JPS59110052A - 光メモリ素子 - Google Patents

光メモリ素子

Info

Publication number
JPS59110052A
JPS59110052A JP57220999A JP22099982A JPS59110052A JP S59110052 A JPS59110052 A JP S59110052A JP 57220999 A JP57220999 A JP 57220999A JP 22099982 A JP22099982 A JP 22099982A JP S59110052 A JPS59110052 A JP S59110052A
Authority
JP
Japan
Prior art keywords
film
optical memory
memory element
transparent dielectric
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57220999A
Other languages
English (en)
Other versions
JPH0335734B2 (ja
Inventor
Kenji Oota
賢司 太田
Akira Takahashi
明 高橋
Junji Hirokane
順司 広兼
Hiroyuki Katayama
博之 片山
Hideyoshi Yamaoka
山岡　秀嘉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57220999A priority Critical patent/JPS59110052A/ja
Priority to DE3382791T priority patent/DE3382791T2/de
Priority to DE8888104159T priority patent/DE3382671T2/de
Priority to DE88104161T priority patent/DE3382702T2/de
Priority to EP92110340A priority patent/EP0509555B1/en
Priority to EP88104159A priority patent/EP0316508B1/en
Priority to DE8888104160T priority patent/DE3382672T2/de
Priority to DE8383302419T priority patent/DE3380539D1/de
Priority to EP83302419A priority patent/EP0111988B2/en
Priority to EP88104160A priority patent/EP0319636B1/en
Priority to EP88104161A priority patent/EP0314859B1/en
Priority to CA000427088A priority patent/CA1209698A/en
Publication of JPS59110052A publication Critical patent/JPS59110052A/ja
Publication of JPH0335734B2 publication Critical patent/JPH0335734B2/ja
Priority to US08/443,760 priority patent/US5738765A/en
Priority to US08/450,219 priority patent/US5714251A/en
Granted legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
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    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11—INFORMATION STORAGE
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 く技術分野〉 本発明はレーザ等の光により情報の記録・再生・消去等
を行なう光メモリ素子及びその製造方法に関する。
〈技来技術〉 近年、光メモリ素子は高密度・大容量なメモリとなる為
