JPH03212958A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH03212958A JPH03212958A JP916390A JP916390A JPH03212958A JP H03212958 A JPH03212958 A JP H03212958A JP 916390 A JP916390 A JP 916390A JP 916390 A JP916390 A JP 916390A JP H03212958 A JPH03212958 A JP H03212958A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- wiring
- bpsg
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP916390A JPH03212958A (ja) | 1990-01-18 | 1990-01-18 | 半導体装置の製造方法 |
DE19914190089 DE4190089T1 (enrdf_load_stackoverflow) | 1990-01-18 | 1991-01-17 | |
PCT/JP1991/000040 WO1991011023A1 (fr) | 1990-01-18 | 1991-01-17 | Procede de production de dispositifs semi-conducteurs |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP916390A JPH03212958A (ja) | 1990-01-18 | 1990-01-18 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03212958A true JPH03212958A (ja) | 1991-09-18 |
Family
ID=11712948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP916390A Pending JPH03212958A (ja) | 1990-01-18 | 1990-01-18 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH03212958A (enrdf_load_stackoverflow) |
DE (1) | DE4190089T1 (enrdf_load_stackoverflow) |
WO (1) | WO1991011023A1 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488007A (en) * | 1992-04-16 | 1996-01-30 | Samsung Electronics Co., Ltd. | Method of manufacture of a semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6388829A (ja) * | 1986-10-01 | 1988-04-19 | Matsushita Electric Ind Co Ltd | 気相成長方法 |
JPS63192239A (ja) * | 1987-02-05 | 1988-08-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6476727A (en) * | 1987-09-17 | 1989-03-22 | Nec Corp | Manufacture of semiconductor device |
-
1990
- 1990-01-18 JP JP916390A patent/JPH03212958A/ja active Pending
-
1991
- 1991-01-17 WO PCT/JP1991/000040 patent/WO1991011023A1/ja active Application Filing
- 1991-01-17 DE DE19914190089 patent/DE4190089T1/de not_active Ceased
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488007A (en) * | 1992-04-16 | 1996-01-30 | Samsung Electronics Co., Ltd. | Method of manufacture of a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
WO1991011023A1 (fr) | 1991-07-25 |
DE4190089T1 (enrdf_load_stackoverflow) | 1992-01-30 |
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