JPH0412032B2 - - Google Patents

Info

Publication number
JPH0412032B2
JPH0412032B2 JP56150607A JP15060781A JPH0412032B2 JP H0412032 B2 JPH0412032 B2 JP H0412032B2 JP 56150607 A JP56150607 A JP 56150607A JP 15060781 A JP15060781 A JP 15060781A JP H0412032 B2 JPH0412032 B2 JP H0412032B2
Authority
JP
Japan
Prior art keywords
region
iil
injection
element section
iil element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56150607A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5852870A (ja
Inventor
Isao Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56150607A priority Critical patent/JPS5852870A/ja
Priority to FR8213878A priority patent/FR2513810B1/fr
Priority to IT23345/82A priority patent/IT1153732B/it
Priority to GB08227356A priority patent/GB2106320B/en
Priority to DE19823235412 priority patent/DE3235412A1/de
Publication of JPS5852870A publication Critical patent/JPS5852870A/ja
Priority to HK459/86A priority patent/HK45986A/xx
Priority to MY559/86A priority patent/MY8600559A/xx
Publication of JPH0412032B2 publication Critical patent/JPH0412032B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP56150607A 1981-09-25 1981-09-25 半導体集積回路装置 Granted JPS5852870A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56150607A JPS5852870A (ja) 1981-09-25 1981-09-25 半導体集積回路装置
FR8213878A FR2513810B1 (fr) 1981-09-25 1982-08-09 Dispositif a circuits integres a semiconducteurs et procede de fabrication de ce dispositif
IT23345/82A IT1153732B (it) 1981-09-25 1982-09-20 Dispositivo circuitale integrato a semiconduttore e relativo procedimento di fabbricazione
GB08227356A GB2106320B (en) 1981-09-25 1982-09-24 Semiconductor integrated injection logic circuit device and fabrication method thereof
DE19823235412 DE3235412A1 (de) 1981-09-25 1982-09-24 Integrierte halbleiterschaltungsvorrichtung und verfahren zu ihrer herstellung
HK459/86A HK45986A (en) 1981-09-25 1986-06-19 Semiconductor integrated circuit device and fabrication method thereof
MY559/86A MY8600559A (en) 1981-09-25 1986-12-30 Semiconductor integrated circuit device and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150607A JPS5852870A (ja) 1981-09-25 1981-09-25 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5852870A JPS5852870A (ja) 1983-03-29
JPH0412032B2 true JPH0412032B2 (enrdf_load_stackoverflow) 1992-03-03

Family

ID=15500577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150607A Granted JPS5852870A (ja) 1981-09-25 1981-09-25 半導体集積回路装置

Country Status (7)

Country Link
JP (1) JPS5852870A (enrdf_load_stackoverflow)
DE (1) DE3235412A1 (enrdf_load_stackoverflow)
FR (1) FR2513810B1 (enrdf_load_stackoverflow)
GB (1) GB2106320B (enrdf_load_stackoverflow)
HK (1) HK45986A (enrdf_load_stackoverflow)
IT (1) IT1153732B (enrdf_load_stackoverflow)
MY (1) MY8600559A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616079A (ja) * 1984-06-19 1986-01-11 Fukuyama Gomme Kogyo Kk 弾性体クロ−ラ
JPS6267851A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd 半導体集積回路装置
JPH0715830Y2 (ja) * 1989-01-13 1995-04-12 オーツタイヤ株式会社 クローラ用弾性履帯
JPH0562396U (ja) * 1992-05-18 1993-08-20 福山ゴム工業株式会社 ゴムクローラ
JP2008205418A (ja) * 2007-02-19 2008-09-04 Mikio Shimoyama いつでもスイッチ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50124674A (enrdf_load_stackoverflow) * 1974-02-19 1975-09-30
DE2624584A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
NL7614610A (nl) * 1976-12-31 1978-07-04 Philips Nv Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor.
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
DE2722667C2 (de) * 1977-05-18 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiterschaltung mit Invertern vom I↑2↑ L-Typ
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
DE2837519A1 (de) * 1978-08-28 1980-03-20 Philips Patentverwaltung Monolithische integrierte halbleiter- schaltungsanordnung
JPS55127060A (en) * 1979-03-24 1980-10-01 Mitsubishi Electric Corp Iil integrated circuit
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
JPS5635460A (en) * 1979-08-29 1981-04-08 Nec Corp Logic circuit using integrated injection type logic element

Also Published As

Publication number Publication date
MY8600559A (en) 1986-12-31
JPS5852870A (ja) 1983-03-29
IT8223345A0 (it) 1982-09-20
GB2106320A (en) 1983-04-07
GB2106320B (en) 1985-07-10
DE3235412A1 (de) 1983-05-26
FR2513810A1 (fr) 1983-04-01
IT1153732B (it) 1987-01-14
FR2513810B1 (fr) 1986-06-27
HK45986A (en) 1986-06-27

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