多方面で種々の研究開発が行なわれている。特に使用者
が情報の追加記録をなし得るメモリ、あるいは所用者が
情報の追加記録及び消去をなし得るメモリは巾広い応用
分野があり種々の材料やシステムが発表されている。前
者の材料としてけＴｅＯｘ、ＴｅＳｅ、ＴｅＣ等があり
後者の材料としてはＧｄＴｂＦｅ、ＧｄＴｂＤｙＦｅ、
ＴｅＦｅ等がある。
しかしこれら情報の追加記録できるメモリ、あるいは情
報の追加記録及び消去できるメモリの基本となる記憶材
料の大半は酸化等の耐食性に欠ける為その対策としてメ
モリ素子の構造には色々な工夫がなされている。
次に従来の光メモリ素子の構造を説明する。第１図は２
枚の基板１，２０間にスペーサ３によって空間４を設け
その中に不活性ガスを充填し、上記２枚の基板１，２の
内面に記録層５を設けたサンドイッチ構造の光メモリ素
子（時分［５７−３２４１３公報参照）である。この構
造の光メモリ素子は記録層を密封することによって酸化
を防止している。
又、第２図は基板６上において記録層７を酸化に対して
安定な透明膜８で挾み更にその上に酸化し易い膜９を被
覆した光メモリ素子（特願昭５７−１４９８Ｃ１６参照
）である。この構造の光メモリ素子は酸化し易い膜で酸
素を吸収する事によって酸素が記録層に到達しないよう
に配慮ｊ−でいるものである。
しかし以上の光メモリ素子はいずれも外部からの酸素等
腐食性物質の混入を避ける為には有効な構造であるが光
メモリ素子形成時に混入する酸素等に対しては効力を有
しないものである。
しかるに光メモリ素子の中には素子形成時に酸素等が混
入して１〜まうものがあった１３次に使用者が情報の追
加記録及び消去をなし得る光メモリ素子である磁気光学
記憶素子の酸化の問題について説明する。本発明者はガ
ラス基板上にＧｄＴｂＦｅとＳｉＯ２とＣｕを順次スパ
ッタリングして形成１−た磁気光学記憶素子について調
査を行なった。第３図はその磁気光学記憶素子である。
］、Ｏｉｄガラス基板、１１は膜厚１００〜２００Ａの
Ｇ　ｄ　Ｔ　１）　Ｆ　ｅ膜、１２は膜厚３００〜４０
０Ａの５１０２膜、１３は膜厚３００〜５００ＡのＣｕ
膜である。そしてこの磁気光学記憶素子を７０℃で保存
した場合の保磁力の経時変化を第４図に示す○同図によ
れば４００〜５００時間の経過時点での保磁力Ｈｅは初
期の保磁力Ｈｃ　ｏの半分以下に変化しているととが判
る。この傾向はＧｄＴｂＦｅ膜の膜厚が簿い程又保存温
度が高い程顕著である。
一方上記製法による形成時点の磁気光学記憶素子をオー
ジェ電子分光分析したところ第５図のような結果を得る
ことができた。同図に示す結果けＧｄＴｂＦｅ膜とＳｉ
Ｏ２膜との２層膜におけるＳｉ。
Ｆｅ、Ｏについてのオージェ電子強度を示している。
同図に示される如く２層膜の表面からガラス基板に進む
程酸素の含有量が増加しておりＧｄＴｂＦｅ膜中に多く
の酸素が混入していることが判る。とれは素子形成時の
スパッタリング中に５ｉ０２から分離した酸素がＧｃｉ
ＴｂＦｅ膜中に取シ込まれた為と考えられる。即ち素子
形成時点において既にＧｄＴｂＦｅ膜は酸化されている
のである。
〈目的〉 本発明は上述した如き光メモリ素子形成時に混入する酸
素を回避し得る新規な構造の光メモリ素子を提供するこ
とを目的とする。
〈実施例〉 以下本発明に係る光メモリ素子の実施例につ込て図面を
用いて詳細に説明する。
第６図は本発明に係る光メモリ素子の実施例の構成説明
図であるｏ１４はガラス、ポリカーボネート、アクリル
等の透明基板であり、該透明基板１４上に第１の透明誘
電体膜である透明なＡｔの窒化膜１５が形成され、該１
ｔの窒化膜１５上に希土類遷移金属合金薄膜（例えばＧ
ｄＴｂＦｅ。
ＴｂＤｙＦｅ　、　ＧｄＴｂＤｙＦｅ　、　ＴｂＦｅ　
、　ＧｄＦｅＣｏ　。
ＧｄＣｏ若しくはそれらの中にＳｎ、Ｚｎ、Ｓｉ、Ｂｉ
。
Ｂ等を添加含有させた膜）１６が形成され、該希土類遷
移金属合金薄膜１６上に第２の透明誘電体膜である透明
なｌｔの窒化膜１７が形成され、該Ａｔの窒化膜１７上
にＣｕ　＋　Ａｇ　＋　Ａ’　＋　Ａｕ等の反射膜１８
が形成される。この構造の磁気光学記憶素子についてオ
ージェ電子分光分析したところ第７図のような結果を得
ることができだ。同図に示す結果はＡｔの窒化膜とＧ　
ｄ　Ｔ　ｂ　Ｆ　ｅ膜とＡ、ｔの窒化膜との３層膜にお
けるＡｔ　、　Ｆ　ｅ　＋　Ｏについてのオージェ電子
強度を示している０同図に示される如＜ＧｄＴｂＦｅ膜
中には酸素は入っておらず、表これは膜形成後外部から
Ａｔの窒化膜に進入した酸素とガラス基板からＡｔの窒
