JPS57106029A - Formation of high-heat-resistant, negative type resist pattern - Google Patents

Formation of high-heat-resistant, negative type resist pattern

Info

Publication number
JPS57106029A
JPS57106029A JP18127480A JP18127480A JPS57106029A JP S57106029 A JPS57106029 A JP S57106029A JP 18127480 A JP18127480 A JP 18127480A JP 18127480 A JP18127480 A JP 18127480A JP S57106029 A JPS57106029 A JP S57106029A
Authority
JP
Japan
Prior art keywords
pattern
substrate
resist
resist pattern
development
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18127480A
Other languages
Japanese (ja)
Inventor
Takeshi Sukegawa
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18127480A priority Critical patent/JPS57106029A/en
Publication of JPS57106029A publication Critical patent/JPS57106029A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Abstract

PURPOSE:To improve the adhesive property between a substrate and a pattern and the yield of products, by exposing a negative type resist film formed on a substrate, forming a desired resist pattern after development, and irradiating the whole pattern with an energized beam chosen among ultraviolet rays and the like. CONSTITUTION:A silicon oxide film of designated thickness is formed on a silicon substrate by thermal oxidation. A negative resist is coated in designated thickness with chloromethylate poly alpha-methyl styrene. A desired resist pattern is formed after exposure and development. The whole resist pattern is irradiated with an energized beam chosen among ultraviolet rays, far-ultraviolet rays, soft- X-rays and gamma rays. The substrate and negative resist are tightly fixed. This prevents the pattern from flash at its ends of deforming. The pattern shape is kept stable after development. The heat resistance is improved.
JP18127480A 1980-12-23 1980-12-23 Formation of high-heat-resistant, negative type resist pattern Pending JPS57106029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18127480A JPS57106029A (en) 1980-12-23 1980-12-23 Formation of high-heat-resistant, negative type resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18127480A JPS57106029A (en) 1980-12-23 1980-12-23 Formation of high-heat-resistant, negative type resist pattern

Publications (1)

Publication Number Publication Date
JPS57106029A true JPS57106029A (en) 1982-07-01

Family

ID=16097825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18127480A Pending JPS57106029A (en) 1980-12-23 1980-12-23 Formation of high-heat-resistant, negative type resist pattern

Country Status (1)

Country Link
JP (1) JPS57106029A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919323A (en) * 1982-07-23 1984-01-31 Matsushita Electric Ind Co Ltd Method for etching
JPS60145616A (en) * 1984-01-10 1985-08-01 Fujitsu Ltd Forming method of resist pattern
JPS60152030A (en) * 1984-01-19 1985-08-10 Mitsubishi Electric Corp Curing method for photosensitive resin
JPS61102035A (en) * 1984-10-24 1986-05-20 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61156273A (en) * 1984-12-28 1986-07-15 Dainippon Printing Co Ltd Duplicator of hologram
EP0627872A2 (en) * 1993-05-28 1994-12-07 International Business Machines Corporation Process for manufacturing metallized ceramic substrates
US5648198A (en) * 1994-12-13 1997-07-15 Kabushiki Kaisha Toshiba Resist hardening process having improved thermal stability

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54163680A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Pattern forming method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54163680A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Pattern forming method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919323A (en) * 1982-07-23 1984-01-31 Matsushita Electric Ind Co Ltd Method for etching
JPS60145616A (en) * 1984-01-10 1985-08-01 Fujitsu Ltd Forming method of resist pattern
JPH0463535B2 (en) * 1984-01-10 1992-10-12 Fujitsu Ltd
JPS60152030A (en) * 1984-01-19 1985-08-10 Mitsubishi Electric Corp Curing method for photosensitive resin
JPS61102035A (en) * 1984-10-24 1986-05-20 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61156273A (en) * 1984-12-28 1986-07-15 Dainippon Printing Co Ltd Duplicator of hologram
EP0627872A2 (en) * 1993-05-28 1994-12-07 International Business Machines Corporation Process for manufacturing metallized ceramic substrates
JPH06349978A (en) * 1993-05-28 1994-12-22 Internatl Business Mach Corp <Ibm> Method for selective etching of metal from substrate
EP0627872A3 (en) * 1993-05-28 1995-03-29 Ibm Process for manufacturing metallized ceramic substrates.
US5648198A (en) * 1994-12-13 1997-07-15 Kabushiki Kaisha Toshiba Resist hardening process having improved thermal stability

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