JPH0410225B2 - - Google Patents

Info

Publication number
JPH0410225B2
JPH0410225B2 JP58119079A JP11907983A JPH0410225B2 JP H0410225 B2 JPH0410225 B2 JP H0410225B2 JP 58119079 A JP58119079 A JP 58119079A JP 11907983 A JP11907983 A JP 11907983A JP H0410225 B2 JPH0410225 B2 JP H0410225B2
Authority
JP
Japan
Prior art keywords
resistor
operating voltage
vss
power supply
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58119079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6010767A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58119079A priority Critical patent/JPS6010767A/ja
Publication of JPS6010767A publication Critical patent/JPS6010767A/ja
Publication of JPH0410225B2 publication Critical patent/JPH0410225B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58119079A 1983-06-30 1983-06-30 半導体装置 Granted JPS6010767A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119079A JPS6010767A (ja) 1983-06-30 1983-06-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119079A JPS6010767A (ja) 1983-06-30 1983-06-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS6010767A JPS6010767A (ja) 1985-01-19
JPH0410225B2 true JPH0410225B2 (ko) 1992-02-24

Family

ID=14752353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119079A Granted JPS6010767A (ja) 1983-06-30 1983-06-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS6010767A (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257558A (ja) * 1984-06-04 1985-12-19 Nec Corp 半導体集積回路装置
JPH0724310B2 (ja) * 1987-01-23 1995-03-15 松下電子工業株式会社 半導体装置
EP0276850A3 (en) * 1987-01-28 1990-06-27 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device with latch up preventing structure
JP2806532B2 (ja) * 1988-09-28 1998-09-30 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
JP2953192B2 (ja) * 1991-05-29 1999-09-27 日本電気株式会社 半導体集積回路
KR930005184A (ko) * 1991-08-21 1993-03-23 김광호 정전기 전압 방지용 반도체 장치
JP3184148B2 (ja) 1998-04-15 2001-07-09 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104278A (ko) * 1975-03-12 1976-09-14 Suwa Seikosha Kk
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104278A (ko) * 1975-03-12 1976-09-14 Suwa Seikosha Kk
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device

Also Published As

Publication number Publication date
JPS6010767A (ja) 1985-01-19

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