化膜に進入した酸素が存在することを示している。この
実験結果から判断される如く希土類遷移金属合金薄膜１
６をＡｚの窒化膜にて挾持する構造とすれば膜形成時に
おける上記希土類遷移金属合金薄膜１６の酸化を防止し
得るものである。この理由はＳｉＯ２膜とけ異なりＡｔ
の窒化膜は酸素を含有しない為例えばＡｔターゲットを
用いて窒素雰囲気中で反応性スパッタリングして膜形成
すればその膜形成時において希土類遷移金属合金薄膜に
酸素が侵入する虞れがないのである。この点に鑑みれば
希土類遷移金属合金薄膜を他の酸素を含有しない透明誘
電体膜（例えばＭｇＦ２　＋　ＺｎＳ　、　ＣｅＦ３　
、　ＡｔＦ３・３ＮａＦ）で挾持する構造としても構わ
ない。しかし上記他の透明誘電体膜は誘電体膜用ターゲ
ットが多く多孔質でありその孔中にとり込まれた酸素や
水分がスパッタリング中に放出されて希土類遷移金属合
金薄膜を酸化する場合があるので真に酸素を含まない希
土類遷移金属合金薄膜を作成することが比較的離しいの
である。それに比してＡｔの窒化膜であればターゲット
がＡｔのみである為ターゲットの節約にもなり更にＡｔ
ターゲットが多孔質でない為にその孔中に酸素や水分を
とり込む虞れがないのである。との点からすればＳ１タ
ーゲツトを用いて窒素雰囲中で反応性スパッタリングし
て膜形成するＳｉ３Ｎ４を透明誘電体膜としてもよい。
又上述のＭｇ　Ｆ　２１　Ｚ　ｎ　Ｓ　＋　Ｃｅ　Ｆ　
３＋　ＡＺＦ　３・３Ｎａ　Ｆを真空蒸着により作成す
る方法も有益である。
ここで上記本発明に係る光メモリ素子の第１の透明誘電
体膜の膜厚は少なくとも１００Ａ必要である。その理由
は例えばガラス基板上に第１の透明誘電体膜を作成する
場合、ガラス基板中の酸素が第１の透明誘電体膜中に混
入する深さが５０Ａ程度である為第１の透明誘電体膜の
膜厚が１００Ａ以下の場合は第１の透明誘電体膜上に希
土類遷移金属合金薄膜をスパッタリングする際に希土類
遷移金属合金薄膜に酸素が入ってくる事が考えられるの
である０父上記第２の透明誘電体膜は主として磁気光学
回転角を高め再生信号の品質を向上する為に層設される
ものであるが再生信号の品質が充分な場合はそれを省略
して希土類遷移金属合金薄膜１６上に直接Ｃｕ　＋　Ａ
ｇ　ｌ　ＡＺ　Ｉ　Ａｕ等の反射膜を形成しても良い。
又第６図の構造の光メモリ素子の反射膜１８の上にＴ　
ｉ＋　Ｍｇ　＋希土類金属（Ｇｄ。
Ｔｂ、Ｄｙ、Ｈｏ、Ｙ等）、希土類・遷移金属合金（Ｇ
ｄＴｂＦｅ、Ｔｂ１）ｙＦｅ、ＧｄＣｏ、ＧｄＴｂＤｙ
Ｆｅ等）等の酸化容易性金属からなる膜を被覆すれば外
部からの酸素の混入も防ぐことができる完壁な素子構造
となる。
尚、本発明に係る光メモリ素子は記録媒体を酸素を含有
しない膜によってザンドイソチした構造である事に大き
カ特徴があるものであり、特に記録材料の種類及び素子
の形成順序を限定しなくとも良い。
く効果〉 本発明によれば光メモリ素子形成時に混入する酸素を防
止することができるので、光メそり素子の信頼性が大き
く向上するものである。
【図面の簡単な説明】
第」図、第２図、第３図は従来の光メモリ素子の構成説
明図、第４図は従来の光メモリ素子による保磁力の経時
変化を示すグラフ図、第５図は従来の光メモリ素子によ
るオージェ電子分光分析の結果を示すグラフ図、第６図
は本発明に係る光メモリ素子の実施例の構成説明図、第
７図は本発明に係る光メモリ素子によるオージェ電子分
光分析の結果を示すグラフ図である。 図中、１，２　基板　　３　スペーサ　　４．空間　　
５゛記録　　６．基板　　７．配録層８：透明膜　　９
：酸化し易い膜　　１０°ガラス基板　　１１　：　Ｇ
ｄＴｂＦｅ膜　　１２　：　５ｉＣｈ膜　　１３　：　
Ｃｕ膜　　１４：透明基板　　１５：第１の透明誘電体
膜　　１６　希土類遷移金属合金薄膜　　１７：第２の
透明誘電体膜　　１８：反射膜 代理人　弁理士　福　士　愛　彦（他２名）／８ 第６図 手続補正書 特願昭５７−２２０９９９ ２、発明の名称 光メモリ素子及びその製造方法 ３、補正をする者 事件との関係　　　特許出願人 住　所　　畳５４５大阪市阿倍野区長池町２２番２２号
自　　　発 ６、補正の対象 願　　書 ７　補正の内容 願書の表題に［特許法第３８条たたし書の規イによる特
許出願］と加入する。 願書の ［−１、発明の名称 七イゾウホウホウ 光メモリ素子及びその製造方法」 の欄の次に 「１′　　特許請求の範囲に記載された発明の数・・・
２」と加入する。 以　　　−１−

