JPH0328828B2 - - Google Patents

Info

Publication number
JPH0328828B2
JPH0328828B2 JP57098068A JP9806882A JPH0328828B2 JP H0328828 B2 JPH0328828 B2 JP H0328828B2 JP 57098068 A JP57098068 A JP 57098068A JP 9806882 A JP9806882 A JP 9806882A JP H0328828 B2 JPH0328828 B2 JP H0328828B2
Authority
JP
Japan
Prior art keywords
layer
capacitor electrode
nitride film
capacitor
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57098068A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58215067A (ja
Inventor
Shigeru Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57098068A priority Critical patent/JPS58215067A/ja
Publication of JPS58215067A publication Critical patent/JPS58215067A/ja
Publication of JPH0328828B2 publication Critical patent/JPH0328828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57098068A 1982-06-08 1982-06-08 半導体集積回路装置 Granted JPS58215067A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57098068A JPS58215067A (ja) 1982-06-08 1982-06-08 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57098068A JPS58215067A (ja) 1982-06-08 1982-06-08 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS58215067A JPS58215067A (ja) 1983-12-14
JPH0328828B2 true JPH0328828B2 (cs) 1991-04-22

Family

ID=14210014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57098068A Granted JPS58215067A (ja) 1982-06-08 1982-06-08 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS58215067A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750769B2 (ja) * 1985-09-09 1995-05-31 株式会社日立製作所 半導体装置の製造方法
JPS6411347A (en) * 1987-07-03 1989-01-13 Rohm Co Ltd Monolithic integrated circuit
JPH0770616B2 (ja) * 1988-11-18 1995-07-31 日本電気株式会社 半導体メモリセルおよびその製造方法
DE69126925T2 (de) * 1990-05-31 1997-11-20 Canon Kk Verfahren zur Herstellung einer Halbleiterspeicheranordnung mit Kondensator
JP2846286B2 (ja) * 1996-05-20 1999-01-13 株式会社日立製作所 半導体記憶装置の製造方法
JP2839874B2 (ja) * 1996-09-17 1998-12-16 株式会社日立製作所 半導体記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108392A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device
JPS556866A (en) * 1978-06-29 1980-01-18 Nec Corp Semiconductor device
JPS5824022B2 (ja) * 1979-10-17 1983-05-18 沖電気工業株式会社 Ｍｏｓ型半導体記憶装置の製造方法

Also Published As

Publication number Publication date
JPS58215067A (ja) 1983-12-14

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