JPH0335734B2 - - Google Patents

Info

Publication number
JPH0335734B2
JPH0335734B2 JP57220999A JP22099982A JPH0335734B2 JP H0335734 B2 JPH0335734 B2 JP H0335734B2 JP 57220999 A JP57220999 A JP 57220999A JP 22099982 A JP22099982 A JP 22099982A JP H0335734 B2 JPH0335734 B2 JP H0335734B2
Authority
JP
Japan
Prior art keywords
film
rare earth
transition metal
metal alloy
alloy thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57220999A
Other languages
English (en)
Other versions
JPS59110052A (ja
Inventor
Kenji Oota
Akira Takahashi
Junji Hirokane
Hiroyuki Katayama
Hideyoshi Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57220999A priority Critical patent/JPS59110052A/ja
Priority to DE3382791T priority patent/DE3382791T2/de
Priority to DE8888104160T priority patent/DE3382672T2/de
Priority to EP83302419A priority patent/EP0111988B2/en
Priority to EP88104161A priority patent/EP0314859B1/en
Priority to DE8383302419T priority patent/DE3380539D1/de
Priority to DE8888104159T priority patent/DE3382671T2/de
Priority to EP88104160A priority patent/EP0319636B1/en
Priority to EP92110340A priority patent/EP0509555B1/en
Priority to DE88104161T priority patent/DE3382702T2/de
Priority to EP88104159A priority patent/EP0316508B1/en
Priority to CA000427088A priority patent/CA1209698A/en
Publication of JPS59110052A publication Critical patent/JPS59110052A/ja
Publication of JPH0335734B2 publication Critical patent/JPH0335734B2/ja
Priority to US08/443,760 priority patent/US5738765A/en
Priority to US08/450,219 priority patent/US5714251A/en
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10584—Record carriers characterised by the selection of the material or by the structure or form characterised by the form, e.g. comprising mechanical protection elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳細な説明】 ＜技術分野＞ 本発明はレーザ等の光により情報の記録・再
生・消去等を行う光メモリ素子に関する。
＜従来技術＞ 近年、光メモリ素子は高密度・大容量なメモリ
となる為、多方面で種々の研究開発が行われてい
る。
特に使用者が情報の追加記録をなし得るメモ
リ、あるいは使用者が情報の追加記録及び消去を
なし得るメモリは幅広い応用分野があり種々の材
料やシステムが発表されている。
前者の材料としてはTeOx、TeSe、TeC等が
あり、後者の材料としてはGdTbFe、
GdTbDyFe、TbFe等がある。
しかし、これら情報の追加記録できるメモリ、
あるいは情報の追加記録及び消去ができるメモリ
の基本となる記憶材料の大半は酸化等の耐食性に
