JPH0463535B2 - - Google Patents

Info

Publication number
JPH0463535B2
JPH0463535B2 JP59001302A JP130284A JPH0463535B2 JP H0463535 B2 JPH0463535 B2 JP H0463535B2 JP 59001302 A JP59001302 A JP 59001302A JP 130284 A JP130284 A JP 130284A JP H0463535 B2 JPH0463535 B2 JP H0463535B2
Authority
JP
Japan
Prior art keywords
post
resist
bake
seconds
cure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59001302A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60145616A (ja
Inventor
Keiichi Bungo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59001302A priority Critical patent/JPS60145616A/ja
Publication of JPS60145616A publication Critical patent/JPS60145616A/ja
Publication of JPH0463535B2 publication Critical patent/JPH0463535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59001302A 1984-01-10 1984-01-10 レジストパタ−ンの形成方法 Granted JPS60145616A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59001302A JPS60145616A (ja) 1984-01-10 1984-01-10 レジストパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59001302A JPS60145616A (ja) 1984-01-10 1984-01-10 レジストパタ−ンの形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5185245A Division JPH06186755A (ja) 1993-07-01 1993-07-27 レジストパターンの形成方法

Publications (2)

Publication Number Publication Date
JPS60145616A JPS60145616A (ja) 1985-08-01
JPH0463535B2 true JPH0463535B2 (enrdf_load_stackoverflow) 1992-10-12

Family

ID=11497680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59001302A Granted JPS60145616A (ja) 1984-01-10 1984-01-10 レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS60145616A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
JP2552648B2 (ja) * 1985-12-02 1996-11-13 東京応化工業 株式会社 ポジ型ホトレジストパタ−ンの安定化方法
JPS62162330A (ja) * 1986-01-13 1987-07-18 Ushio Inc レジスト処理方法
JPS62215265A (ja) * 1986-03-17 1987-09-21 Ushio Inc レジスト処理方法
JPS63115337A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp フオトレジストの処理方法
JPH0740543B2 (ja) * 1987-02-17 1995-05-01 松下電子工業株式会社 半導体装置の製造方法
JPH07280739A (ja) * 1994-04-07 1995-10-27 Matsushita Electron Corp 異物検査方法
JP4730533B2 (ja) * 2005-09-21 2011-07-20 セイコーエプソン株式会社 基材処理方法
JP6383281B2 (ja) * 2014-12-16 2018-08-29 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
US10437153B2 (en) 2014-10-23 2019-10-08 SCREEN Holdings Co., Ltd. Heat treatment method and heat treatment apparatus
JP6393148B2 (ja) * 2014-10-23 2018-09-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148423A (en) * 1979-05-07 1980-11-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of pattern formation
JPS57106029A (en) * 1980-12-23 1982-07-01 Nippon Telegr & Teleph Corp <Ntt> Formation of high-heat-resistant, negative type resist pattern

Also Published As

Publication number Publication date
JPS60145616A (ja) 1985-08-01

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