JPS6362108B2 - - Google Patents
Info
- Publication number
- JPS6362108B2 JPS6362108B2 JP54136661A JP13666179A JPS6362108B2 JP S6362108 B2 JPS6362108 B2 JP S6362108B2 JP 54136661 A JP54136661 A JP 54136661A JP 13666179 A JP13666179 A JP 13666179A JP S6362108 B2 JPS6362108 B2 JP S6362108B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- polycrystalline silicon
- source
- silicon film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 47
- 239000012535 impurity Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 230000000295 complement effect Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 10
- 229910016006 MoSi Inorganic materials 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- -1 Boron ions Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13666179A JPS5660063A (en) | 1979-10-23 | 1979-10-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13666179A JPS5660063A (en) | 1979-10-23 | 1979-10-23 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5660063A JPS5660063A (en) | 1981-05-23 |
| JPS6362108B2 true JPS6362108B2 (fr) | 1988-12-01 |
Family
ID=15180536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13666179A Granted JPS5660063A (en) | 1979-10-23 | 1979-10-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5660063A (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59115554A (ja) * | 1982-12-22 | 1984-07-04 | Toshiba Corp | 半導体装置の製造方法 |
| DE3304588A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von mos-transistoren mit flachen source/drain-gebieten, kurzen kanallaengen und einer selbstjustierten, aus einem metallsilizid bestehenden kontaktierungsebene |
| JPS59208773A (ja) * | 1983-05-12 | 1984-11-27 | Nec Corp | 半導体装置の製造方法 |
| JPS59208772A (ja) * | 1983-05-12 | 1984-11-27 | Nec Corp | 半導体装置の製造方法 |
| JPS6165470A (ja) * | 1984-09-07 | 1986-04-04 | Hitachi Ltd | 半導体集積回路装置 |
| JPS61139058A (ja) * | 1984-12-11 | 1986-06-26 | Seiko Epson Corp | 半導体製造装置 |
| US4648175A (en) * | 1985-06-12 | 1987-03-10 | Ncr Corporation | Use of selectively deposited tungsten for contact formation and shunting metallization |
| JP2807226B2 (ja) * | 1987-09-12 | 1998-10-08 | ソニー株式会社 | 半導体装置の製造方法 |
| JPH0226021A (ja) * | 1988-07-14 | 1990-01-29 | Matsushita Electron Corp | 多層配線の形成方法 |
| JPH0758701B2 (ja) * | 1989-06-08 | 1995-06-21 | 株式会社東芝 | 半導体装置の製造方法 |
-
1979
- 1979-10-23 JP JP13666179A patent/JPS5660063A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5660063A (en) | 1981-05-23 |
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