欠ける為、その対策としてメモリ素子の構造には
色々な工夫がなされている。
次に従来の光メモリ素子の構造を説明する。
第２図は２枚の基板１，２の間にスペーサ３に
よつて空間４を設け、その中に不活性ガスを充填
し、上記２枚の基板１，２の内面に記録層５を設
けたサンドイツチ構造の光メモリ素子（特公昭57
−32413号公報）である。この構造の光メモリ素
子は記録層を密封することによつて酸化を防止し
ている。
又、第３図は基板６上において記録層７を酸化
に対して安定な透明膜８で挟み、更にその上に酸
化し易い膜９を被覆した光メモリ素子（特願昭57
−149806参照）である。この構造の光メモリ素子
は酸化し易い膜で酸素を吸収することによつて酸
素が記録層に到達しないように配慮しているもの
である。
しかし、以上の従来の光メモリ素子は記録層を
挟む透明膜の少なくとも一方に酸素を含有する膜
を使用していたため、ある程度は酸化に対して安
定とはいえ、その酸素を含有する膜からの影響が
僅かながらでも存在し、その結果、特に記録層が
希土類遷移金属合金薄膜で形成される場合、この
材料は非常に酸化され易い材料である為に、記録
層の酸化という状況が発生して、記録再生特性が
劣化した。
＜目的＞ 本発明者は希土類遷移金属合金薄膜を記録媒体
とする光メモリ素子において、その劣化の原因が
記録層を挟む透明膜の材料に起因することを初め
て究明し、記録媒体の劣化の決定的な解決策を見
いだしたものであり、光メモリ素子の記録媒体に
混入する酸素を回避しつつ、しかも記録再生に効
果的に機能することのできる、新規な構造の光メ
モリ素子を提供することを目的とするものであ
る。
＜実施例＞ 以下、本発明に係る光メモリ素子の実施例につ
いて図面を用いて詳細に説明する。
第１図は本発明に係る光メモリ素子の実施例の
構成説明図である。
１０はガラス，ポリカーボネート，アクリル等
の透明基板であり、該透明基板１０上に第１の透
明誘電体膜である透明なAlの窒化膜（窒化アル
ミニウム）１１が形成され、該Alの窒化膜１１
上に希土類遷移金属合金薄膜（例えばGdTbFe，
TbDyFe，GdTbDyFe，TbFe，GdFeCo，GdCo
若しくはそれらの中にSn，Zn，Si，Bi，Ｂ等を
添加含有させた膜）１２が形成され、該希土類遷
移金属合金薄膜１２上に第２の透明誘電体膜であ
る透明なAlの窒化膜１７が形成され、該Alの窒
化膜１３の上にCu，Ag，Al，Au等の反射膜１
４が形成される。
この構造の磁気光学記憶素子についてオージエ
分析したところ第４図のような結果を得ることが
できた。同図に示す結果はAlの窒化膜と
GdTbFe膜とAlの窒化膜との３層膜におけるAl，
Fe，Ｏについてのオージエ電子強度を示してい
る。同図に示される如くGdTbFe膜中には酸素は
入つておらず、表面とAlの酸化膜との界面及び
Alの窒化膜と透明基板との界面に僅かに酸化が
見られる。これは膜形成後、外部からAlの窒化
膜に侵入した酸素とガラス基板からAlの窒化膜
に侵入した酸素が存在することを示している。
この実験結果から判断されるように、希土類遷
移金属合金薄膜１２をAlの窒化膜にて挟持する
構造とすれば膜形成時における上記希土類遷移金
属合金薄膜１２の酸化を防止し得るものである。
この理由はSiO2膜とは異なり、Alの窒化膜は酸
素を含有しない為、例えばAlターゲツトを用い
て窒素雰囲気中で反応性スパツタリングして膜形
成すれば、その膜形成時において希土類遷移金属
合金薄膜に酸素が侵入する虞れがないのである。
この点に鑑みれば希土類遷移金属合金薄膜を窒化
膜以外の他の酸素を含有しない透明誘電体膜（例
えばMgF2，ZnS，CeF3，AlF3，3NaF）で挟持
する構造としても構わない。しかし、上記他の透
明誘電体膜は誘電体膜用ターゲツトが多く多孔質
でありその孔中にとり込まれた酸素が水分がスパ
ツタリング中に放出されて希土類遷移金属合金薄
膜を酸化する場合があるので真に酸素を含まない
希土類遷移金属合金薄膜を作成することが比較的
難しいのである。それに比してAlの窒化膜であ
ればターゲツトがAlのみである為ターゲツトの
節約にもなり、更にAlターゲツトが多孔質でな
い為にその孔中に酸素や水分をとり込む虞れがな
いのである。
又、窒化膜の一種である、Siターゲツトを用い
て窒化雰囲気中で反応性スパツタリングして膜形
成するSi3N4（窒化シリコン）を、透明誘電体膜
とすることも考えられるが、上記ターゲツト用の
物質をアルミニウムとし、透明誘電体膜として窒
化アルミニウムを形成するようにした方が、アル
ミニウムは金属であり、シリコンのような物質と
比べ導電性の高いので反応性スパツタリングのス
ピードを大きく高めることができる。スパツタリ
ングによる成膜法は蒸着による成膜法に比べて成
膜速度が遅いことが大きな欠点であり、その為に
生産性が悪かつたが、上記のようにスパツタリン
