JPH05258361A - 光磁気記憶媒体及びその製造方法 - Google Patents

光磁気記憶媒体及びその製造方法

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Publication number
JPH05258361A
JPH05258361A JP4054622A JP5462292A JPH05258361A JP H05258361 A JPH05258361 A JP H05258361A JP 4054622 A JP4054622 A JP 4054622A JP 5462292 A JP5462292 A JP 5462292A JP H05258361 A JPH05258361 A JP H05258361A
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Japan
Prior art keywords
dielectric layer
magneto
film
layer
optical recording
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JP4054622A
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JP2955112B2 (ja
Inventor
Naoyasu Iketani
直泰 池谷
Hiroyuki Katayama
博之 片山
Junichiro Nakayama
純一郎 中山
Kenji Ota
賢司 太田
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Sharp Corp
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Sharp Corp
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Priority to JP4054622A priority Critical patent/JP2955112B2/ja
Priority to CA002091490A priority patent/CA2091490C/en
Priority to EP93301891A priority patent/EP0560625B1/en
Priority to DE69320511T priority patent/DE69320511T2/de
Publication of JPH05258361A publication Critical patent/JPH05258361A/ja
Priority to US08/358,682 priority patent/US5643687A/en
Application granted granted Critical
Publication of JP2955112B2 publication Critical patent/JP2955112B2/ja
Anticipated expiration legal-status Critical
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Abstract

