MY8600559A - Semiconductor integrated circuit device and fabrication method thereof - Google Patents
Semiconductor integrated circuit device and fabrication method thereofInfo
- Publication number
- MY8600559A MY8600559A MY559/86A MY8600559A MY8600559A MY 8600559 A MY8600559 A MY 8600559A MY 559/86 A MY559/86 A MY 559/86A MY 8600559 A MY8600559 A MY 8600559A MY 8600559 A MY8600559 A MY 8600559A
- Authority
- MY
- Malaysia
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- fabrication method
- fabrication
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/658—Integrated injection logic integrated in combination with analog structures
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150607A JPS5852870A (ja) | 1981-09-25 | 1981-09-25 | 半導体集積回路装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY8600559A true MY8600559A (en) | 1986-12-31 |
Family
ID=15500577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MY559/86A MY8600559A (en) | 1981-09-25 | 1986-12-30 | Semiconductor integrated circuit device and fabrication method thereof |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5852870A (enrdf_load_stackoverflow) |
| DE (1) | DE3235412A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2513810B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2106320B (enrdf_load_stackoverflow) |
| HK (1) | HK45986A (enrdf_load_stackoverflow) |
| IT (1) | IT1153732B (enrdf_load_stackoverflow) |
| MY (1) | MY8600559A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616079A (ja) * | 1984-06-19 | 1986-01-11 | Fukuyama Gomme Kogyo Kk | 弾性体クロ−ラ |
| JPS6267851A (ja) * | 1985-09-20 | 1987-03-27 | Hitachi Ltd | 半導体集積回路装置 |
| JPH0715830Y2 (ja) * | 1989-01-13 | 1995-04-12 | オーツタイヤ株式会社 | クローラ用弾性履帯 |
| JPH0562396U (ja) * | 1992-05-18 | 1993-08-20 | 福山ゴム工業株式会社 | ゴムクローラ |
| JP2008205418A (ja) * | 2007-02-19 | 2008-09-04 | Mikio Shimoyama | いつでもスイッチ |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50124674A (enrdf_load_stackoverflow) * | 1974-02-19 | 1975-09-30 | ||
| DE2624584A1 (de) * | 1976-06-01 | 1977-12-15 | Siemens Ag | Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen |
| NL7614610A (nl) * | 1976-12-31 | 1978-07-04 | Philips Nv | Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor. |
| NL7700420A (nl) * | 1977-01-17 | 1978-07-19 | Philips Nv | Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan. |
| DE2722667C2 (de) * | 1977-05-18 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Halbleiterschaltung mit Invertern vom I↑2↑ L-Typ |
| FR2404962A1 (fr) * | 1977-09-28 | 1979-04-27 | Ibm France | Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur |
| DE2837519A1 (de) * | 1978-08-28 | 1980-03-20 | Philips Patentverwaltung | Monolithische integrierte halbleiter- schaltungsanordnung |
| JPS55127060A (en) * | 1979-03-24 | 1980-10-01 | Mitsubishi Electric Corp | Iil integrated circuit |
| JPS55134962A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device |
| JPS5635460A (en) * | 1979-08-29 | 1981-04-08 | Nec Corp | Logic circuit using integrated injection type logic element |
-
1981
- 1981-09-25 JP JP56150607A patent/JPS5852870A/ja active Granted
-
1982
- 1982-08-09 FR FR8213878A patent/FR2513810B1/fr not_active Expired
- 1982-09-20 IT IT23345/82A patent/IT1153732B/it active
- 1982-09-24 DE DE19823235412 patent/DE3235412A1/de not_active Withdrawn
- 1982-09-24 GB GB08227356A patent/GB2106320B/en not_active Expired
-
1986
- 1986-06-19 HK HK459/86A patent/HK45986A/xx unknown
- 1986-12-30 MY MY559/86A patent/MY8600559A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5852870A (ja) | 1983-03-29 |
| IT8223345A0 (it) | 1982-09-20 |
| GB2106320A (en) | 1983-04-07 |
| GB2106320B (en) | 1985-07-10 |
| DE3235412A1 (de) | 1983-05-26 |
| FR2513810A1 (fr) | 1983-04-01 |
| IT1153732B (it) | 1987-01-14 |
| JPH0412032B2 (enrdf_load_stackoverflow) | 1992-03-03 |
| FR2513810B1 (fr) | 1986-06-27 |
| HK45986A (en) | 1986-06-27 |
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