-10 1989-10-30 Toshiba Corp Controller for copying machine
US5049970A (en) * 1987-11-17 1991-09-17 Sharp Kabushiki Kaisha High resistive element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114386U (en) * 1983-01-25 1984-08-02 スズキ株式会社 Motorcycle radiator air guide device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110570U (en) * 1973-01-19 1974-09-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110570U (en) * 1973-01-19 1974-09-20

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143416U (en) * 1976-04-27 1977-10-31
EP0113867A2 (en) * 1982-12-20 1984-07-25 General Electric Company Cross-coupled transistor memory cell for MOS random access memory of reduced power dissipation
US5049970A (en) * 1987-11-17 1991-09-17 Sharp Kabushiki Kaisha High resistive element
JPH01271767A (en) * 1989-03-10 1989-10-30 Toshiba Corp Controller for copying machine

Also Published As

Publication number Publication date
JPS5753988B2 (en) 1982-11-16

Similar Documents

Publication Publication Date Title
JPS51145276A (en) Semiconductor device
JPS5237780A (en) Integrated composite semiconductor device
JPS5237779A (en) Integrated composite semiconductor device
JPS52134481A (en) Piezo-electric conversion device
JPS53116767A (en) Emitter follower output circuit
JPS526036A (en) Semiconductor memory circuit
JPS51132071A (en) Auto-variable repetition timing device
JPS5274755A (en) Combining device of nut and washer
JPS51132985A (en) Semiconductor device
AU252346B2 (en) Catamenial tampon
CA592669A (en) Engine heating device
JPS5267581A (en) Semiconductor integrated circuit
JPS5351984A (en) Semiconductor device
JPS51122385A (en) Bipolar semiconductor integrated circuit
JPS52102A (en) Electronic telecontrol device
JPS52153778A (en) Detecting circuit
AU254101B2 (en) Macrofibers, absorbent pads and method and apparatus for making thesame
AU247768B2 (en) Control device for engine starting circuit
AU5851660A (en) Catamenial tampon
JPS5248980A (en) Field effect transistor
AU248014B2 (en) Improvements in or relating to semiconductor devices, in particular photosensitive devices
AU251796B2 (en) 20 - hydroxymethyl derivatives of saturated pregnan - 11 - ones, and their preparation
AU248401B2 (en) Temperature-compensated transistor circuit
AU238677B2 (en) Catamenial devices
AU413329B2 (en) Benzodiazepine and 4,1,5-benoxadiazocine derivatives