(57)【要約】 【構成】 記録磁性層の光ビームが入射する側に屈折率
の異なる２種類の誘電体層を設け、基板側の第一誘電体
層に例えば2.54という大きな屈折率を示すＴｉＯ2膜、
光磁気記録層との間の第二誘電体層に酸素を含まないＴ
ｉＮ膜を用いた構成をしている光磁気記憶媒体。また、
上記２種類の誘電体層の製造に関しては、同一ターゲッ
トを用いてスパッタガスの切り換えによって連続的に製
造する。 【効果】 第一誘電体層にｎ＝2.54という大きな屈折率
を示すＴｉＯ2膜を用いるので、見かけのカー回転角が
従来より約32〜66％大きくなり、光磁気記録層の吸収を
最大14％増加でき再生信号レベルも最大約1.4dB程高く
なる。またＴｉＮ膜は酸素を含まず、第一誘電体層の成
分酸素と光磁気記録層との成膜時のミキシンングや外部
からの酸素の侵入を防ぐことができるので耐食性も確立
され高い信頼性が得られる。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明はレーザー光により情報の
記録、再生及び消去を行う光磁気記憶媒体及びその製造
方法に関する。
【０００２】
【従来の技術】現在、光磁気効果を利用した書き換え可
能な光磁気ディスクとして、希土類遷移金属膜の研究が
活発に行われ、実用化段階にある。しかし、希土類遷移
金属膜の場合、耐食性が良くないことからくる信頼性の
問題、カー回転角が小さいために再生信号レベルが低い
といった問題があった。再生信号レベルを高くするため
には、カー回転角を大きくする必要があり、光磁気記憶
媒体の構造を、光磁気記録層と誘電体層からなる反射防
止構造（例えば、IEEE Trans.Magn.MAG-16,p1194(1980)
参照）にしたり、光磁気記憶層、誘電体層とさらに反射
層を設ける反射膜構造によって、見かけのカー回転角を
向上させている。また、耐食性の点から光磁気記録層を
保護層で狭持し信頼性を向上する方法がとられている。
【０００３】
【発明が解決しようとする課題】このように、ディスク
開発の重要な課題として、カー回転角を大きくすること
が挙げられ、そのためには誘電体層の屈折率を大きくし
てエンハンス効果を増大する必要がある。しかしなが
ら、従来用いられてきた誘電体層としては、ＡｌＮ、Ａ
ｌＳｉＮ、ＳｉＮといった窒化物系やＡｌ2Ｏ3、ＳｉＯ
といった酸化物系があったが、いずれの屈折率も約1.5
〜2.0前後であり、カー回転角増大効果としてはいまだ
不十分である。一方ＴｉＯ2、ＢａＴｉＯ3のような酸化
物系では約2.4〜2.6といった高屈折率を有するものの、
成膜時の遊離酸素の悪影響もあって光磁気記録層の保護
という点から問題があり利用されなかった。
【０００４】本発明は、誘電体層に成膜時の遊離酸素の
影響を避けながら高屈折率の酸化物材料を用いる方法を
提供するものである。
【０００５】
【課題を解決するための手段】本発明は、誘電体層、光
磁気記録層、保護層、または誘電体層、光磁気記録層、
保護層、反射層からなる光磁気記憶媒体において、屈折
率が2.4以上3.5以下の酸化物からなる第一誘電体層と、
該第一誘電体層と光磁気記録層との間に酸素を含まない
第二誘電体層を設けたことを特徴とする光磁気記憶媒体
である。ここで前記第一誘電体層は屈折率が2.4〜3.5と
大きく、光吸収がほとんどない例えばＢａＴｉＯ3、Ｓ
ｒＴｉＯ3、ＴｉＯ2、Ｆｅ2Ｏ3膜からなり、第二誘電体
層は酸素を含まない例えばＴｉＮ、ＳｉＮ、ＡｌＳｉ
Ｎ、ＢＮ、ＺｎＳ、ＭｇＦ2、ＬｉＦ膜から成ってお
り、該第二誘電体層は光吸収を無視できる程度に薄くし
た膜である。
【０００６】本発明は、同一元素を含んだ物質を、少な
くとも２層以上に含む多層膜の製造方法において、前記
同一元素をターゲットとして、導入するスパッタガスの
種類を切り替えることによって各層を連続的に製造する
ことを特徴とする多層膜の製造方法である。例えばＴｉ
Ｏ2／ＴｉＮからなる二層膜の製造においては、ＴｉＯ2
膜を成膜するときには、ターゲットにＴｉを用いてＯ2
含有ガス雰囲気中で反応性スパッタリング法にて形成
し、ＴｉＮ膜は同じＴｉターゲットを用いてＮ2含有ガ
ス雰囲気中で反応性スパッタリング法にて導入ガスの交
換だけで連続的に形成することが可能である。本発明の
方法は、ＴｉとＴｉＯ2、ＴｉとＴｉＮ、ＳｉＯ2とＳｉ
Ｎ、Ａｌ2Ｏ3とＡｌＮ等を含む多層膜においても同様に
行える。
【０００７】
【作用】本発明によれば、第一誘電体層に従来の窒化物
系及び酸化物系より大きな屈折率を示す例えばＴｉＯ2
膜を用いることによりカー回転角を大きくすることがで
き、第二誘電体層に酸素を含んでいない例えばＴｉＮ膜
を用いることにより耐食性のための機能を付与すること
ができる。また、同一ターゲットを用いることのできる
物質を２層以上に含んだ多層膜の製造、たとえばＴｉＯ
2／ＴｉＮからなる誘電体二層膜の製造においては、Ｔ
ｉターゲットを用いてＯ2含有ガスを用いることによっ
て、ＴｉＯ2膜を反応性スパッタリング法で作製し、そ
の後、前記Ｔｉターゲットはそのまま用い、導入ガスを
Ｎ2含有ガスに変更して、ＴｉＮ膜を反応性スパッタリ
ング法で作製することができる。
【０００８】
【実施例】
［実施例１］図１に本発明に係る光磁気記憶媒体の構成
図を示す。ここで、１は透光性基板、２は第一誘電体
層、３は第二誘電体層、４は光磁気記録層、５は保護層
を示す。上記の光磁気記憶媒体の製造方法に際しては、
例えば、ポリカーボネイト樹脂、アクリル樹脂、非晶質
ポリオレフィン等の合成樹脂またはガラス基板からなる
透光性基板１上に、第一誘電体層ＴｉＯ2膜２、第二誘
電体層ＴｉＮ膜３を形成する。続いて、ＴｂＦｅＣｏ、
ＤｙＴｅＣｏ、ＧｄＴｂＦｅ、Ｐｔ／Ｃｏ多層膜等から
なる光磁気記録層４と例えばＡｌＮ、ＡｌＳｉＮ膜等か
らなる保護層５を形成する。第一誘電体層ＴｉＯ2膜２
と第二誘電体層ＴｉＮ膜３の製造については、まず第一
誘電体層ＴｉＯ2膜２はＴｉターゲットを用いて（Ａｒ
