JPH0425711B2 - - Google Patents

Info

Publication number
JPH0425711B2
JPH0425711B2 JP58023960A JP2396083A JPH0425711B2 JP H0425711 B2 JPH0425711 B2 JP H0425711B2 JP 58023960 A JP58023960 A JP 58023960A JP 2396083 A JP2396083 A JP 2396083A JP H0425711 B2 JPH0425711 B2 JP H0425711B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
base
transistor
forming
separated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58023960A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59149045A (ja
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58023960A priority Critical patent/JPS59149045A/ja
Publication of JPS59149045A publication Critical patent/JPS59149045A/ja
Publication of JPH0425711B2 publication Critical patent/JPH0425711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58023960A 1983-02-16 1983-02-16 半導体装置の製造方法 Granted JPS59149045A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58023960A JPS59149045A (ja) 1983-02-16 1983-02-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58023960A JPS59149045A (ja) 1983-02-16 1983-02-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59149045A JPS59149045A (ja) 1984-08-25
JPH0425711B2 true JPH0425711B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=12125110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58023960A Granted JPS59149045A (ja) 1983-02-16 1983-02-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59149045A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06820Y2 (ja) * 1986-01-22 1994-01-05 株式会社日立製作所 アクテイブマトリクス基板
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55103740A (en) * 1979-01-31 1980-08-08 Nec Corp Semiconductor device
JPS55125651A (en) * 1979-03-22 1980-09-27 Nec Corp Production of semiconductor integrated circuit
JPS5613020A (en) * 1979-07-13 1981-02-07 Norio Owaki Purifying apparatus of polluted air
JPS56116618A (en) * 1980-02-20 1981-09-12 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS59149045A (ja) 1984-08-25

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