Claims (1)

  1. 【特許請求の範囲】 １、　光メモリ素子の記録媒体膜を少々くとも一方が透
    明誘電体膜である２層の酸素を含有しない膜間に挾持し
    たことを特徴とする光メモリ素子。 ２　前記記録媒体膜が希土類遷移金属合金薄膜であるこ
    とを特徴とする特許請求の範囲第１項記載の光メモリ素
    子。 ３　前記透明誘電体膜が窒化アルミニウムにて形成され
    ることを特徴とする特許請求の範囲第１項乃至第２項記
    載の光メモリ素子。 ４、　前記透明誘電体膜がＭｇＦ２．ＺｎＳ、ＣｅＦ３
    ＋ＡＡＦ３　・３ＮａＦ、　Ｓｉ３Ｎ４の少なくとも１
    種にて形成されることを特徴とする特許請求の範囲第１
    項乃至第２項記載の光メモリ素子。 ５、光メモリ素子の記録媒体膜を少なくとも一方が透明
    誘電体膜である２層の酸素を含有しない膜間に挾持した
    構造の光メモリ素子の製造方法であって、前記透明誘電
    体膜をＡ　Ｚ　＋　Ｓ　ｉ等の所定の物質を窒素雰囲気
    中で反応性スパッタリングする事により形成したことを
    特徴とする光メモリ素子の製造方法。
JP57220999A 1982-12-15 1982-12-15 光メモリ素子 Granted JPS59110052A (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP57220999A JPS59110052A (ja) 1982-12-15 1982-12-15 光メモリ素子
DE3382791T DE3382791T2 (de) 1982-12-15 1983-04-20 Magneto-optischer Speicher.
DE8383302419T DE3380539D1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
EP88104160A EP0319636B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
EP92110340A EP0509555B1 (en) 1982-12-15 1983-04-28 A method of making a magneto-optic memory device
EP88104159A EP0316508B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
DE8888104160T DE3382672T2 (de) 1982-12-15 1983-04-28 Magneto-optischer speicher.
DE8888104159T DE3382671T2 (de) 1982-12-15 1983-04-28 Magneto-optischer speicher.
EP83302419A EP0111988B2 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
DE88104161T DE3382702T2 (de) 1982-12-15 1983-04-28 Magneto-optischer Speicher.
EP88104161A EP0314859B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
CA000427088A CA1209698A (en) 1982-12-15 1983-04-29 Magneto-optic memory device
US08/443,760 US5738765A (en) 1982-12-15 1995-05-18 Magneto-optic memory device
US08/450,219 US5714251A (en) 1982-12-15 1995-05-25 Magneto-optic memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57220999A JPS59110052A (ja) 1982-12-15 1982-12-15 光メモリ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28317990A Division JPH03156755A (ja) 1990-10-19 1990-10-19 光メモリ素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59110052A true JPS59110052A (ja) 1984-06-25
JPH0335734B2 JPH0335734B2 (ja) 1991-05-29

Family

ID=16759878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57220999A Granted JPS59110052A (ja) 1982-12-15 1982-12-15 光メモリ素子