グのターゲツトとしてアルミニウムを用いること
でそれが大きく改善できるのである。
加えて、窒化アルミニウムと窒化シリコンとで
は、窒化アルミニウムを希土類遷移金属合金薄膜
を挟む膜として用いた方が出来上がつた光メモリ
素子の構造自体が遥かに優れている。
何故ならば、窒化アルミニウムは透明な誘電体
でありながら、熱伝導率は0.48cal／cm・sec・℃
であつて、窒化シリコンの熱伝導率である
0.03cal／cm×sec・℃と比べると非常に大きい。
その為、同程度の保護効果を期待して、窒化アル
ミニウムと窒化シリコンを同じ膜厚にした場合で
も、窒化アルミニウムの方がある程度の熱の伝導
を図ることができる。このことは非常に重要なポ
イントであり、窒化アルミニウムにおいては熱の
伝導がある程度図れるために、光の入射の際に記
録媒体の熱が極端に上昇することを抑えることが
できるのである。
再生時に光を入射した時、記録媒体の熱が必要
以上に上昇すると記録媒体の保磁力が低下するの
で、最悪の場合僅かの外部磁場の影響や記録媒体
自体から発生する磁場によつて情報が消滅し、あ
るいはそこまでは行かなくとも記録媒体の温度上
昇はカ−回転角の低下（従つてＳ／Ｎの低下）に
直接つながるので、熱伝導を図ることでそれを防
止できる効果は高い。以上の点から、窒化アルミ
ニウムによつて希土類遷移金属合金薄膜を挟む構
成は再生特性にとり非常に有利である。
又、この構成を採ると、窒化アルミニウムの１
成分であるアルミニウムが希土類遷移金属合金薄
膜に混入する可能性があるが、アルミニウムは不
動態を形成する元素であつて、その性質の影響に
よると思われる、希土類遷移金属合金薄膜の孔触
を防ぐ性質が認められ、窒化アルミニウムの１成
分であるアルミニウムが希土類遷移金属合金薄膜
に僅かでも混入すればかえつて希土類遷移金属合
金薄膜の腐食を低減でき、これにより光メモリ素
子の使用中における信頼性（経年変化特性）を高
めることができるという付随的な効果を発生する
のである。つまり、窒化アルミニウムで希土類遷
移金属合金薄膜を挟む構成を採ると、希土類遷移
金属合金薄膜の酸化を非常に効果的に防止し、し
かもその成分であるアルミニウムが希土類遷移金
属合金薄膜に混入しても希土類遷移金属合金薄膜
の安定性を高めこそすれ、低下させることがな
い。つまり窒化アルミニウムは、実際の光メモリ
素子の生産にとつては極めて安心して用いること
のできる透明誘電体膜である。
ここで上記光メモリ素子の透明誘電体膜の膜厚
は少なくとも100Åあることが好ましい。その理
由は例えばガラス基板中の酸素が上記透明誘電体
膜中に混入する深さが50Å程度である為、上記透
明誘電体膜の膜厚が100Å以下の場合は上記透明
誘電体膜上に希土類遷移金属合金薄膜をスパツタ
リングする際に希土類遷移金属合金薄膜に酸素が
入つてくる場合が考えられるからである。
上記第１図の構造の光メモリ素子の反射膜１３
の上にTi，Mg，希土類金属（Gd，Tb，Dy，
Ho，Ｙ等），希土類遷移金属合金（GdTbFe，
TbDyFe，GdCo，GdTbDyFe等）等の酸化容易
性金属からなる膜を被覆すれば外部からの酸素の
混入も防ぐことができる完壁な素子構造となる。
＜効果＞ 以上の本発明によれば、光メモリ素子形成後に
おいて希土類遷移金属合金薄膜が酸化されること
を防止できることは勿論であり、加えて透明誘電
体薄膜として窒化アルミニウムで希土類遷移金属
合金薄膜を挟む構成であるので、透明誘電体薄膜
形成時に希土類遷移金属合金薄膜が酸素に接する
ことを防止でき、よつて酸素が希土類遷移金属合
金薄膜に混入することを防止でき、その為光メモ
リ素子の信頼性が大きく向上することを可能にす
るものである。
又、アルミニウムは希土類遷移金属合金薄膜の
孔蝕を防ぐ性質があり、窒化アルミニウムの１成
分であるアルミニウムが希土類遷移金属合金薄膜
に僅かでも混入すればかえつて腐食を低減でき、
これにより光メモリ素子の使用中における信頼性
（経年変化特性）を高める可能性があるという利
点を有するものである。
更に、再生時に光を入射した時、記録媒体の熱
が必要以上に上昇しないので、記録媒体の保磁力
が低下することを防止でき、僅かの外部磁場の影
響や記録媒体自体から発生する磁場によつて情報
を消滅することを未然に防止し、記録媒体の保磁
力の低下によるカー回転角の低下（従つてＳ／Ｎ
の低下）を防止することができる。
【図面の簡単な説明】
第１図は本発明に係る光メモリ素子の実施例の
構成説明図、第２図及び第３図は従来の光メモリ
素子の構成説明図、第４図は本発明に係る光メモ
リ素子のオージエ電子分光分析の結果を示すグラ
フ図である。 図中、１，２：基板、３：スペーサ、４：空
間、５：記録層、６：基板、７：記録層、８：透
明膜、９：酸化しやすい膜、１０：透明基板、１
１：第１の透明誘電体膜、１２：希土類遷移金属
合金薄膜、１３：第２の透明誘電体膜、１４：反
射膜。

