JPS6360549B2 - - Google Patents
Info
- Publication number
- JPS6360549B2 JPS6360549B2 JP55020496A JP2049680A JPS6360549B2 JP S6360549 B2 JPS6360549 B2 JP S6360549B2 JP 55020496 A JP55020496 A JP 55020496A JP 2049680 A JP2049680 A JP 2049680A JP S6360549 B2 JPS6360549 B2 JP S6360549B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidation
- substrate
- conductivity type
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 43
- 239000012535 impurity Substances 0.000 claims description 24
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 45
- 238000005468 ion implantation Methods 0.000 description 26
- 108091006146 Channels Proteins 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 12
- 238000005530 etching Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- -1 arsenic ions Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2049680A JPS56118366A (en) | 1980-02-22 | 1980-02-22 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2049680A JPS56118366A (en) | 1980-02-22 | 1980-02-22 | Preparation of semiconductor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62266328A Division JPS63119250A (ja) | 1987-10-23 | 1987-10-23 | 半導体装置の製法 |
| JP1245104A Division JPH02119172A (ja) | 1989-09-22 | 1989-09-22 | 半導体装置の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56118366A JPS56118366A (en) | 1981-09-17 |
| JPS6360549B2 true JPS6360549B2 (fr) | 1988-11-24 |
Family
ID=12028762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2049680A Granted JPS56118366A (en) | 1980-02-22 | 1980-02-22 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56118366A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3314450A1 (de) * | 1983-04-21 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen |
| JPH0628297B2 (ja) * | 1983-11-28 | 1994-04-13 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPS618931A (ja) * | 1984-06-25 | 1986-01-16 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS6144456A (ja) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS63119250A (ja) * | 1987-10-23 | 1988-05-23 | Hitachi Ltd | 半導体装置の製法 |
| JPH02206162A (ja) * | 1989-02-06 | 1990-08-15 | Matsushita Electron Corp | 半導体装置の製造方法 |
| EP0745272A1 (fr) * | 1994-02-15 | 1996-12-04 | National Semiconductor Corporation | Transistors cmos a haute tension, pour un procede cmos standard |
| US5795809A (en) * | 1995-05-25 | 1998-08-18 | Advanced Micro Devices, Inc. | Semiconductor wafer fabrication process including gettering utilizing a combined oxidation technique |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5661139A (en) * | 1979-10-25 | 1981-05-26 | Seiko Epson Corp | Manufacture of semiconductor device |
-
1980
- 1980-02-22 JP JP2049680A patent/JPS56118366A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5661139A (en) * | 1979-10-25 | 1981-05-26 | Seiko Epson Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56118366A (en) | 1981-09-17 |
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