JPH0377670B2 - - Google Patents

Info

Publication number
JPH0377670B2
JPH0377670B2 JP57211568A JP21156882A JPH0377670B2 JP H0377670 B2 JPH0377670 B2 JP H0377670B2 JP 57211568 A JP57211568 A JP 57211568A JP 21156882 A JP21156882 A JP 21156882A JP H0377670 B2 JPH0377670 B2 JP H0377670B2
Authority
JP
Japan
Prior art keywords
insulating film
tft
film
gate insulating
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57211568A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59100572A (ja
Inventor
Yutaka Takato
Kohei Kishi
Fumiaki Funada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57211568A priority Critical patent/JPS59100572A/ja
Publication of JPS59100572A publication Critical patent/JPS59100572A/ja
Publication of JPH0377670B2 publication Critical patent/JPH0377670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
JP57211568A 1982-11-30 1982-11-30 薄膜トランジスタ Granted JPS59100572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57211568A JPS59100572A (ja) 1982-11-30 1982-11-30 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57211568A JPS59100572A (ja) 1982-11-30 1982-11-30 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS59100572A JPS59100572A (ja) 1984-06-09
JPH0377670B2 true JPH0377670B2 (enrdf_load_stackoverflow) 1991-12-11

Family

ID=16607934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57211568A Granted JPS59100572A (ja) 1982-11-30 1982-11-30 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS59100572A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63126277A (ja) * 1986-07-16 1988-05-30 Seikosha Co Ltd 電界効果型薄膜トランジスタ
JPH047876A (ja) * 1990-04-25 1992-01-13 Nec Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
JPS59100572A (ja) 1984-06-09

Similar Documents

Publication Publication Date Title
JPS626672B2 (enrdf_load_stackoverflow)
US6753550B2 (en) Liquid crystal display device having a thin film transistor element including an amorphous film containing a low-defect density layer and a high-defect densisty layer
JPS58147069A (ja) 薄膜トランジスタ
JPH0230186A (ja) 薄膜電界効果トランジスタとその製造方法
JPH0582069B2 (enrdf_load_stackoverflow)
JPH0348671B2 (enrdf_load_stackoverflow)
JPH03217059A (ja) 薄膜トランジスタ
JPH0377670B2 (enrdf_load_stackoverflow)
JPS6146068B2 (enrdf_load_stackoverflow)
CN100355102C (zh) 薄膜二端元件、其制造方法和液晶显示装置
JPS6361671B2 (enrdf_load_stackoverflow)
JPH04240733A (ja) 薄膜トランジスタの製造方法
JPS60177676A (ja) 薄膜トランジスタ素子およびその製造方法
JP3175225B2 (ja) 薄膜トランジスタの製造方法
JPS61145582A (ja) 表示装置
JP3021888B2 (ja) 光導波路機能素子及びその製造方法
JPH0546990B2 (enrdf_load_stackoverflow)
JPS63140580A (ja) 薄膜トランジスタ
JPS5874079A (ja) 薄膜トランジスタ
JPH0691256B2 (ja) 薄膜トランジスタ
JPH0462183B2 (enrdf_load_stackoverflow)
JP3208594B2 (ja) 液晶表示装置
JPS6159779A (ja) 薄膜トランジスタ
KR910008116B1 (ko) 박막 트랜지스터와 그 제조방법
JP3245614B2 (ja) 薄膜素子の製造方法