JPH0532908B2 - - Google Patents
Info
- Publication number
- JPH0532908B2 JPH0532908B2 JP58034157A JP3415783A JPH0532908B2 JP H0532908 B2 JPH0532908 B2 JP H0532908B2 JP 58034157 A JP58034157 A JP 58034157A JP 3415783 A JP3415783 A JP 3415783A JP H0532908 B2 JPH0532908 B2 JP H0532908B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- type
- channel mos
- breakdown voltage
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015556 catabolic process Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58034157A JPS59158546A (ja) | 1983-02-28 | 1983-02-28 | 相補形ｍｏｓ集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58034157A JPS59158546A (ja) | 1983-02-28 | 1983-02-28 | 相補形ｍｏｓ集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59158546A JPS59158546A (ja) | 1984-09-08 |
| JPH0532908B2 true JPH0532908B2 (ko) | 1993-05-18 |
Family
ID=12406364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58034157A Granted JPS59158546A (ja) | 1983-02-28 | 1983-02-28 | 相補形ｍｏｓ集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59158546A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01122153A (ja) * | 1987-11-05 | 1989-05-15 | Fuji Electric Co Ltd | Ｃｍｏｓ半導体回路装置 |
| JP2508826B2 (ja) * | 1987-11-24 | 1996-06-19 | 日本電気株式会社 | 半導体装置 |
| EP0357410B1 (en) * | 1988-09-01 | 1993-11-03 | Fujitsu Limited | Semiconductor integrated circuit device |
| JP2011176163A (ja) * | 2010-02-25 | 2011-09-08 | Panasonic Corp | 不揮発性半導体記憶装置 |
-
1983
- 1983-02-28 JP JP58034157A patent/JPS59158546A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59158546A (ja) | 1984-09-08 |
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