Claims (1)

  1. 【特許請求の範囲】 １ 酸素を含有しない窒化アルミニウムからなる
    第１の透明誘電体膜と、 希土類遷移金属合金薄膜からなる記録媒体と、
    酸素を含有しない窒化アルミニウムからなる第２
    の透明誘電体膜とを、 この順に備えたことを特徴とする光メモリ素
    子。
JP57220999A 1982-12-15 1982-12-15 光メモリ素子 Granted JPS59110052A (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP57220999A JPS59110052A (ja) 1982-12-15 1982-12-15 光メモリ素子
DE3382791T DE3382791T2 (de) 1982-12-15 1983-04-20 Magneto-optischer Speicher.
EP88104160A EP0319636B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
DE88104161T DE3382702T2 (de) 1982-12-15 1983-04-28 Magneto-optischer Speicher.
EP88104161A EP0314859B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
DE8383302419T DE3380539D1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
DE8888104159T DE3382671T2 (de) 1982-12-15 1983-04-28 Magneto-optischer speicher.
DE8888104160T DE3382672T2 (de) 1982-12-15 1983-04-28 Magneto-optischer speicher.
EP92110340A EP0509555B1 (en) 1982-12-15 1983-04-28 A method of making a magneto-optic memory device
EP83302419A EP0111988B2 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
EP88104159A EP0316508B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
CA000427088A CA1209698A (en) 1982-12-15 1983-04-29 Magneto-optic memory device
US08/443,760 US5738765A (en) 1982-12-15 1995-05-18 Magneto-optic memory device
US08/450,219 US5714251A (en) 1982-12-15 1995-05-25 Magneto-optic memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57220999A JPS59110052A (ja) 1982-12-15 1982-12-15 光メモリ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28317990A Division JPH03156755A (ja) 1990-10-19 1990-10-19 光メモリ素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59110052A JPS59110052A (ja) 1984-06-25
JPH0335734B2 true JPH0335734B2 (ja) 1991-05-29

Family

ID=16759878

Family Applications (1)

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JP57220999A Granted JPS59110052A (ja) 1982-12-15 1982-12-15 光メモリ素子

Country Status (1)

Country Link
JP (1) JPS59110052A (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85104504A (zh) * 1984-11-01 1986-04-10 能源转换装置公司 光学数据存贮器件的形成方法
JPS61144744A (ja) * 1984-12-17 1986-07-02 Kyocera Corp 光磁気記録素子及びその製法
JPH0721883B2 (ja) * 1985-01-24 1995-03-08 セイコーエプソン株式会社 光記録媒体
JPS61258353A (ja) * 1985-05-10 1986-11-15 Ricoh Co Ltd 光磁気記録媒体
JPH0731831B2 (ja) * 1985-06-03 1995-04-10 キヤノン株式会社 光磁気記録媒体
JP2577344B2 (ja) * 1985-06-28 1997-01-29 株式会社東芝 光磁気デイスク及びその製造方法
JPS62139156A (ja) * 1985-12-11 1987-06-22 Sharp Corp 光記録デバイスの製造方法
JPS62217444A (ja) * 1986-03-17 1987-09-24 Fujitsu Ltd 光磁気デイスク
JPH01173453A (ja) * 1987-12-28 1989-07-10 Mitsubishi Kasei Corp 光磁気記録媒体
JPH01173455A (ja) * 1987-12-28 1989-07-10 Mitsubishi Kasei Corp 光磁気記録媒体
JP2507751B2 (ja) * 1987-07-01 1996-06-19 シャープ株式会社 光メモリ素子
JP2506867B2 (ja) * 1987-12-17 1996-06-12 松下電器産業株式会社 光ディスク
JP2506868B2 (ja) * 1987-12-17 1996-06-12 松下電器産業株式会社 光ディスク
JPH01160075A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 半導体レーザ
JP2797359B2 (ja) * 1989-01-09 1998-09-17 東レ株式会社 光記録媒体
EP0541376B1 (en) * 1991-11-07 1998-06-03 Toray Industries, Inc. Optical recording medium
JP2955112B2 (ja) * 1992-03-13 1999-10-04 シャープ株式会社 光磁気記憶媒体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956241A (ja) * 1982-09-27 1984-03-31 Canon Inc 光磁気記録媒体

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