JPS55103768A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55103768A JPS55103768A JP1205179A JP1205179A JPS55103768A JP S55103768 A JPS55103768 A JP S55103768A JP 1205179 A JP1205179 A JP 1205179A JP 1205179 A JP1205179 A JP 1205179A JP S55103768 A JPS55103768 A JP S55103768A
- Authority
- JP
- Japan
- Prior art keywords
- impurity regions
- substrate
- conduction type
- impurity
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Manipulation Of Pulses (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a semiconductor device capable of operating high-precision level comparison, by means of a simple structure, by a method wherein impurity regions having different impurity concentrations are laminated in a substrate, and impurity regions of the opposite conduction type are formed on the terminating edge of their boundary surface of contact.
CONSTITUTION: In a semiconductor substrate, a plurality of impurity regions 4, 5, 7 and 8 of the same conduction type as that of the substrate, whose impurity concentrations are successively either increased or decrease are formed. Next, a plurality of impurity regions 11∼21 of the conduction type opposite to that of the substrate are formed in the neighborhood of one main surface of the substrate on the terminating end of the boundary surface of contact of impurity regions 4, 5, 7 and 8. Next, on one main surface of the substrate between impurity regions 11∼21, common gate electrode 22 is selectively formed via insulating film 23, and thereby impurity regions 11 and 21, 12 and 20, 13 and 19, 14 and 18, and 15 and 17 are electrically connected.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1205179A JPS55103768A (en) | 1979-02-05 | 1979-02-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1205179A JPS55103768A (en) | 1979-02-05 | 1979-02-05 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2962579A Division JPS55104122A (en) | 1979-03-14 | 1979-03-14 | Signal level discriminator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55103768A true JPS55103768A (en) | 1980-08-08 |
JPS6159544B2 JPS6159544B2 (en) | 1986-12-17 |
Family
ID=11794790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1205179A Granted JPS55103768A (en) | 1979-02-05 | 1979-02-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103768A (en) |
-
1979
- 1979-02-05 JP JP1205179A patent/JPS55103768A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6159544B2 (en) | 1986-12-17 |
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