JPH0213465B2 - - Google Patents

Info

Publication number
JPH0213465B2
JPH0213465B2 JP55154861A JP15486180A JPH0213465B2 JP H0213465 B2 JPH0213465 B2 JP H0213465B2 JP 55154861 A JP55154861 A JP 55154861A JP 15486180 A JP15486180 A JP 15486180A JP H0213465 B2 JPH0213465 B2 JP H0213465B2
Authority
JP
Japan
Prior art keywords
electrode
capacitance
semiconductor substrate
floating electrode
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55154861A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5778181A (en
Inventor
Yoshio Hatsutori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP15486180A priority Critical patent/JPS5778181A/ja
Publication of JPS5778181A publication Critical patent/JPS5778181A/ja
Publication of JPH0213465B2 publication Critical patent/JPH0213465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP15486180A 1980-11-04 1980-11-04 Semiconductor variable capacity element Granted JPS5778181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15486180A JPS5778181A (en) 1980-11-04 1980-11-04 Semiconductor variable capacity element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15486180A JPS5778181A (en) 1980-11-04 1980-11-04 Semiconductor variable capacity element

Publications (2)

Publication Number Publication Date
JPS5778181A JPS5778181A (en) 1982-05-15
JPH0213465B2 true JPH0213465B2 (ko) 1990-04-04

Family

ID=15593511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15486180A Granted JPS5778181A (en) 1980-11-04 1980-11-04 Semiconductor variable capacity element

Country Status (1)

Country Link
JP (1) JPS5778181A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125987A (ja) * 1987-11-11 1989-05-18 Seiko Instr & Electron Ltd 半導体可変容量素子
US5248891A (en) * 1988-03-25 1993-09-28 Hiroshi Takato High integration semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device
JPS53135235A (en) * 1977-04-30 1978-11-25 Toshiba Corp Nonvolatile memory array

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device
JPS53135235A (en) * 1977-04-30 1978-11-25 Toshiba Corp Nonvolatile memory array

Also Published As

Publication number Publication date
JPS5778181A (en) 1982-05-15

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