JPH0358187B2 - - Google Patents
Info
- Publication number
- JPH0358187B2 JPH0358187B2 JP57102928A JP10292882A JPH0358187B2 JP H0358187 B2 JPH0358187 B2 JP H0358187B2 JP 57102928 A JP57102928 A JP 57102928A JP 10292882 A JP10292882 A JP 10292882A JP H0358187 B2 JPH0358187 B2 JP H0358187B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- collector
- source
- doped
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8111835A FR2507820A1 (fr) | 1981-06-16 | 1981-06-16 | Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57211773A JPS57211773A (en) | 1982-12-25 |
JPH0358187B2 true JPH0358187B2 (US06534493-20030318-C00166.png) | 1991-09-04 |
Family
ID=9259576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57102928A Granted JPS57211773A (en) | 1981-06-16 | 1982-06-15 | Semiconductor structure |
Country Status (5)
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132672A (ja) * | 1983-01-19 | 1984-07-30 | Nissan Motor Co Ltd | Mosトランジスタ |
JP2644989B2 (ja) * | 1984-05-09 | 1997-08-25 | 株式会社東芝 | 導電変調型mosfet |
JPH0614550B2 (ja) * | 1984-05-26 | 1994-02-23 | 株式会社東芝 | 半導体装置 |
JPS60254658A (ja) * | 1984-05-30 | 1985-12-16 | Toshiba Corp | 導電変調型mosfet |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
JPH0783112B2 (ja) * | 1985-01-17 | 1995-09-06 | 株式会社東芝 | 導電変調型mosfet |
US4639754A (en) * | 1985-02-25 | 1987-01-27 | Rca Corporation | Vertical MOSFET with diminished bipolar effects |
JPH0612827B2 (ja) * | 1985-02-28 | 1994-02-16 | 株式会社東芝 | 導電変調型mosfet |
US4809045A (en) * | 1985-09-30 | 1989-02-28 | General Electric Company | Insulated gate device |
US4779123A (en) * | 1985-12-13 | 1988-10-18 | Siliconix Incorporated | Insulated gate transistor array |
JP2700025B2 (ja) * | 1985-12-24 | 1998-01-19 | 富士電機株式会社 | バイポーラたて形mosfet |
GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
JPS6380572A (ja) * | 1986-09-24 | 1988-04-11 | Fuji Electric Co Ltd | 伝導度変調型たて型mos−fet |
US5338693A (en) * | 1987-01-08 | 1994-08-16 | International Rectifier Corporation | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
JP2700026B2 (ja) * | 1987-05-12 | 1998-01-19 | 富士電機株式会社 | 絶縁ゲートバイポーラ導通形トランジスタ |
JP2786196B2 (ja) * | 1987-07-21 | 1998-08-13 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
DE3856173D1 (de) * | 1987-10-21 | 1998-06-10 | Siemens Ag | Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode |
DE58909474D1 (de) * | 1988-02-24 | 1995-11-30 | Siemens Ag | Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors. |
JPH02278880A (ja) * | 1989-04-20 | 1990-11-15 | Nippondenso Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
US5381025A (en) * | 1989-08-17 | 1995-01-10 | Ixys Corporation | Insulated gate thyristor with gate turn on and turn off |
WO1991003078A1 (en) * | 1989-08-17 | 1991-03-07 | Ixys Corporation | Insulated gate thyristor with gate turn on and turn off |
US5194394A (en) * | 1989-10-23 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Thyristor and method of manufacturing the same |
JPH0795596B2 (ja) * | 1989-10-23 | 1995-10-11 | 三菱電機株式会社 | サイリスタ及びその製造方法 |
JP2536302B2 (ja) * | 1990-04-30 | 1996-09-18 | 日本電装株式会社 | 絶縁ゲ―ト型バイポ―ラトランジスタ |
US5359220A (en) * | 1992-12-22 | 1994-10-25 | Hughes Aircraft Company | Hybrid bipolar/field-effect power transistor in group III-V material system |
US5592006A (en) * | 1994-05-13 | 1997-01-07 | International Rectifier Corporation | Gate resistor for IGBT |
US5654562A (en) * | 1995-03-03 | 1997-08-05 | Motorola, Inc. | Latch resistant insulated gate semiconductor device |
JP3384198B2 (ja) * | 1995-07-21 | 2003-03-10 | 三菱電機株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
US5831318A (en) * | 1996-07-25 | 1998-11-03 | International Rectifier Corporation | Radhard mosfet with thick gate oxide and deep channel region |
DE19750413A1 (de) * | 1997-11-14 | 1999-05-20 | Asea Brown Boveri | Bipolartransistor mit isolierter Steuerelektrode (IGBT) |
US6492663B1 (en) | 1999-05-20 | 2002-12-10 | Richard A. Blanchard | Universal source geometry for MOS-gated power devices |
US7599228B1 (en) * | 2004-11-01 | 2009-10-06 | Spansion L.L.C. | Flash memory device having increased over-erase correction efficiency and robustness against device variations |
JP5119589B2 (ja) * | 2005-11-04 | 2013-01-16 | 富士電機株式会社 | 半導体装置 |
DE112015004766B4 (de) * | 2014-10-20 | 2021-11-18 | Mitsubishi Electric Corporation | Halbleitervorrichtungen |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032961A (en) * | 1974-10-16 | 1977-06-28 | General Electric Company | Gate modulated bipolar transistor |
FR2364528A1 (fr) * | 1976-09-10 | 1978-04-07 | Thomson Csf | Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules |
JPS5939904B2 (ja) * | 1978-09-28 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
US4367509A (en) * | 1979-05-02 | 1983-01-04 | Rca Corporation | Anti-latch circuit for power output devices using inductive loads |
US4407005A (en) * | 1980-01-21 | 1983-09-27 | Texas Instruments Incorporated | N-Channel JFET device having a buried channel region, and method for making same |
-
1981
- 1981-06-16 FR FR8111835A patent/FR2507820A1/fr active Granted
-
1982
- 1982-06-08 EP EP82401036A patent/EP0068945B1/fr not_active Expired
- 1982-06-08 DE DE8282401036T patent/DE3262032D1/de not_active Expired
- 1982-06-14 US US06/388,500 patent/US4495513A/en not_active Expired - Lifetime
- 1982-06-15 JP JP57102928A patent/JPS57211773A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57211773A (en) | 1982-12-25 |
FR2507820A1 (fr) | 1982-12-17 |
FR2507820B1 (US06534493-20030318-C00166.png) | 1983-12-02 |
EP0068945A1 (fr) | 1983-01-05 |
DE3262032D1 (en) | 1985-03-07 |
US4495513A (en) | 1985-01-22 |
EP0068945B1 (fr) | 1985-01-23 |
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