JPH03155677A - 伝導度変調型ｍｏｓｆｅｔ - Google Patents
伝導度変調型ｍｏｓｆｅｔInfo
- Publication number
- JPH03155677A JPH03155677A JP5308590A JP5308590A JPH03155677A JP H03155677 A JPH03155677 A JP H03155677A JP 5308590 A JP5308590 A JP 5308590A JP 5308590 A JP5308590 A JP 5308590A JP H03155677 A JPH03155677 A JP H03155677A
- Authority
- JP
- Japan
- Prior art keywords
- region
- bipolar transistor
- junction
- electrode
- high resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 230000003071 parasitic effect Effects 0.000 abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 239000000969 carrier Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- 241000155247 Ixos Species 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5308590A JPH03155677A (ja) | 1989-08-19 | 1990-03-05 | 伝導度変調型ｍｏｓｆｅｔ |
| DE19904026121 DE4026121B4 (de) | 1989-08-19 | 1990-08-17 | Leitfähigkeitsmodulations-MOSFET |
| US07/815,761 US5273917A (en) | 1989-08-19 | 1992-01-02 | Method for manufacturing a conductivity modulation MOSFET |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21396889 | 1989-08-19 | ||
| JP1-213968 | 1989-08-19 | ||
| JP5308590A JPH03155677A (ja) | 1989-08-19 | 1990-03-05 | 伝導度変調型ｍｏｓｆｅｔ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03155677A true JPH03155677A (ja) | 1991-07-03 |
Family
ID=26393796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5308590A Pending JPH03155677A (ja) | 1989-08-19 | 1990-03-05 | 伝導度変調型ｍｏｓｆｅｔ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH03155677A (de) |
| DE (1) | DE4026121B4 (de) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001135814A (ja) * | 1999-11-02 | 2001-05-18 | Shindengen Electric Mfg Co Ltd | 縦型ｍｏｓ電界効果トランジスタ |
| JP2002252350A (ja) * | 2000-08-30 | 2002-09-06 | Shindengen Electric Mfg Co Ltd | 電界効果トランジスタ |
| JP2002345242A (ja) * | 2001-05-14 | 2002-11-29 | Shindengen Electric Mfg Co Ltd | ワールドワイド電源 |
| WO2005067057A1 (ja) * | 2004-01-07 | 2005-07-21 | Shindengen Electric Manufacturing Co., Ltd. | 半導体装置 |
| US20050227461A1 (en) * | 2000-05-05 | 2005-10-13 | International Rectifier Corporation | Semiconductor device having increased switching speed |
| JP2007208037A (ja) * | 2006-02-02 | 2007-08-16 | Sanken Electric Co Ltd | 半導体素子 |
| JP2007273647A (ja) * | 2006-03-30 | 2007-10-18 | Shindengen Electric Mfg Co Ltd | Ｉｇｂｔの製造方法 |
| JP2008047772A (ja) * | 2006-08-18 | 2008-02-28 | Sanken Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
| JP2008109028A (ja) * | 2006-10-27 | 2008-05-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2010045123A (ja) * | 2008-08-11 | 2010-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| WO2013058191A1 (ja) * | 2011-10-17 | 2013-04-25 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP5460320B2 (ja) * | 2007-07-31 | 2014-04-02 | ローム株式会社 | 半導体装置およびその製造方法 |
| US8766325B2 (en) | 2011-10-17 | 2014-07-01 | Rohm Co., Ltd. | Semiconductor device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3182463A1 (de) * | 2015-12-17 | 2017-06-21 | ABB Technology AG | Rückwärtssperrendes leistungshalbleiterbauelement |
| CN117153892A (zh) * | 2023-08-07 | 2023-12-01 | 深圳市盛邦半导体有限公司 | 抗辐射加固肖特基二极管及其制作方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61150280A (ja) * | 1984-12-24 | 1986-07-08 | Shindengen Electric Mfg Co Ltd | 縦型ｍｏｓトランジスタ |
| JPH02281660A (ja) * | 1989-04-21 | 1990-11-19 | Nec Corp | 縦型絶縁ゲート電導度変調型トランジスタ |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3628857A1 (de) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | Halbleitereinrichtung |
| US4809045A (en) * | 1985-09-30 | 1989-02-28 | General Electric Company | Insulated gate device |
-
1990
- 1990-03-05 JP JP5308590A patent/JPH03155677A/ja active Pending
- 1990-08-17 DE DE19904026121 patent/DE4026121B4/de not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61150280A (ja) * | 1984-12-24 | 1986-07-08 | Shindengen Electric Mfg Co Ltd | 縦型ｍｏｓトランジスタ |
| JPH02281660A (ja) * | 1989-04-21 | 1990-11-19 | Nec Corp | 縦型絶縁ゲート電導度変調型トランジスタ |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001135814A (ja) * | 1999-11-02 | 2001-05-18 | Shindengen Electric Mfg Co Ltd | 縦型ｍｏｓ電界効果トランジスタ |
| US8314002B2 (en) * | 2000-05-05 | 2012-11-20 | International Rectifier Corporation | Semiconductor device having increased switching speed |
| US20050227461A1 (en) * | 2000-05-05 | 2005-10-13 | International Rectifier Corporation | Semiconductor device having increased switching speed |
| JP2002252350A (ja) * | 2000-08-30 | 2002-09-06 | Shindengen Electric Mfg Co Ltd | 電界効果トランジスタ |
| JP2002345242A (ja) * | 2001-05-14 | 2002-11-29 | Shindengen Electric Mfg Co Ltd | ワールドワイド電源 |
| WO2005067057A1 (ja) * | 2004-01-07 | 2005-07-21 | Shindengen Electric Manufacturing Co., Ltd. | 半導体装置 |
| KR100816702B1 (ko) * | 2004-01-07 | 2008-03-27 | 신덴겐코교 가부시키가이샤 | 반도체 장치 |
| US7282764B2 (en) | 2004-01-07 | 2007-10-16 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device |
| JP2007208037A (ja) * | 2006-02-02 | 2007-08-16 | Sanken Electric Co Ltd | 半導体素子 |
| JP2007273647A (ja) * | 2006-03-30 | 2007-10-18 | Shindengen Electric Mfg Co Ltd | Ｉｇｂｔの製造方法 |
| JP2008047772A (ja) * | 2006-08-18 | 2008-02-28 | Sanken Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
| JP2008109028A (ja) * | 2006-10-27 | 2008-05-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP5460320B2 (ja) * | 2007-07-31 | 2014-04-02 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP2010045123A (ja) * | 2008-08-11 | 2010-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| WO2013058191A1 (ja) * | 2011-10-17 | 2013-04-25 | ローム株式会社 | 半導体装置およびその製造方法 |
| US8766325B2 (en) | 2011-10-17 | 2014-07-01 | Rohm Co., Ltd. | Semiconductor device |
| US8927347B2 (en) | 2011-10-17 | 2015-01-06 | Rohm Co., Ltd. | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4026121B4 (de) | 2006-04-06 |
| DE4026121A1 (de) | 1991-03-21 |
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