Country Status (1)

Country Link
JP (1) JPS59110052A (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117745A (ja) * 1984-11-01 1986-06-05 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 光学式データ記憶装置とその形成方法
JPS61144744A (ja) * 1984-12-17 1986-07-02 Kyocera Corp 光磁気記録素子及びその製法
JPS61170939A (ja) * 1985-01-24 1986-08-01 Seiko Epson Corp 光記録媒体
JPS61258353A (ja) * 1985-05-10 1986-11-15 Ricoh Co Ltd 光磁気記録媒体
JPS61278061A (ja) * 1985-06-03 1986-12-08 Canon Inc 光磁気記録媒体
JPS623448A (ja) * 1985-06-28 1987-01-09 Toshiba Corp 光磁気デイスク及びその製造方法
JPS62139156A (ja) * 1985-12-11 1987-06-22 Sharp Corp 光記録デバイスの製造方法
JPS62217444A (ja) * 1986-03-17 1987-09-24 Fujitsu Ltd 光磁気デイスク
JPS6410442A (en) * 1987-07-01 1989-01-13 Sharp Kk Optical memory element
JPH01159841A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 光ディスク
JPH01159840A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 光ディスク
JPH01160075A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 半導体レーザ
JPH01173453A (ja) * 1987-12-28 1989-07-10 Mitsubishi Kasei Corp 光磁気記録媒体
JPH01173455A (ja) * 1987-12-28 1989-07-10 Mitsubishi Kasei Corp 光磁気記録媒体
EP0378344A2 (en) * 1989-01-09 1990-07-18 Toray Industries, Inc. Optical recording medium
US5643687A (en) * 1992-03-13 1997-07-01 Sharp Kabushiki Kaisha Magneto-optic memory medium and a method for producing the same
US5695866A (en) * 1991-11-07 1997-12-09 Toray Industries Inc. Optical recording medium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956241A (ja) * 1982-09-27 1984-03-31 Canon Inc 光磁気記録媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956241A (ja) * 1982-09-27 1984-03-31 Canon Inc 光磁気記録媒体

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117745A (ja) * 1984-11-01 1986-06-05 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 光学式データ記憶装置とその形成方法
JPS61144744A (ja) * 1984-12-17 1986-07-02 Kyocera Corp 光磁気記録素子及びその製法
JPS61170939A (ja) * 1985-01-24 1986-08-01 Seiko Epson Corp 光記録媒体
JPS61258353A (ja) * 1985-05-10 1986-11-15 Ricoh Co Ltd 光磁気記録媒体
JPS61278061A (ja) * 1985-06-03 1986-12-08 Canon Inc 光磁気記録媒体
JPS623448A (ja) * 1985-06-28 1987-01-09 Toshiba Corp 光磁気デイスク及びその製造方法
JPH0518187B2 (ja) * 1985-12-11 1993-03-11 Sharp Kk
JPS62139156A (ja) * 1985-12-11 1987-06-22 Sharp Corp 光記録デバイスの製造方法
JPS62217444A (ja) * 1986-03-17 1987-09-24 Fujitsu Ltd 光磁気デイスク
JPS6410442A (en) * 1987-07-01 1989-01-13 Sharp Kk Optical memory element
JPH01159840A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 光ディスク
JPH01160075A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 半導体レーザ
JPH01159841A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd 光ディスク
JPH01173453A (ja) * 1987-12-28 1989-07-10 Mitsubishi Kasei Corp 光磁気記録媒体
JPH01173455A (ja) * 1987-12-28 1989-07-10 Mitsubishi Kasei Corp 光磁気記録媒体
EP0378344A2 (en) * 1989-01-09 1990-07-18 Toray Industries, Inc. Optical recording medium
US5098761A (en) * 1989-01-09 1992-03-24 Toray Industries, Inc. Optical recording medium
US5695866A (en) * 1991-11-07 1997-12-09 Toray Industries Inc. Optical recording medium
US5643687A (en) * 1992-03-13 1997-07-01 Sharp Kabushiki Kaisha Magneto-optic memory medium and a method for producing the same

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