NL189273C - Transistor met geisoleerde stuurelektrode. - Google Patents
Transistor met geisoleerde stuurelektrode.Info
- Publication number
- NL189273C NL189273C NLAANVRAGE8104305,A NL8104305A NL189273C NL 189273 C NL189273 C NL 189273C NL 8104305 A NL8104305 A NL 8104305A NL 189273 C NL189273 C NL 189273C
- Authority
- NL
- Netherlands
- Prior art keywords
- transistor
- steering electrode
- insulated
- insulated steering
- electrode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55129067A JPS5754370A (en) | 1980-09-19 | 1980-09-19 | Insulating gate type transistor |
| JP12906780 | 1980-09-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL8104305A NL8104305A (nl) | 1982-04-16 |
| NL189273C true NL189273C (nl) | 1993-02-16 |
Family
ID=15000259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE8104305,A NL189273C (nl) | 1980-09-19 | 1981-09-18 | Transistor met geisoleerde stuurelektrode. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4458261A (nl) |
| JP (1) | JPS5754370A (nl) |
| KR (1) | KR890000587B1 (nl) |
| CA (1) | CA1158365A (nl) |
| DE (1) | DE3136682A1 (nl) |
| FR (1) | FR2490874A1 (nl) |
| GB (1) | GB2086652B (nl) |
| IT (1) | IT1139449B (nl) |
| NL (1) | NL189273C (nl) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2527385B1 (fr) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor |
| US4675713A (en) * | 1982-05-10 | 1987-06-23 | Motorola, Inc. | MOS transistor |
| JPS6080279A (ja) * | 1983-10-08 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁ゲ−ト形トランジスタ |
| US4764799A (en) * | 1985-05-28 | 1988-08-16 | International Business Machines Corporation | Stud-defined integrated circuit structure |
| US4882295A (en) * | 1985-07-26 | 1989-11-21 | Energy Conversion Devices, Inc. | Method of making a double injection field effect transistor |
| US5168337A (en) * | 1988-02-19 | 1992-12-01 | Nippondenso Co., Ltd. | Polycrystalline diode and a method for making the same |
| US5248623A (en) * | 1988-02-19 | 1993-09-28 | Nippondenso Co., Ltd. | Method for making a polycrystalline diode having high breakdown |
| US4843448A (en) * | 1988-04-18 | 1989-06-27 | The United States Of America As Represented By The Secretary Of The Navy | Thin-film integrated injection logic |
| JP2743376B2 (ja) * | 1988-04-28 | 1998-04-22 | セイコーエプソン株式会社 | 薄膜集積回路の製造方法 |
| JPH0425175A (ja) * | 1990-05-21 | 1992-01-28 | Canon Inc | ダイオード |
| US5128731A (en) * | 1990-06-13 | 1992-07-07 | Integrated Device Technology, Inc. | Static random access memory cell using a P/N-MOS transistors |
| JP3190057B2 (ja) * | 1990-07-02 | 2001-07-16 | 株式会社東芝 | 複合集積回路装置 |
| EP0488677A3 (en) * | 1990-11-29 | 1992-08-26 | Kawasaki Steel Corporation | Semiconductor device of band-to-band tunneling type |
| JP2773474B2 (ja) * | 1991-08-06 | 1998-07-09 | 日本電気株式会社 | 半導体装置 |
| US5410160A (en) * | 1992-06-08 | 1995-04-25 | Motorola, Inc. | Interband tunneling field effect transistor |
| GB0000510D0 (en) * | 2000-01-11 | 2000-03-01 | Koninkl Philips Electronics Nv | A charge pump circuit |
| US6998656B2 (en) * | 2003-02-07 | 2006-02-14 | Hewlett-Packard Development Company, L.P. | Transparent double-injection field-effect transistor |
| US6874645B2 (en) * | 2002-02-15 | 2005-04-05 | David Lee Broderick | Media disc storage and display device |
| AU2003258948A1 (en) * | 2002-06-19 | 2004-01-06 | The Board Of Trustees Of The Leland Stanford Junior University | Insulated-gate semiconductor device and approach involving junction-induced intermediate region |
