JPH0352232B2 - - Google Patents
Info
- Publication number
- JPH0352232B2 JPH0352232B2 JP56052280A JP5228081A JPH0352232B2 JP H0352232 B2 JPH0352232 B2 JP H0352232B2 JP 56052280 A JP56052280 A JP 56052280A JP 5228081 A JP5228081 A JP 5228081A JP H0352232 B2 JPH0352232 B2 JP H0352232B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- floating electrode
- capacitance
- well
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000003990 capacitor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 21
- 238000009413 insulation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5228081A JPS57166080A (en) | 1981-04-07 | 1981-04-07 | Semiconductor variable capacity element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5228081A JPS57166080A (en) | 1981-04-07 | 1981-04-07 | Semiconductor variable capacity element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57166080A JPS57166080A (en) | 1982-10-13 |
| JPH0352232B2 true JPH0352232B2 (ko) | 1991-08-09 |
Family
ID=12910376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5228081A Granted JPS57166080A (en) | 1981-04-07 | 1981-04-07 | Semiconductor variable capacity element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57166080A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59105378A (ja) * | 1982-12-09 | 1984-06-18 | Seiko Instr & Electronics Ltd | 半導体可変容量素子 |
| JPS60147169A (ja) * | 1984-01-10 | 1985-08-03 | Seiko Instr & Electronics Ltd | 半導体可変容量素子 |
| JPS62179162A (ja) * | 1986-01-31 | 1987-08-06 | Seiko Instr & Electronics Ltd | 半導体可変容量素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115185A (en) * | 1977-03-17 | 1978-10-07 | Sanyo Electric Co Ltd | Memory type variable capacitive device |
| JPS53135235A (en) * | 1977-04-30 | 1978-11-25 | Toshiba Corp | Nonvolatile memory array |
-
1981
- 1981-04-07 JP JP5228081A patent/JPS57166080A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115185A (en) * | 1977-03-17 | 1978-10-07 | Sanyo Electric Co Ltd | Memory type variable capacitive device |
| JPS53135235A (en) * | 1977-04-30 | 1978-11-25 | Toshiba Corp | Nonvolatile memory array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57166080A (en) | 1982-10-13 |
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