DE3262032D1 - Bipolar transistor controlled by field effect having an insulated gate electrode - Google Patents
Bipolar transistor controlled by field effect having an insulated gate electrodeInfo
- Publication number
- DE3262032D1 DE3262032D1 DE8282401036T DE3262032T DE3262032D1 DE 3262032 D1 DE3262032 D1 DE 3262032D1 DE 8282401036 T DE8282401036 T DE 8282401036T DE 3262032 T DE3262032 T DE 3262032T DE 3262032 D1 DE3262032 D1 DE 3262032D1
- Authority
- DE
- Germany
- Prior art keywords
- gate electrode
- field effect
- bipolar transistor
- insulated gate
- transistor controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8111835A FR2507820A1 (fr) | 1981-06-16 | 1981-06-16 | Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3262032D1 true DE3262032D1 (en) | 1985-03-07 |
Family
ID=9259576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282401036T Expired DE3262032D1 (en) | 1981-06-16 | 1982-06-08 | Bipolar transistor controlled by field effect having an insulated gate electrode |
Country Status (5)
Country | Link |
---|---|
US (1) | US4495513A (de) |
EP (1) | EP0068945B1 (de) |
JP (1) | JPS57211773A (de) |
DE (1) | DE3262032D1 (de) |
FR (1) | FR2507820A1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132672A (ja) * | 1983-01-19 | 1984-07-30 | Nissan Motor Co Ltd | Mosトランジスタ |
JP2644989B2 (ja) * | 1984-05-09 | 1997-08-25 | 株式会社東芝 | 導電変調型mosfet |
JPH0614550B2 (ja) * | 1984-05-26 | 1994-02-23 | 株式会社東芝 | 半導体装置 |
JPS60254658A (ja) * | 1984-05-30 | 1985-12-16 | Toshiba Corp | 導電変調型mosfet |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
JPH0783112B2 (ja) * | 1985-01-17 | 1995-09-06 | 株式会社東芝 | 導電変調型mosfet |
US4639754A (en) * | 1985-02-25 | 1987-01-27 | Rca Corporation | Vertical MOSFET with diminished bipolar effects |
JPH0612827B2 (ja) * | 1985-02-28 | 1994-02-16 | 株式会社東芝 | 導電変調型mosfet |
US4809045A (en) * | 1985-09-30 | 1989-02-28 | General Electric Company | Insulated gate device |
US4779123A (en) * | 1985-12-13 | 1988-10-18 | Siliconix Incorporated | Insulated gate transistor array |
JP2700025B2 (ja) * | 1985-12-24 | 1998-01-19 | 富士電機株式会社 | バイポーラたて形mosfet |
GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
JPS6380572A (ja) * | 1986-09-24 | 1988-04-11 | Fuji Electric Co Ltd | 伝導度変調型たて型mos−fet |
US5338693A (en) * | 1987-01-08 | 1994-08-16 | International Rectifier Corporation | Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET |
JP2700026B2 (ja) * | 1987-05-12 | 1998-01-19 | 富士電機株式会社 | 絶縁ゲートバイポーラ導通形トランジスタ |
JP2786196B2 (ja) * | 1987-07-21 | 1998-08-13 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
EP0313000B1 (de) * | 1987-10-21 | 1998-05-06 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode |
EP0330122B1 (de) * | 1988-02-24 | 1995-10-25 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors |
JPH02278880A (ja) * | 1989-04-20 | 1990-11-15 | Nippondenso Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
US5381025A (en) * | 1989-08-17 | 1995-01-10 | Ixys Corporation | Insulated gate thyristor with gate turn on and turn off |
WO1991003078A1 (en) * | 1989-08-17 | 1991-03-07 | Ixys Corporation | Insulated gate thyristor with gate turn on and turn off |
JPH0795596B2 (ja) * | 1989-10-23 | 1995-10-11 | 三菱電機株式会社 | サイリスタ及びその製造方法 |
US5194394A (en) * | 1989-10-23 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Thyristor and method of manufacturing the same |
JP2536302B2 (ja) * | 1990-04-30 | 1996-09-18 | 日本電装株式会社 | 絶縁ゲ―ト型バイポ―ラトランジスタ |
US5359220A (en) * | 1992-12-22 | 1994-10-25 | Hughes Aircraft Company | Hybrid bipolar/field-effect power transistor in group III-V material system |
US5592006A (en) * | 1994-05-13 | 1997-01-07 | International Rectifier Corporation | Gate resistor for IGBT |
US5654562A (en) * | 1995-03-03 | 1997-08-05 | Motorola, Inc. | Latch resistant insulated gate semiconductor device |
JP3384198B2 (ja) * | 1995-07-21 | 2003-03-10 | 三菱電機株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
US5831318A (en) * | 1996-07-25 | 1998-11-03 | International Rectifier Corporation | Radhard mosfet with thick gate oxide and deep channel region |
DE19750413A1 (de) * | 1997-11-14 | 1999-05-20 | Asea Brown Boveri | Bipolartransistor mit isolierter Steuerelektrode (IGBT) |
US6492663B1 (en) | 1999-05-20 | 2002-12-10 | Richard A. Blanchard | Universal source geometry for MOS-gated power devices |
US7599228B1 (en) * | 2004-11-01 | 2009-10-06 | Spansion L.L.C. | Flash memory device having increased over-erase correction efficiency and robustness against device variations |
JP5119589B2 (ja) * | 2005-11-04 | 2013-01-16 | 富士電機株式会社 | 半導体装置 |
WO2016063644A1 (ja) * | 2014-10-20 | 2016-04-28 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032961A (en) * | 1974-10-16 | 1977-06-28 | General Electric Company | Gate modulated bipolar transistor |
FR2364528A1 (fr) * | 1976-09-10 | 1978-04-07 | Thomson Csf | Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules |
JPS5939904B2 (ja) * | 1978-09-28 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
US4367509A (en) * | 1979-05-02 | 1983-01-04 | Rca Corporation | Anti-latch circuit for power output devices using inductive loads |
US4407005A (en) * | 1980-01-21 | 1983-09-27 | Texas Instruments Incorporated | N-Channel JFET device having a buried channel region, and method for making same |
-
1981
- 1981-06-16 FR FR8111835A patent/FR2507820A1/fr active Granted
-
1982
- 1982-06-08 DE DE8282401036T patent/DE3262032D1/de not_active Expired
- 1982-06-08 EP EP82401036A patent/EP0068945B1/de not_active Expired
- 1982-06-14 US US06/388,500 patent/US4495513A/en not_active Expired - Lifetime
- 1982-06-15 JP JP57102928A patent/JPS57211773A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2507820B1 (de) | 1983-12-02 |
JPS57211773A (en) | 1982-12-25 |
EP0068945B1 (de) | 1985-01-23 |
US4495513A (en) | 1985-01-22 |
FR2507820A1 (fr) | 1982-12-17 |
EP0068945A1 (de) | 1983-01-05 |
JPH0358187B2 (de) | 1991-09-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: SGS-THOMSON MICROELECTRONICS S.A., GENTILLY, FR |
|
8328 | Change in the person/name/address of the agent |
Free format text: KLUNKER UND KOLLEGEN, 80797 MUENCHEN |