＋Ｏ2）ガス雰囲気中、スパッタパワー0.3〜0.6kw、ス
パッタ圧2.5〜3.0mTorr、Ｏ2分圧0.8〜1.0mTorrの条件
下、反応性スパッタリング法で形成することによって、
屈折率ｎ＝2.54を示す透明膜が得られる。また、第二誘
電体層ＴｉＮ膜３は同一Ｔｉターゲットを用いて、Ｎ2
ガス雰囲気中で反応性スパッタリング法にて形成する。
膜厚としては、反射防止構造によるカー回転角増大効果
を効率的にするために第一誘電体層は50.0〜60.0nmの範
囲内、第二誘電体層は第一誘電体層の遊離酸素の影響を
抑えるとともに、該層での吸収ロスを極力抑えるために
1.0〜6.0nmに設定されることが望ましい。このようにし
て形成された光磁気記憶媒体は、反射防止構造にｎ＝2.
54という大きな屈折率を示すＴｉＯ2膜を用いるので、
従来誘電体層に屈折率ｎ＝2.05を示すＡｌＮを用いてい
た場合より見かけのカー回転角が従来より約32〜66％大
きくなり、光磁気記録層の吸収も最大約14％増加でき再
生信号レベルも最大約1.4dB程高くなる。ＴｉＯ2膜とＴ
ｉＮ膜は同一ターゲットを用いるため製造工程は複雑に
ならず、導入ガスを（Ａｒ＋Ｏ2）ガスからＮ2ガスへ例
えば徐々に切り換えていくことによって組成をある程度
連続的に変化させることが可能で、この場合、両層内の
内部応力を緩和できる。さらにＴｉＮ膜は酸素を含ま
ず、また第一誘電体層の成分酸素と光磁気記録層との成
膜時のミキシングや外部からの酸素の侵入を防ぐことが
できるので耐食性も確立され高い信頼性が得られる。
【０００９】［実施例２］図２に本発明に係る他の光磁
気記憶媒体の構成図を示す。ここで、１は透光性基板、
２は第一誘電体層、３は第二誘電体層、４は光磁気記録
層、７は例えば屈折率が第一誘電体層と比べて相対的に
小さな ＬｉＦ、ＭｇＦ2膜などからなる第三誘電体層、
６は反射層を示す。上記の光磁気記憶媒体の製造に際し
ては、実施例１と同様に１〜４及び７を形成した後、例
えばＡｌ、Ｔａ、ＳＵＳ、Ｔｉ、Ａｕ、Ｃｕ、Ａｇ等か
らなる反射層６を形成する。第一誘電体層ＴｉＯ2膜２
と第二誘電体層ＴｉＮ膜３の製造については、実施例１
と同様に形成すればよい。膜厚としてはカー回転角増大
効果を効率的にするために第一誘電体層は45.0〜55.0nm
の範囲内、第二誘電体層は第一誘電体層の遊離酸素の影
響を抑えるとともに、該層での吸収ロスを極力抑えるた
めに1.0〜5.0nmに設定されることが望ましく、誘電体層
に屈折率ｎ=2.05を示すＡｌＮを用いていた従来の場合
より見かけのカー回転角が約40〜50％大きくなり、光磁
気記録層の吸収も最大約10％増加でき再生信号レベルも
最大約1.0dB程高くなる。本実施例では、上述の反射防
止によるカー効果増大とともに、光磁気記録層透過時の
ファラデー効果もさらに重畳されるため見かけのカー回
転角がさらに大きく再生信号レベルも高くなり、耐食性
もすぐれた高い信頼性の光磁気記憶媒体が得られる。
【００１０】［実施例３］図３に本発明に係る他の光磁
気記憶媒体の構成図を示す。ここで、１は透光性基板、
２は第一誘電体層、３は第二誘電体層、４は光磁気記録
層、８は例えば酸素を含まないＳｉＮ膜からなる第三誘
電体層、９は第一誘電体層に比べて相対的に屈折率の小
さな例えばＳｉＯ2膜からなる第四誘電体層、６は反射
層である。上記の光磁気記憶媒体の製造に際しては、実
施例１と同様に１〜４を形成後、第三誘電体層ＳｉＮ膜
８はＳｉターゲットを用いてＮ2ガス雰囲気中で反応性
スパッタリング法にて形成し、第四誘電体層ＳｉＯ2膜
９は同一Ｓｉターゲットを用いて（Ａｒ＋Ｏ2）ガス雰
囲気中で反応性スパッタリング法にて形成する。その
後、例えばＡｌ、Ｔａ、ＳＵＳ、Ｔｉ、Ａｕ、Ｃｕ、Ａ
ｇ等からなる反射層６を形成する。第一誘電体層ＴｉＯ
2膜２と第二誘電体層ＴｉＮ膜３の製造については、実
施例１と同様に形成すればよい。膜厚としてはカー回転
角増大効果を効率的にするために第一誘電体層は45.0〜
50.0nmの範囲内、第二誘電体層は第一誘電体層の遊離酸
素の影響を抑えるとともに、該層での吸収ロスを極力抑
えるために1.0〜12.0nmに設定されることが望ましい。
ＳｉＮ膜の膜厚はＳｉＯ2の成分酸素と光磁気記録層と
の成膜時のミキシングを防げる程度、望ましくは1.0〜
１０．０ｎｍにすればよい。本構造においても、実施例
２と同様に誘電体層に屈折率ｎ＝２．０５を示すＡｌＮ
を用いていた従来の場合より見かけのカー回転角が最大
10倍程度大きくすることが可能で光磁気記録層の吸収も
最大約30％増加でき再生信号レベルも最大約1.8dB高く
なる。
【００１１】
【発明の効果】本発明では、以上に説明したように屈折
率が2.4以上3.5以下の酸化物第一誘電体層と、該第一誘
電体層と光磁気記録層との間に酸素を含まない第二誘電
体層を用いる構成をとっているので見かけのカー回転角
を大きくすることができ再生信号レベルも高くなり、耐
食性も確立され高い信頼性が得られる。さらに、第一、
第二誘電体層に同一ターゲットを用いることのできる材
料、例えば第一誘電体層にＴｉＯ2膜、第二誘電体層に
ＴｉＮ膜を用いると、第一、第二誘電体層を導入ガスの
種類の切り替えだけで、連続的に成膜することが可能で
あり、製造コスト低減効果も大きい。
【図面の簡単な説明】
【図１】 本発明の光磁気記憶媒体の構成の概略断面図
である。
【図２】 本発明の他の光磁気記憶媒体の構成の概略断
面図である。
【図３】 本発明の他の光磁気記憶媒体の構成の概略断
面図である。
【符号の説明】
１ 基板 ２ 第一誘電体層 ３ 第二誘電体層 ４ 光磁気記録層 ５、７、８ 第三誘電体層 ６ 反射層 ９ 第四誘電体層
───────────────────────────────────────────────────── フロントページの続き (72)発明者 太田 賢司 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内

