JPS60201630A - 検査パタ−ンの生成方法 - Google Patents

検査パタ−ンの生成方法

Info

Publication number
JPS60201630A
JPS60201630A JP59250668A JP25066884A JPS60201630A JP S60201630 A JPS60201630 A JP S60201630A JP 59250668 A JP59250668 A JP 59250668A JP 25066884 A JP25066884 A JP 25066884A JP S60201630 A JPS60201630 A JP S60201630A
Authority
JP
Japan
Prior art keywords
pattern
windage
photomask
inspection
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59250668A
Other languages
English (en)
Japanese (ja)
Other versions
JPH032292B2 (enExample
Inventor
ウオーレス・ジヨセフ・ギローム
ジヨン・フアーレイ・ローラン
ジヤン・ロゴスキー
ロバート・アーサー・シンプソン
エドワード・ビクター・ウエバー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS60201630A publication Critical patent/JPS60201630A/ja
Publication of JPH032292B2 publication Critical patent/JPH032292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3005Observing the objects or the point of impact on the object

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP59250668A 1984-03-23 1984-11-29 検査パタ−ンの生成方法 Granted JPS60201630A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US592986 1984-03-23
US06/592,986 US4581537A (en) 1984-03-23 1984-03-23 Method for generating inspection patterns

Publications (2)

Publication Number Publication Date
JPS60201630A true JPS60201630A (ja) 1985-10-12
JPH032292B2 JPH032292B2 (enExample) 1991-01-14

Family

ID=24372883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59250668A Granted JPS60201630A (ja) 1984-03-23 1984-11-29 検査パタ−ンの生成方法

Country Status (4)

Country Link
US (1) US4581537A (enExample)
EP (1) EP0155687B1 (enExample)
JP (1) JPS60201630A (enExample)
DE (1) DE3578261D1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6343370B1 (en) 1997-12-05 2002-01-29 Mitsubishi Denki Kabusiki Kaisha Apparatus and process for pattern distortion detection for semiconductor process and semiconductor device manufactured by use of the apparatus or process
JP2019184461A (ja) * 2018-04-12 2019-10-24 株式会社ニューフレアテクノロジー パターン検査装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0508151B1 (en) * 1991-03-13 1998-08-12 Fujitsu Limited Charged particle beam exposure system and charged particle beam exposure method
KR0144489B1 (ko) * 1995-10-04 1998-07-01 김주용 반도체소자의 공정결함 검사방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432766A (en) * 1977-08-18 1979-03-10 Fujitsu Ltd Inspecting system for pattern and like
JPS55105329A (en) * 1978-12-28 1980-08-12 Fujitsu Ltd Inspecting method for pattern
JPS57113227A (en) * 1980-12-19 1982-07-14 Ibm Method and device for inspecting article to be inspected with pattern
JPS57120807A (en) * 1980-12-18 1982-07-28 Ibm Object inspector
JPS57198628A (en) * 1981-05-30 1982-12-06 Toshiba Corp Inspecting device for pattern

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481075A (en) * 1977-11-24 1979-06-28 Cho Lsi Gijutsu Kenkyu Kumiai Method of detecting article image using electron beam
US4494004A (en) * 1980-11-28 1985-01-15 International Business Machines Corporation Electron beam system
US4365163A (en) * 1980-12-19 1982-12-21 International Business Machines Corporation Pattern inspection tool - method and apparatus
EP0054710B1 (de) * 1980-12-19 1986-02-05 International Business Machines Corporation Verfahren zum Ausrichten und Prüfen eines mit Mustern versehenen Werkstücks, z.B. einer Maske für die Herstellung von Halbleiterelementen
US4475037A (en) * 1982-05-11 1984-10-02 International Business Machines Corporation Method of inspecting a mask using an electron beam vector scan system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432766A (en) * 1977-08-18 1979-03-10 Fujitsu Ltd Inspecting system for pattern and like
JPS55105329A (en) * 1978-12-28 1980-08-12 Fujitsu Ltd Inspecting method for pattern
JPS57120807A (en) * 1980-12-18 1982-07-28 Ibm Object inspector
JPS57113227A (en) * 1980-12-19 1982-07-14 Ibm Method and device for inspecting article to be inspected with pattern
JPS57198628A (en) * 1981-05-30 1982-12-06 Toshiba Corp Inspecting device for pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6343370B1 (en) 1997-12-05 2002-01-29 Mitsubishi Denki Kabusiki Kaisha Apparatus and process for pattern distortion detection for semiconductor process and semiconductor device manufactured by use of the apparatus or process
JP2019184461A (ja) * 2018-04-12 2019-10-24 株式会社ニューフレアテクノロジー パターン検査装置

Also Published As

Publication number Publication date
EP0155687A2 (en) 1985-09-25
DE3578261D1 (de) 1990-07-19
JPH032292B2 (enExample) 1991-01-14
EP0155687B1 (en) 1990-06-13
EP0155687A3 (en) 1987-12-16
US4581537A (en) 1986-04-08

Similar Documents

Publication Publication Date Title
JPH0691003B2 (ja) レチクル/マスクの検査方法とその検査装置
US4878177A (en) Method for drawing a desired circuit pattern using charged particle beam
US4816692A (en) Pattern splicing system and method for scanning of electron beam system
JP2010044414A (ja) 回路設計図、検査方法、および処理方法
US6303251B1 (en) Mask pattern correction process, photomask and semiconductor integrated circuit device
JPH0434434A (ja) パターン欠陥検査方法とその装置
JP3154802B2 (ja) パターン欠陥検査装置
JPH0829503A (ja) Ic不良解析方法及び不良解析装置
JPH04261538A (ja) 画像データ検証方法及び装置
JPS60201630A (ja) 検査パタ−ンの生成方法
US7745069B2 (en) Structure and methodology for fabrication and inspection of photomasks
JP4615156B2 (ja) 光近接補正された露光パターンを利用する露光方法,光近接補正された露光データの生成装置,及び光近接補正された露光データの露光装置
JP2004294551A (ja) 光近接効果補正方法、光近接効果補正装置、及びプログラム
JP3413110B2 (ja) パターン検査装置、パターン検査方法およびパターン検査プログラムを格納した記録媒体
KR940009765B1 (ko) 전자빔노광장치
US6327379B2 (en) Pattern inspection method and apparatus
JP2002296753A (ja) 図形データ展開方法
JPH0515219B2 (enExample)
JP2008020251A (ja) 欠陥検査方法、欠陥検査装置、及びパターン抽出方法
JP7220126B2 (ja) 検査装置
JPH0254495B2 (enExample)
JPH0145735B2 (enExample)
JP3311853B2 (ja) パターン検査装置
Eidson Solid state: Fast electron-beam lithography: High blanking speeds may make this new system a serious challenger in producing submicrometer ICs
JPS6066428A (ja) 電子ビ−ム露光方法