| US7151338B2 (en) * | 2003-10-02 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Inorganic electroluminescent device with controlled hole and electron injection |
| DE102004010673A1 (de) * | 2004-03-04 | 2005-11-24 | Walter Dr. Hansch | Komplementärer Tunnel- Feldeffekttransistor (CTFET) |
| US7180107B2 (en) * | 2004-05-25 | 2007-02-20 | International Business Machines Corporation | Method of fabricating a tunneling nanotube field effect transistor |
| WO2009019866A1 (ja) * | 2007-08-07 | 2009-02-12 | Kaori Takakubo | 半導体装置及びその駆動方法 |
| JP2011034992A (ja) * | 2009-07-29 | 2011-02-17 | Toshiba Corp | 半導体装置 |
| US8723223B2 (en) * | 2011-11-30 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid Fin field-effect transistors |
| WO2020017071A1 (ja) | 2018-07-18 | 2020-01-23 | 株式会社アスカネット | 立体像結像装置の製造方法及び立体像結像装置 |
| WO2021205662A1 (ja) * | 2020-04-10 | 2021-10-14 | 株式会社オプトハブ | 半導体イメージセンサ |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3339086A (en) * | 1964-06-11 | 1967-08-29 | Itt | Surface controlled avalanche transistor |
| US3444442A (en) * | 1966-04-27 | 1969-05-13 | Nippon Electric Co | Avalanche transistor having reduced width in depletion region adjacent gate surface |
| US3675092A (en) * | 1970-07-13 | 1972-07-04 | Signetics Corp | Surface controlled avalanche semiconductor device |
| US4053916A (en) * | 1975-09-04 | 1977-10-11 | Westinghouse Electric Corporation | Silicon on sapphire MOS transistor |
| US4050965A (en) * | 1975-10-21 | 1977-09-27 | The United States Of America As Represented By The Secretary Of The Air Force | Simultaneous fabrication of CMOS transistors and bipolar devices |
| JPS542679A (en) * | 1977-06-08 | 1979-01-10 | Mitsubishi Electric Corp | Nonvoltile semiconductor memory device |
| JPS5819142B2 (ja) * | 1977-09-02 | 1983-04-16 | 富士通株式会社 | 半導体記憶装置 |
| JPS5721856B2 (en) * | 1977-11-28 | 1982-05-10 | Nippon Telegraph & Telephone | Semiconductor and its manufacture |
-
1980
- 1980-09-19 JP JP55129067A patent/JPS5754370A/ja active Granted
-
1981
- 1981-09-11 GB GB8127467A patent/GB2086652B/en not_active Expired
- 1981-09-11 KR KR1019810003387A patent/KR890000587B1/ko not_active IP Right Cessation
- 1981-09-15 FR FR8117369A patent/FR2490874A1/fr active Granted
- 1981-09-16 CA CA000385982A patent/CA1158365A/en not_active Expired
- 1981-09-16 DE DE19813136682 patent/DE3136682A1/de active Granted
- 1981-09-18 NL NLAANVRAGE8104305,A patent/NL189273C/nl not_active IP Right Cessation
- 1981-09-18 IT IT24041/81A patent/IT1139449B/it active
- 1981-09-21 US US06/304,281 patent/US4458261A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS623989B2 (nl) | 1987-01-28 |
| IT1139449B (it) | 1986-09-24 |
| CA1158365A (en) | 1983-12-06 |
| FR2490874A1 (fr) | 1982-03-26 |
| IT8124041A0 (it) | 1981-09-18 |
| FR2490874B1 (nl) | 1983-10-21 |
| JPS5754370A (en) | 1982-03-31 |
| DE3136682A1 (de) | 1982-06-03 |
| GB2086652B (en) | 1984-09-26 |
| DE3136682C2 (nl) | 1990-01-04 |
| NL8104305A (nl) | 1982-04-16 |
| KR830008401A (ko) | 1983-11-18 |
| GB2086652A (en) | 1982-05-12 |
| US4458261A (en) | 1984-07-03 |
| KR890000587B1 (ko) | 1989-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
|
| BC | A request for examination has been filed | ||
| V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20010918 |