JPH0318179B2 - - Google Patents
Info
- Publication number
- JPH0318179B2 JPH0318179B2 JP58224644A JP22464483A JPH0318179B2 JP H0318179 B2 JPH0318179 B2 JP H0318179B2 JP 58224644 A JP58224644 A JP 58224644A JP 22464483 A JP22464483 A JP 22464483A JP H0318179 B2 JPH0318179 B2 JP H0318179B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- pattern
- upper layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000008033 biological extinction Effects 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims description 3
- 230000005865 ionizing radiation Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- -1 quinone diazide compound Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000001540 azides Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- HWEONUWVYWIJPF-OWOJBTEDSA-N 1-azido-4-[(e)-2-(4-azidophenyl)ethenyl]benzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1\C=C\C1=CC=C(N=[N+]=[N-])C=C1 HWEONUWVYWIJPF-OWOJBTEDSA-N 0.000 description 1
- LWDPERQKNXVEAE-UHFFFAOYSA-N 1-n,3-n-didiazobenzene-1,3-disulfonamide Chemical compound [N-]=[N+]=NS(=O)(=O)C1=CC=CC(S(=O)(=O)N=[N+]=[N-])=C1 LWDPERQKNXVEAE-UHFFFAOYSA-N 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- VGPBSDQELAMFAH-UHFFFAOYSA-N 4-(4-azidosulfonylphenoxy)-n-diazobenzenesulfonamide Chemical compound C1=CC(S(=O)(=O)N=[N+]=[N-])=CC=C1OC1=CC=C(S(=O)(=O)N=[N+]=[N-])C=C1 VGPBSDQELAMFAH-UHFFFAOYSA-N 0.000 description 1
- DQFBYFPFKXHELB-UHFFFAOYSA-N Chalcone Natural products C=1C=CC=CC=1C(=O)C=CC1=CC=CC=C1 DQFBYFPFKXHELB-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N acetone Substances CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- XSCHRSMBECNVNS-UHFFFAOYSA-N benzopyrazine Natural products N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 1
- 235000005513 chalcones Nutrition 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VHRYZQNGTZXDNX-UHFFFAOYSA-N methacryloyl chloride Chemical compound CC(=C)C(Cl)=O VHRYZQNGTZXDNX-UHFFFAOYSA-N 0.000 description 1
- XMRSVLCCIJUKDQ-UHFFFAOYSA-N n-diazobenzenesulfonamide Chemical class [N-]=[N+]=NS(=O)(=O)C1=CC=CC=C1 XMRSVLCCIJUKDQ-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 1
- CTRLRINCMYICJO-UHFFFAOYSA-N phenyl azide Chemical class [N-]=[N+]=NC1=CC=CC=C1 CTRLRINCMYICJO-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical compound C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 1
- 229920005593 poly(benzyl methacrylate) Polymers 0.000 description 1
- 229920000182 polyphenyl methacrylate Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- DQFBYFPFKXHELB-VAWYXSNFSA-N trans-chalcone Chemical compound C=1C=CC=CC=1C(=O)\C=C\C1=CC=CC=C1 DQFBYFPFKXHELB-VAWYXSNFSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224644A JPS60116132A (ja) | 1983-11-29 | 1983-11-29 | ネガ型レジストパタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224644A JPS60116132A (ja) | 1983-11-29 | 1983-11-29 | ネガ型レジストパタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60116132A JPS60116132A (ja) | 1985-06-22 |
| JPH0318179B2 true JPH0318179B2 (fr) | 1991-03-11 |
Family
ID=16816943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58224644A Granted JPS60116132A (ja) | 1983-11-29 | 1983-11-29 | ネガ型レジストパタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60116132A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621230A (ja) * | 1985-06-27 | 1987-01-07 | Toshiba Corp | パタ−ン形成方法 |
| US7326523B2 (en) | 2004-12-16 | 2008-02-05 | International Business Machines Corporation | Low refractive index polymers as underlayers for silicon-containing photoresists |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159873A (en) * | 1978-06-08 | 1979-12-18 | Nec Corp | Forming method of pattern on thin film |
| JPS5618420A (en) * | 1979-07-23 | 1981-02-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5778529A (en) * | 1980-11-05 | 1982-05-17 | Nec Corp | Resist material |
| JPS5789751A (en) * | 1980-11-25 | 1982-06-04 | Japan Synthetic Rubber Co Ltd | Photosensitive material |
| JPS57189136A (en) * | 1981-04-20 | 1982-11-20 | Gte Laboratories Inc | Lithographic resist of high resolution and method thereof |
| JPS57192947A (en) * | 1981-05-25 | 1982-11-27 | Nec Corp | Resist material |
| JPS5834921A (ja) * | 1981-08-27 | 1983-03-01 | Nec Corp | 半導体装置の製造方法 |
| JPS5865432A (ja) * | 1981-08-21 | 1983-04-19 | ゼネラル・エレクトリツク・カンパニイ | ポリメチルメタクリレ−トのエツチング法 |
| JPS58105142A (ja) * | 1981-12-17 | 1983-06-22 | Nippon Telegr & Teleph Corp <Ntt> | 遠紫外線感応性レジスト材料及びその使用方法 |
| JPS58153932A (ja) * | 1982-03-09 | 1983-09-13 | Matsushita Electric Ind Co Ltd | 写真蝕刻方法 |
| JPS58189627A (ja) * | 1982-04-30 | 1983-11-05 | Japan Synthetic Rubber Co Ltd | 感光材料 |
| JPS58192035A (ja) * | 1982-05-03 | 1983-11-09 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | ネガテイブ型レジストとして有用な重合体組成物の製造方法 |
-
1983
- 1983-11-29 JP JP58224644A patent/JPS60116132A/ja active Granted
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159873A (en) * | 1978-06-08 | 1979-12-18 | Nec Corp | Forming method of pattern on thin film |
| JPS5618420A (en) * | 1979-07-23 | 1981-02-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5778529A (en) * | 1980-11-05 | 1982-05-17 | Nec Corp | Resist material |
| JPS5789751A (en) * | 1980-11-25 | 1982-06-04 | Japan Synthetic Rubber Co Ltd | Photosensitive material |
| JPS57189136A (en) * | 1981-04-20 | 1982-11-20 | Gte Laboratories Inc | Lithographic resist of high resolution and method thereof |
| JPS57192947A (en) * | 1981-05-25 | 1982-11-27 | Nec Corp | Resist material |
| JPS5865432A (ja) * | 1981-08-21 | 1983-04-19 | ゼネラル・エレクトリツク・カンパニイ | ポリメチルメタクリレ−トのエツチング法 |
| JPS5834921A (ja) * | 1981-08-27 | 1983-03-01 | Nec Corp | 半導体装置の製造方法 |
| JPS58105142A (ja) * | 1981-12-17 | 1983-06-22 | Nippon Telegr & Teleph Corp <Ntt> | 遠紫外線感応性レジスト材料及びその使用方法 |
| JPS58153932A (ja) * | 1982-03-09 | 1983-09-13 | Matsushita Electric Ind Co Ltd | 写真蝕刻方法 |
| JPS58189627A (ja) * | 1982-04-30 | 1983-11-05 | Japan Synthetic Rubber Co Ltd | 感光材料 |
| JPS58192035A (ja) * | 1982-05-03 | 1983-11-09 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | ネガテイブ型レジストとして有用な重合体組成物の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60116132A (ja) | 1985-06-22 |
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