Claims (4)

    【特許請求の範囲】
  1. 【請求項１】 誘電体層、光磁気記録層、保護層、また
    は誘電体層、光磁気記録層、保護層、反射層からなる光
    磁気記憶媒体において、屈折率が2.4以上3.5以下の酸化
    物からなる第一誘電体層と、該第一誘電体層と光磁気記
    録層との間に酸素を含まない第二誘電体層を設けたこと
    を特徴とする光磁気記憶媒体。
  2. 【請求項２】 請求項１記載の光磁気記憶媒体におい
    て、第一誘電体層がＴｉＯ2膜、光磁気記録層と接する
    第二誘電体層がＴｉＮ膜から成っていることを特徴とす
    る光磁気記憶媒体。
  3. 【請求項３】 同一元素を含んだ物質を、少なくとも２
    層以上に含む多層膜の製造方法において、前記同一元素
    をターゲットとして、導入するスパッタガスの種類を切
    り替えることによって各層を連続的に製造することを特
    徴とする多層膜の製造方法。
  4. 【請求項４】 請求項２記載の誘電体二層膜の製造方法
    において、第一誘電体層ＴｉＯ2膜はＴｉターゲットを
    用いてＯ2含有ガス雰囲気中で反応性スパッタリング法
    にて作製し、第二誘電体層ＴｉＮ膜は前記Ｔｉターゲッ
    トを用いてＮ2含有ガス雰囲気中で反応性スパッタリン
    グ法にて作製することを特徴とする光磁気記憶媒体の製
    造方法。
JP4054622A 1992-03-13 1992-03-13 光磁気記憶媒体 Expired - Fee Related JP2955112B2 (ja)

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JP4054622A JP2955112B2 (ja) 1992-03-13 1992-03-13 光磁気記憶媒体
CA002091490A CA2091490C (en) 1992-03-13 1993-03-11 Magneto-optic memory medium and a method for producing the same
EP93301891A EP0560625B1 (en) 1992-03-13 1993-03-12 A magneto-optic memory medium and a method for producing the same
DE69320511T DE69320511T2 (de) 1992-03-13 1993-03-12 Magnetooptisches Speichermedium und Verfahren zu seiner Herstellung
US08/358,682 US5643687A (en) 1992-03-13 1994-12-19 Magneto-optic memory medium and a method for producing the same

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JP4054622A JP2955112B2 (ja) 1992-03-13 1992-03-13 光磁気記憶媒体

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JPH05258361A true JPH05258361A (ja) 1993-10-08
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Country Link
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EP (1) EP0560625B1 (ja)
JP (1) JP2955112B2 (ja)
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JPS639050A (ja) * 1986-06-28 1988-01-14 Pioneer Electronic Corp 光磁気記録媒体
DE3716736A1 (de) * 1987-05-19 1988-12-01 Basf Ag Flaechenfoermiges, mehrschichtiges, magneto-optisches aufzeichnungsmaterial
US5228024A (en) * 1990-05-28 1993-07-13 Goldstar Co., Ltd. Magneto-optical disk possessing enhanced anti-reflective and anti-oxidative properties

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011132492A1 (ja) * 2010-04-19 2011-10-27 太陽誘電株式会社 薄膜キャパシタ

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EP0560625B1 (en) 1998-08-26
CA2091490C (en) 1997-10-14
JP2955112B2 (ja) 1999-10-04
EP0560625A2 (en) 1993-09-15
DE69320511T2 (de) 1999-04-01
CA2091490A1 (en) 1993-09-14
DE69320511D1 (de) 1998-10-01
EP0560625A3 (en) 1993-11-10
US5643687A (en) 1997-07-01

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