JPH033932B2 - - Google Patents

Info

Publication number
JPH033932B2
JPH033932B2 JP58164717A JP16471783A JPH033932B2 JP H033932 B2 JPH033932 B2 JP H033932B2 JP 58164717 A JP58164717 A JP 58164717A JP 16471783 A JP16471783 A JP 16471783A JP H033932 B2 JPH033932 B2 JP H033932B2
Authority
JP
Japan
Prior art keywords
layer
width
silicide layer
conductive metal
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58164717A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6055671A (ja
Inventor
Kenichi Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58164717A priority Critical patent/JPS6055671A/ja
Publication of JPS6055671A publication Critical patent/JPS6055671A/ja
Publication of JPH033932B2 publication Critical patent/JPH033932B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58164717A 1983-09-06 1983-09-06 半導体装置及びその製造方法 Granted JPS6055671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58164717A JPS6055671A (ja) 1983-09-06 1983-09-06 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58164717A JPS6055671A (ja) 1983-09-06 1983-09-06 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6055671A JPS6055671A (ja) 1985-03-30
JPH033932B2 true JPH033932B2 (en, 2012) 1991-01-21

Family

ID=15798546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58164717A Granted JPS6055671A (ja) 1983-09-06 1983-09-06 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6055671A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169483A (ja) * 1986-01-22 1987-07-25 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタの構造及び製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188978A (ja) * 1983-04-11 1984-10-26 Hitachi Ltd シヨツトキゲ−ト型ｆｅｔの製造方法
JPS59222965A (ja) * 1983-06-02 1984-12-14 Nec Corp シヨツトキ−障壁ゲ−ト型電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6055671A (ja) 1985-03-30

Similar Documents

Publication Publication Date Title
US4711858A (en) Method of fabricating a self-aligned metal-semiconductor FET having an insulator spacer
KR920002090B1 (ko) 전계효과 트랜지스터의 제조방법
EP0064829B1 (en) High electron mobility semiconductor device and process for producing the same
JPH0212019B2 (en, 2012)
US4586063A (en) Schottky barrier gate FET including tungsten-aluminum alloy
US6455361B1 (en) Semiconductor device and manufacturing method of the same
JPS59181676A (ja) 半導体装置
JPH033932B2 (en, 2012)
GB2074374A (en) Method of making field effect transistors
JPH0213929B2 (en, 2012)
JP2731194B2 (ja) 化合物半導体装置の製造方法
JPH0257340B2 (en, 2012)
JPH0622247B2 (ja) 電界効果型半導体装置
JPH0353774B2 (en, 2012)
JPS6260268A (ja) 電界効果トランジスタの製造方法
JPH0219622B2 (en, 2012)
JPH028454B2 (en, 2012)
JPH0758717B2 (ja) 電界効果トランジスタの製造方法
JPH03283627A (ja) 電界効果型半導体装置の製造方法
JPS6158274A (ja) 半導体装置の製造方法
JPH0439773B2 (en, 2012)
JPH06275654A (ja) 電界効果トランジスタおよび製造方法
JPS62156878A (ja) 半導体装置
JPS62243371A (ja) 半導体装置の製造方法
JPS6196771A (ja) 半導体装置の製造方法