JPH032292B2 - - Google Patents

Info

Publication number
JPH032292B2
JPH032292B2 JP59250668A JP25066884A JPH032292B2 JP H032292 B2 JPH032292 B2 JP H032292B2 JP 59250668 A JP59250668 A JP 59250668A JP 25066884 A JP25066884 A JP 25066884A JP H032292 B2 JPH032292 B2 JP H032292B2
Authority
JP
Japan
Prior art keywords
pattern
windage
photomask
mask
overlap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59250668A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60201630A (ja
Inventor
Josefu Giroomu Uooresu
Fuaarei Rooran Jon
Rogosukii Jan
Aasaa Shinpuson Robaato
Bikutaa Uebaa Edowaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS60201630A publication Critical patent/JPS60201630A/ja
Publication of JPH032292B2 publication Critical patent/JPH032292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP59250668A 1984-03-23 1984-11-29 検査パタ−ンの生成方法 Granted JPS60201630A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US592986 1984-03-23
US06/592,986 US4581537A (en) 1984-03-23 1984-03-23 Method for generating inspection patterns

Publications (2)

Publication Number Publication Date
JPS60201630A JPS60201630A (ja) 1985-10-12
JPH032292B2 true JPH032292B2 (enExample) 1991-01-14

Family

ID=24372883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59250668A Granted JPS60201630A (ja) 1984-03-23 1984-11-29 検査パタ−ンの生成方法

Country Status (4)

Country Link
US (1) US4581537A (enExample)
EP (1) EP0155687B1 (enExample)
JP (1) JPS60201630A (enExample)
DE (1) DE3578261D1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0508151B1 (en) * 1991-03-13 1998-08-12 Fujitsu Limited Charged particle beam exposure system and charged particle beam exposure method
KR0144489B1 (ko) * 1995-10-04 1998-07-01 김주용 반도체소자의 공정결함 검사방법
JP4076644B2 (ja) 1997-12-05 2008-04-16 株式会社ルネサステクノロジ パターン歪検出装置及び検出方法
JP7111496B2 (ja) * 2018-04-12 2022-08-02 株式会社ニューフレアテクノロジー パターン検査装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432766A (en) * 1977-08-18 1979-03-10 Fujitsu Ltd Inspecting system for pattern and like
JPS5481075A (en) * 1977-11-24 1979-06-28 Cho Lsi Gijutsu Kenkyu Kumiai Method of detecting article image using electron beam
JPS55105329A (en) * 1978-12-28 1980-08-12 Fujitsu Ltd Inspecting method for pattern
US4494004A (en) * 1980-11-28 1985-01-15 International Business Machines Corporation Electron beam system
DE3070433D1 (en) * 1980-12-18 1985-05-09 Ibm Method for the inspection and automatic sorting of objects with configurations of fixed dimensional tolerances, and device for carrying out the method
US4357540A (en) * 1980-12-19 1982-11-02 International Business Machines Corporation Semiconductor device array mask inspection method and apparatus
US4365163A (en) * 1980-12-19 1982-12-21 International Business Machines Corporation Pattern inspection tool - method and apparatus
EP0054710B1 (de) * 1980-12-19 1986-02-05 International Business Machines Corporation Verfahren zum Ausrichten und Prüfen eines mit Mustern versehenen Werkstücks, z.B. einer Maske für die Herstellung von Halbleiterelementen
JPS57198628A (en) * 1981-05-30 1982-12-06 Toshiba Corp Inspecting device for pattern
US4475037A (en) * 1982-05-11 1984-10-02 International Business Machines Corporation Method of inspecting a mask using an electron beam vector scan system

Also Published As

Publication number Publication date
EP0155687A2 (en) 1985-09-25
DE3578261D1 (de) 1990-07-19
EP0155687B1 (en) 1990-06-13
EP0155687A3 (en) 1987-12-16
JPS60201630A (ja) 1985-10-12
US4581537A (en) 1986-04-08

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