JPS57166080A - Semiconductor variable capacity element - Google Patents

Semiconductor variable capacity element

Info

Publication number
JPS57166080A
JPS57166080A JP5228081A JP5228081A JPS57166080A JP S57166080 A JPS57166080 A JP S57166080A JP 5228081 A JP5228081 A JP 5228081A JP 5228081 A JP5228081 A JP 5228081A JP S57166080 A JPS57166080 A JP S57166080A
Authority
JP
Japan
Prior art keywords
electrode
capacity
type
insulating film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5228081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0352232B2 (ko
Inventor
Yoshio Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP5228081A priority Critical patent/JPS57166080A/ja
Publication of JPS57166080A publication Critical patent/JPS57166080A/ja
Publication of JPH0352232B2 publication Critical patent/JPH0352232B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP5228081A 1981-04-07 1981-04-07 Semiconductor variable capacity element Granted JPS57166080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5228081A JPS57166080A (en) 1981-04-07 1981-04-07 Semiconductor variable capacity element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5228081A JPS57166080A (en) 1981-04-07 1981-04-07 Semiconductor variable capacity element

Publications (2)

Publication Number Publication Date
JPS57166080A true JPS57166080A (en) 1982-10-13
JPH0352232B2 JPH0352232B2 (ko) 1991-08-09

Family

ID=12910376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5228081A Granted JPS57166080A (en) 1981-04-07 1981-04-07 Semiconductor variable capacity element

Country Status (1)

Country Link
JP (1) JPS57166080A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105378A (ja) * 1982-12-09 1984-06-18 Seiko Instr & Electronics Ltd 半導体可変容量素子
JPS60147169A (ja) * 1984-01-10 1985-08-03 Seiko Instr & Electronics Ltd 半導体可変容量素子
EP0232117A2 (en) * 1986-01-31 1987-08-12 Seiko Instruments Inc. Semiconductor variable capacitance element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device
JPS53135235A (en) * 1977-04-30 1978-11-25 Toshiba Corp Nonvolatile memory array

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device
JPS53135235A (en) * 1977-04-30 1978-11-25 Toshiba Corp Nonvolatile memory array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105378A (ja) * 1982-12-09 1984-06-18 Seiko Instr & Electronics Ltd 半導体可変容量素子
JPS60147169A (ja) * 1984-01-10 1985-08-03 Seiko Instr & Electronics Ltd 半導体可変容量素子
JPS6361790B2 (ko) * 1984-01-10 1988-11-30
EP0232117A2 (en) * 1986-01-31 1987-08-12 Seiko Instruments Inc. Semiconductor variable capacitance element

Also Published As

Publication number Publication date
JPH0352232B2 (ko) 1991-08-09

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