JPS55103768A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55103768A
JPS55103768A JP1205179A JP1205179A JPS55103768A JP S55103768 A JPS55103768 A JP S55103768A JP 1205179 A JP1205179 A JP 1205179A JP 1205179 A JP1205179 A JP 1205179A JP S55103768 A JPS55103768 A JP S55103768A
Authority
JP
Japan
Prior art keywords
impurity regions
substrate
conduction type
impurity
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1205179A
Other languages
Japanese (ja)
Other versions
JPS6159544B2 (en
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP1205179A priority Critical patent/JPS55103768A/en
Publication of JPS55103768A publication Critical patent/JPS55103768A/en
Publication of JPS6159544B2 publication Critical patent/JPS6159544B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a semiconductor device capable of operating high-precision level comparison, by means of a simple structure, by a method wherein impurity regions having different impurity concentrations are laminated in a substrate, and impurity regions of the opposite conduction type are formed on the terminating edge of their boundary surface of contact.
CONSTITUTION: In a semiconductor substrate, a plurality of impurity regions 4, 5, 7 and 8 of the same conduction type as that of the substrate, whose impurity concentrations are successively either increased or decrease are formed. Next, a plurality of impurity regions 11∼21 of the conduction type opposite to that of the substrate are formed in the neighborhood of one main surface of the substrate on the terminating end of the boundary surface of contact of impurity regions 4, 5, 7 and 8. Next, on one main surface of the substrate between impurity regions 11∼21, common gate electrode 22 is selectively formed via insulating film 23, and thereby impurity regions 11 and 21, 12 and 20, 13 and 19, 14 and 18, and 15 and 17 are electrically connected.
COPYRIGHT: (C)1980,JPO&Japio
JP1205179A 1979-02-05 1979-02-05 Semiconductor device Granted JPS55103768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1205179A JPS55103768A (en) 1979-02-05 1979-02-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1205179A JPS55103768A (en) 1979-02-05 1979-02-05 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2962579A Division JPS55104122A (en) 1979-03-14 1979-03-14 Signal level discriminator

Publications (2)

Publication Number Publication Date
JPS55103768A true JPS55103768A (en) 1980-08-08
JPS6159544B2 JPS6159544B2 (en) 1986-12-17

Family

ID=11794790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1205179A Granted JPS55103768A (en) 1979-02-05 1979-02-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55103768A (en)

Also Published As

Publication number Publication date
JPS6159544B2 (en) 1986-12-17

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