JPH033213B2 - - Google Patents

Info

Publication number
JPH033213B2
JPH033213B2 JP56042293A JP4229381A JPH033213B2 JP H033213 B2 JPH033213 B2 JP H033213B2 JP 56042293 A JP56042293 A JP 56042293A JP 4229381 A JP4229381 A JP 4229381A JP H033213 B2 JPH033213 B2 JP H033213B2
Authority
JP
Japan
Prior art keywords
resist
resist film
resist material
pattern
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56042293A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57157241A (en
Inventor
Ken Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56042293A priority Critical patent/JPS57157241A/ja
Publication of JPS57157241A publication Critical patent/JPS57157241A/ja
Publication of JPH033213B2 publication Critical patent/JPH033213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56042293A 1981-03-25 1981-03-25 Formation of resist material and its pattern Granted JPS57157241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042293A JPS57157241A (en) 1981-03-25 1981-03-25 Formation of resist material and its pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042293A JPS57157241A (en) 1981-03-25 1981-03-25 Formation of resist material and its pattern

Publications (2)

Publication Number Publication Date
JPS57157241A JPS57157241A (en) 1982-09-28
JPH033213B2 true JPH033213B2 (enrdf_load_stackoverflow) 1991-01-18

Family

ID=12631988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042293A Granted JPS57157241A (en) 1981-03-25 1981-03-25 Formation of resist material and its pattern

Country Status (1)

Country Link
JP (1) JPS57157241A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPS5891632A (ja) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS60211939A (ja) * 1984-04-06 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> 微細パタン形成法
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
JPS61248035A (ja) * 1985-04-26 1986-11-05 Nippon Zeon Co Ltd 密着性の改良されたホトレジスト組成物
JPS62137830A (ja) * 1985-12-12 1987-06-20 Mitsubishi Electric Corp 微細パタ−ン形成方法
US5981143A (en) * 1997-11-26 1999-11-09 Trw Inc. Chemically treated photoresist for withstanding ion bombarded processing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494851A (enrdf_load_stackoverflow) * 1972-05-04 1974-01-17
JPS5339115A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Photosensitive recording medium
JPS5952824B2 (ja) * 1977-05-02 1984-12-21 株式会社日立製作所 感光性組成物処理方法
JPS59128B2 (ja) * 1977-11-18 1984-01-05 超エル・エス・アイ技術研究組合 電子線レジストの現像法
JPS5824937B2 (ja) * 1977-11-18 1983-05-24 超エル・エス・アイ技術研究組合 電子線レジストの現像法
JPS5472681A (en) * 1977-11-22 1979-06-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming pattern
JPS59129B2 (ja) * 1977-11-22 1984-01-05 超エル・エス・アイ技術研究組合 電子線レジストの現像法

Also Published As

Publication number Publication date
JPS57157241A (en) 1982-09-28

Similar Documents

Publication Publication Date Title
JPS60115222A (ja) 微細パタ−ン形成方法
US5194364A (en) Process for formation of resist patterns
JPH033213B2 (enrdf_load_stackoverflow)
JPH0463535B2 (enrdf_load_stackoverflow)
EP0333591B1 (en) Process for formation of resist patterns
JPH1195418A (ja) フォトレジスト膜及びパターン形成方法
JPH10507588A (ja) 基板上の反射防止コーティングの処理方法
JP2006243499A (ja) フォトレジストパターンの形成方法および半導体装置の製造方法
JPS6248211B2 (enrdf_load_stackoverflow)
US6143473A (en) Film patterning method utilizing post-development residue remover
US4588675A (en) Method for fine pattern formation on a photoresist
JPH0243172B2 (enrdf_load_stackoverflow)
KR920005636B1 (ko) 포토레지스트패턴 형성방법
JPH0669118A (ja) レジストパターンの形成方法
JPS5891632A (ja) 微細パタ−ン形成方法
JPS5860537A (ja) 乾式パタ−ン形成方法
JPS5886726A (ja) パタ−ン形成法
JP4322482B2 (ja) 微細レジストパターンの形成方法、および半導体装置の製造方法
JPH07152153A (ja) 感光性ペースト
JPH03282553A (ja) レジストパターンの形成方法
JPS646448B2 (enrdf_load_stackoverflow)
JPH045178B2 (enrdf_load_stackoverflow)
JPH0160551B2 (enrdf_load_stackoverflow)
JPH0313949A (ja) レジストパターンの形成方法
JP2001185473A (ja) レジストパターンの形成方法