FR2364528A1 - Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules - Google Patents

Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules

Info

Publication number
FR2364528A1
FR2364528A1 FR7627291A FR7627291A FR2364528A1 FR 2364528 A1 FR2364528 A1 FR 2364528A1 FR 7627291 A FR7627291 A FR 7627291A FR 7627291 A FR7627291 A FR 7627291A FR 2364528 A1 FR2364528 A1 FR 2364528A1
Authority
FR
France
Prior art keywords
cells
memory
transistor
memory cell
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7627291A
Other languages
English (en)
Other versions
FR2364528B1 (fr
Inventor
Eugene Tonnel
Maurice Depey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7627291A priority Critical patent/FR2364528A1/fr
Priority to US05/831,049 priority patent/US4143421A/en
Priority to NL7709822A priority patent/NL7709822A/xx
Priority to JP52108713A priority patent/JPS6026302B2/ja
Priority to DE2740786A priority patent/DE2740786C2/de
Publication of FR2364528A1 publication Critical patent/FR2364528A1/fr
Application granted granted Critical
Publication of FR2364528B1 publication Critical patent/FR2364528B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/155—Nonresinous additive to promote interlayer adhesion in element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Bipolar Transistors (AREA)

Abstract

La présente invention se rapporte au domaine des cellules de mémoire Suivant l'invention, on met en oeuvre, pour constituer une telle cellule, un transistor bipolaire de type tétrode, comportant un émetteur E, une base B, un collecteur C et une grille G, isolée par une couche de diélectrique, où un écran isolé est disposé entre la grille et la base. Le fonctionnement en cellule de mémoire fait appel à des moyens d'application temporaire de grandeurs électriques, d'une part entre les connexions 92A et 93A, plaçant la jonction B, E en régime d'avalanche, d'autre part entre les connexions 91 de grille et 93 A; le signe positif ou négatif choisi pour ces dernières grandeurs represente l'un ou l'autre des signaux logiques d'écriture, et modifie le gain du transistor, qui constitue le signal de lecture de l'information mémorisée, gain mesurable en 93 A. Les applications sont notamment du domaine des circuits de mémoires ré-inscriptibles et non volatiles.
FR7627291A 1976-09-10 1976-09-10 Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules Granted FR2364528A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7627291A FR2364528A1 (fr) 1976-09-10 1976-09-10 Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules
US05/831,049 US4143421A (en) 1976-09-10 1977-09-06 Tetrode transistor memory logic cell
NL7709822A NL7709822A (nl) 1976-09-10 1977-09-07 Geheugencel.
JP52108713A JPS6026302B2 (ja) 1976-09-10 1977-09-09 四極トランジスタ記憶論理素子
DE2740786A DE2740786C2 (de) 1976-09-10 1977-09-09 Bipolarer Tetroden-Transistor und seine Verwendung als EPROM-Element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7627291A FR2364528A1 (fr) 1976-09-10 1976-09-10 Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules

Publications (2)

Publication Number Publication Date
FR2364528A1 true FR2364528A1 (fr) 1978-04-07
FR2364528B1 FR2364528B1 (fr) 1981-12-11

Family

ID=9177578

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7627291A Granted FR2364528A1 (fr) 1976-09-10 1976-09-10 Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules

Country Status (5)

Country Link
US (1) US4143421A (fr)
JP (1) JPS6026302B2 (fr)
DE (1) DE2740786C2 (fr)
FR (1) FR2364528A1 (fr)
NL (1) NL7709822A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567463A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture
EP0057336A3 (fr) * 1981-01-29 1982-08-18 American Microsystems, Incorporated Transistor bipolaire avec plaque de base
FR2507820A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee
JPS59213167A (ja) * 1983-05-19 1984-12-03 Nec Corp サイリスタ
US7304327B1 (en) * 2003-11-12 2007-12-04 T-Ram Semiconductor, Inc. Thyristor circuit and approach for temperature stability
US7961032B1 (en) * 2009-11-30 2011-06-14 International Business Machines Corporation Method of and structure for recovering gain in a bipolar transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149177B1 (fr) * 1970-02-27 1976-12-24
FR2288372A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Element de memoires a semi-conducteurs et memoires formees de matrices de tels elements
US3918033A (en) * 1974-11-11 1975-11-04 Ibm SCR memory cell

Also Published As

Publication number Publication date
DE2740786A1 (de) 1978-07-27
FR2364528B1 (fr) 1981-12-11
US4143421A (en) 1979-03-06
DE2740786C2 (de) 1984-10-11
NL7709822A (nl) 1978-03-14
JPS5335337A (en) 1978-04-01
JPS6026302B2 (ja) 1985-06-22

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