JPS60145616A - レジストパタ−ンの形成方法 - Google Patents

レジストパタ−ンの形成方法

Info

Publication number
JPS60145616A
JPS60145616A JP59001302A JP130284A JPS60145616A JP S60145616 A JPS60145616 A JP S60145616A JP 59001302 A JP59001302 A JP 59001302A JP 130284 A JP130284 A JP 130284A JP S60145616 A JPS60145616 A JP S60145616A
Authority
JP
Japan
Prior art keywords
resist
post
development
bake
seconds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59001302A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0463535B2 (enrdf_load_stackoverflow
Inventor
Keiichi Bungo
豊後　啓一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59001302A priority Critical patent/JPS60145616A/ja
Publication of JPS60145616A publication Critical patent/JPS60145616A/ja
Publication of JPH0463535B2 publication Critical patent/JPH0463535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59001302A 1984-01-10 1984-01-10 レジストパタ−ンの形成方法 Granted JPS60145616A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59001302A JPS60145616A (ja) 1984-01-10 1984-01-10 レジストパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59001302A JPS60145616A (ja) 1984-01-10 1984-01-10 レジストパタ−ンの形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5185245A Division JPH06186755A (ja) 1993-07-01 1993-07-27 レジストパターンの形成方法

Publications (2)

Publication Number Publication Date
JPS60145616A true JPS60145616A (ja) 1985-08-01
JPH0463535B2 JPH0463535B2 (enrdf_load_stackoverflow) 1992-10-12

Family

ID=11497680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59001302A Granted JPS60145616A (ja) 1984-01-10 1984-01-10 レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS60145616A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62129849A (ja) * 1985-12-02 1987-06-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジストパタ−ンの安定化方法
JPS62162330A (ja) * 1986-01-13 1987-07-18 Ushio Inc レジスト処理方法
JPS62215265A (ja) * 1986-03-17 1987-09-21 Ushio Inc レジスト処理方法
JPS63115337A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp フオトレジストの処理方法
JPS63200531A (ja) * 1987-02-17 1988-08-18 Matsushita Electronics Corp 半導体装置の製造方法
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
US6420076B1 (en) * 1994-04-07 2002-07-16 Matsushita Electric Industrial Co., Ltd. Method and apparatus of inspecting foreign substance on substrate surface
JP2007086353A (ja) * 2005-09-21 2007-04-05 Seiko Epson Corp 基材処理方法
WO2016063743A1 (ja) * 2014-10-23 2016-04-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP2016085265A (ja) * 2014-10-23 2016-05-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP2016115830A (ja) * 2014-12-16 2016-06-23 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148423A (en) * 1979-05-07 1980-11-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of pattern formation
JPS57106029A (en) * 1980-12-23 1982-07-01 Nippon Telegr & Teleph Corp <Ntt> Formation of high-heat-resistant, negative type resist pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148423A (en) * 1979-05-07 1980-11-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of pattern formation
JPS57106029A (en) * 1980-12-23 1982-07-01 Nippon Telegr & Teleph Corp <Ntt> Formation of high-heat-resistant, negative type resist pattern

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
JPS62129849A (ja) * 1985-12-02 1987-06-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジストパタ−ンの安定化方法
JPS62162330A (ja) * 1986-01-13 1987-07-18 Ushio Inc レジスト処理方法
JPS62215265A (ja) * 1986-03-17 1987-09-21 Ushio Inc レジスト処理方法
JPS63115337A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp フオトレジストの処理方法
JPS63200531A (ja) * 1987-02-17 1988-08-18 Matsushita Electronics Corp 半導体装置の製造方法
US6420076B1 (en) * 1994-04-07 2002-07-16 Matsushita Electric Industrial Co., Ltd. Method and apparatus of inspecting foreign substance on substrate surface
JP2007086353A (ja) * 2005-09-21 2007-04-05 Seiko Epson Corp 基材処理方法
WO2016063743A1 (ja) * 2014-10-23 2016-04-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP2016085265A (ja) * 2014-10-23 2016-05-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
US10437153B2 (en) 2014-10-23 2019-10-08 SCREEN Holdings Co., Ltd. Heat treatment method and heat treatment apparatus
JP2016115830A (ja) * 2014-12-16 2016-06-23 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法

Also Published As

Publication number Publication date
JPH0463535B2 (enrdf_load_stackoverflow) 1992-10-12

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