JPH0546990B2 - - Google Patents

Info

Publication number
JPH0546990B2
JPH0546990B2 JP61143257A JP14325786A JPH0546990B2 JP H0546990 B2 JPH0546990 B2 JP H0546990B2 JP 61143257 A JP61143257 A JP 61143257A JP 14325786 A JP14325786 A JP 14325786A JP H0546990 B2 JPH0546990 B2 JP H0546990B2
Authority
JP
Japan
Prior art keywords
gate electrode
gate
electrode
aluminum oxide
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61143257A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63164A (ja
Inventor
Yutaka Minamino
Yosha Takeda
Noriko Ookawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP61143257A priority Critical patent/JPS63164A/ja
Publication of JPS63164A publication Critical patent/JPS63164A/ja
Publication of JPH0546990B2 publication Critical patent/JPH0546990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP61143257A 1986-06-19 1986-06-19 薄膜トランジスタの製造方法 Granted JPS63164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61143257A JPS63164A (ja) 1986-06-19 1986-06-19 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61143257A JPS63164A (ja) 1986-06-19 1986-06-19 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63164A JPS63164A (ja) 1988-01-05
JPH0546990B2 true JPH0546990B2 (enrdf_load_stackoverflow) 1993-07-15

Family

ID=15334539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61143257A Granted JPS63164A (ja) 1986-06-19 1986-06-19 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63164A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69125886T2 (de) 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP3173854B2 (ja) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
JP3173926B2 (ja) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153427A (en) * 1981-03-17 1982-09-22 Fujitsu Ltd Manufacture of thin film device
JPS5991756U (ja) * 1982-12-13 1984-06-21 三洋電機株式会社 液晶マトリクスパネル
JPS60244071A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd マトリツクスアレイの製造方法

Also Published As

Publication number Publication date
JPS63164A (ja) 1988-01-05

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term