JPH0377160B2 - - Google Patents
Info
- Publication number
- JPH0377160B2 JPH0377160B2 JP14281687A JP14281687A JPH0377160B2 JP H0377160 B2 JPH0377160 B2 JP H0377160B2 JP 14281687 A JP14281687 A JP 14281687A JP 14281687 A JP14281687 A JP 14281687A JP H0377160 B2 JPH0377160 B2 JP H0377160B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafers
- etching
- single crystal
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 43
- 239000013078 crystal Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 239000004809 Teflon Substances 0.000 claims description 8
- 229920006362 Teflon® Polymers 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 21
- 239000006061 abrasive grain Substances 0.000 description 5
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000002223 garnet Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14281687A JPS63307200A (ja) | 1987-06-08 | 1987-06-08 | 単結晶ウエ−ハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14281687A JPS63307200A (ja) | 1987-06-08 | 1987-06-08 | 単結晶ウエ−ハの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63307200A JPS63307200A (ja) | 1988-12-14 |
| JPH0377160B2 true JPH0377160B2 (enrdf_load_stackoverflow) | 1991-12-09 |
Family
ID=15324294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14281687A Granted JPS63307200A (ja) | 1987-06-08 | 1987-06-08 | 単結晶ウエ−ハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63307200A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0719737B2 (ja) * | 1990-02-28 | 1995-03-06 | 信越半導体株式会社 | Ｓ０１基板の製造方法 |
| JP2017190279A (ja) * | 2016-04-15 | 2017-10-19 | 住友金属鉱山株式会社 | 非磁性ガーネット基板の製造方法 |
-
1987
- 1987-06-08 JP JP14281687A patent/JPS63307200A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63307200A (ja) | 1988-12-14 |
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