JPH0213929B2 - - Google Patents

Info

Publication number
JPH0213929B2
JPH0213929B2 JP58222083A JP22208383A JPH0213929B2 JP H0213929 B2 JPH0213929 B2 JP H0213929B2 JP 58222083 A JP58222083 A JP 58222083A JP 22208383 A JP22208383 A JP 22208383A JP H0213929 B2 JPH0213929 B2 JP H0213929B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
insulating film
mask
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58222083A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60115268A (ja
Inventor
Naoki Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58222083A priority Critical patent/JPS60115268A/ja
Publication of JPS60115268A publication Critical patent/JPS60115268A/ja
Publication of JPH0213929B2 publication Critical patent/JPH0213929B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58222083A 1983-11-28 1983-11-28 半導体装置の製造方法 Granted JPS60115268A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58222083A JPS60115268A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58222083A JPS60115268A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60115268A JPS60115268A (ja) 1985-06-21
JPH0213929B2 true JPH0213929B2 (en, 2012) 1990-04-05

Family

ID=16776856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58222083A Granted JPS60115268A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60115268A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810703B2 (ja) * 1986-05-06 1996-01-31 株式会社日立製作所 電界効果トランジスタの製造方法
JPS647570A (en) * 1987-01-12 1989-01-11 Int Standard Electric Corp Manufacture of self-aligning field effect transistor
JPH01198079A (ja) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012985A (en, 2012) * 1973-06-01 1975-02-10
JPS57152168A (en) * 1981-03-13 1982-09-20 Nec Corp Manufacture of schottky barrier gate field effect transistor
JPS57196581A (en) * 1981-05-27 1982-12-02 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS60115268A (ja) 1985-06-21

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