JPH0324069B2 - - Google Patents
Info
- Publication number
- JPH0324069B2 JPH0324069B2 JP56138833A JP13883381A JPH0324069B2 JP H0324069 B2 JPH0324069 B2 JP H0324069B2 JP 56138833 A JP56138833 A JP 56138833A JP 13883381 A JP13883381 A JP 13883381A JP H0324069 B2 JPH0324069 B2 JP H0324069B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- region
- crystal silicon
- layer
- element isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 238000002955 isolation Methods 0.000 claims description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000002265 prevention Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- -1 Boron ions Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138833A JPS5840852A (ja) | 1981-09-03 | 1981-09-03 | 相補型ｍｏｓ半導体装置及びその製造方法 |
| US06/307,877 US4560421A (en) | 1980-10-02 | 1981-10-02 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138833A JPS5840852A (ja) | 1981-09-03 | 1981-09-03 | 相補型ｍｏｓ半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5840852A JPS5840852A (ja) | 1983-03-09 |
| JPH0324069B2 true JPH0324069B2 (fr) | 1991-04-02 |
Family
ID=15231280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56138833A Granted JPS5840852A (ja) | 1980-10-02 | 1981-09-03 | 相補型ｍｏｓ半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840852A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961119A (ja) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6030169A (ja) * | 1983-07-29 | 1985-02-15 | Toshiba Corp | 相補型ｍｏｓ半導体装置及びその製造方法 |
| JPS6074664A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 相補型ｍｏｓ半導体装置の製造方法 |
| JPS6070757A (ja) * | 1983-09-28 | 1985-04-22 | Hitachi Ltd | 半導体集積回路 |
| JPS6089957A (ja) * | 1983-10-24 | 1985-05-20 | Nippon Telegr & Teleph Corp <Ntt> | 相補形半導体装置 |
| DE4020267C1 (fr) * | 1990-06-26 | 1991-10-24 | Mercedes-Benz Aktiengesellschaft, 7000 Stuttgart, De | |
| DE4020266C1 (fr) * | 1990-06-26 | 1991-09-26 | Mercedes-Benz Aktiengesellschaft, 7000 Stuttgart, De | |
| JP2993339B2 (ja) * | 1993-12-03 | 1999-12-20 | ヤマハ株式会社 | 半導体装置の製造方法 |
-
1981
- 1981-09-03 JP JP56138833A patent/JPS5840852A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5840852A (ja) | 1983-03-09 |
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