JPS60201630A - 検査パタ−ンの生成方法 - Google Patents
検査パタ−ンの生成方法Info
- Publication number
- JPS60201630A JPS60201630A JP59250668A JP25066884A JPS60201630A JP S60201630 A JPS60201630 A JP S60201630A JP 59250668 A JP59250668 A JP 59250668A JP 25066884 A JP25066884 A JP 25066884A JP S60201630 A JPS60201630 A JP S60201630A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- windage
- photomask
- inspection
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 35
- 238000007689 inspection Methods 0.000 claims description 30
- 238000012360 testing method Methods 0.000 description 38
- 238000010894 electron beam technology Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- 230000007547 defect Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007635 classification algorithm Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010845 search algorithm Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US592986 | 1984-03-23 | ||
| US06/592,986 US4581537A (en) | 1984-03-23 | 1984-03-23 | Method for generating inspection patterns |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60201630A true JPS60201630A (ja) | 1985-10-12 |
| JPH032292B2 JPH032292B2 (enExample) | 1991-01-14 |
Family
ID=24372883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59250668A Granted JPS60201630A (ja) | 1984-03-23 | 1984-11-29 | 検査パタ−ンの生成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4581537A (enExample) |
| EP (1) | EP0155687B1 (enExample) |
| JP (1) | JPS60201630A (enExample) |
| DE (1) | DE3578261D1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6343370B1 (en) | 1997-12-05 | 2002-01-29 | Mitsubishi Denki Kabusiki Kaisha | Apparatus and process for pattern distortion detection for semiconductor process and semiconductor device manufactured by use of the apparatus or process |
| JP2019184461A (ja) * | 2018-04-12 | 2019-10-24 | 株式会社ニューフレアテクノロジー | パターン検査装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0508151B1 (en) * | 1991-03-13 | 1998-08-12 | Fujitsu Limited | Charged particle beam exposure system and charged particle beam exposure method |
| KR0144489B1 (ko) * | 1995-10-04 | 1998-07-01 | 김주용 | 반도체소자의 공정결함 검사방법 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5432766A (en) * | 1977-08-18 | 1979-03-10 | Fujitsu Ltd | Inspecting system for pattern and like |
| JPS55105329A (en) * | 1978-12-28 | 1980-08-12 | Fujitsu Ltd | Inspecting method for pattern |
| JPS57113227A (en) * | 1980-12-19 | 1982-07-14 | Ibm | Method and device for inspecting article to be inspected with pattern |
| JPS57120807A (en) * | 1980-12-18 | 1982-07-28 | Ibm | Object inspector |
| JPS57198628A (en) * | 1981-05-30 | 1982-12-06 | Toshiba Corp | Inspecting device for pattern |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5481075A (en) * | 1977-11-24 | 1979-06-28 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of detecting article image using electron beam |
| US4494004A (en) * | 1980-11-28 | 1985-01-15 | International Business Machines Corporation | Electron beam system |
| US4365163A (en) * | 1980-12-19 | 1982-12-21 | International Business Machines Corporation | Pattern inspection tool - method and apparatus |
| EP0054710B1 (de) * | 1980-12-19 | 1986-02-05 | International Business Machines Corporation | Verfahren zum Ausrichten und Prüfen eines mit Mustern versehenen Werkstücks, z.B. einer Maske für die Herstellung von Halbleiterelementen |
| US4475037A (en) * | 1982-05-11 | 1984-10-02 | International Business Machines Corporation | Method of inspecting a mask using an electron beam vector scan system |
-
1984
- 1984-03-23 US US06/592,986 patent/US4581537A/en not_active Expired - Fee Related
- 1984-11-29 JP JP59250668A patent/JPS60201630A/ja active Granted
-
1985
- 1985-03-21 DE DE8585103275T patent/DE3578261D1/de not_active Expired - Lifetime
- 1985-03-21 EP EP85103275A patent/EP0155687B1/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5432766A (en) * | 1977-08-18 | 1979-03-10 | Fujitsu Ltd | Inspecting system for pattern and like |
| JPS55105329A (en) * | 1978-12-28 | 1980-08-12 | Fujitsu Ltd | Inspecting method for pattern |
| JPS57120807A (en) * | 1980-12-18 | 1982-07-28 | Ibm | Object inspector |
| JPS57113227A (en) * | 1980-12-19 | 1982-07-14 | Ibm | Method and device for inspecting article to be inspected with pattern |
| JPS57198628A (en) * | 1981-05-30 | 1982-12-06 | Toshiba Corp | Inspecting device for pattern |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6343370B1 (en) | 1997-12-05 | 2002-01-29 | Mitsubishi Denki Kabusiki Kaisha | Apparatus and process for pattern distortion detection for semiconductor process and semiconductor device manufactured by use of the apparatus or process |
| JP2019184461A (ja) * | 2018-04-12 | 2019-10-24 | 株式会社ニューフレアテクノロジー | パターン検査装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0155687A2 (en) | 1985-09-25 |
| DE3578261D1 (de) | 1990-07-19 |
| JPH032292B2 (enExample) | 1991-01-14 |
| EP0155687B1 (en) | 1990-06-13 |
| EP0155687A3 (en) | 1987-12-16 |
| US4581537A (en) | 1986-04-08 |
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