JPH03139824A - 半導体薄膜の堆積方法 - Google Patents
半導体薄膜の堆積方法Info
- Publication number
- JPH03139824A JPH03139824A JP27793889A JP27793889A JPH03139824A JP H03139824 A JPH03139824 A JP H03139824A JP 27793889 A JP27793889 A JP 27793889A JP 27793889 A JP27793889 A JP 27793889A JP H03139824 A JPH03139824 A JP H03139824A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- thin film
- substrate
- film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 60
- 239000001257 hydrogen Substances 0.000 claims abstract description 60
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 239000012159 carrier gas Substances 0.000 claims abstract description 7
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 23
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 108010074864 Factor XI Proteins 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793889A JPH03139824A (ja) | 1989-10-25 | 1989-10-25 | 半導体薄膜の堆積方法 |
| US07/800,711 US5214002A (en) | 1989-10-25 | 1991-12-03 | Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793889A JPH03139824A (ja) | 1989-10-25 | 1989-10-25 | 半導体薄膜の堆積方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09125182A Division JP3084395B2 (ja) | 1997-05-15 | 1997-05-15 | 半導体薄膜の堆積方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03139824A true JPH03139824A (ja) | 1991-06-14 |
| JPH0587171B2 JPH0587171B2 (enrdf_load_stackoverflow) | 1993-12-15 |
Family
ID=17590376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27793889A Granted JPH03139824A (ja) | 1989-10-25 | 1989-10-25 | 半導体薄膜の堆積方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03139824A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010555A1 (en) * | 1991-11-14 | 1993-05-27 | Kanegafuchi Chemical Industry Co., Ltd. | Polycristalline silicon thin film and process for forming it at low temperature |
| JPH0897159A (ja) * | 1994-09-29 | 1996-04-12 | Handotai Process Kenkyusho:Kk | エピタキシャル成長方法および成長装置 |
| US5624873A (en) * | 1993-11-12 | 1997-04-29 | The Penn State Research Foundation | Enhanced crystallization of amorphous films |
| KR20000048288A (ko) * | 1998-12-22 | 2000-07-25 | 마찌다 가쯔히꼬 | 결정성실리콘계 반도체박막의 제조방법 |
| US6773762B1 (en) | 1997-11-20 | 2004-08-10 | Tokyo Electron Limited | Plasma treatment method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101050377B1 (ko) | 2001-02-12 | 2011-07-20 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
| US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118122A (ja) * | 1984-07-04 | 1986-01-27 | Hitachi Ltd | 半導体製造装置 |
| JPS6126774A (ja) * | 1984-07-16 | 1986-02-06 | Canon Inc | 非晶質シリコン膜形成装置 |
| JPS61151092A (ja) * | 1984-12-24 | 1986-07-09 | Hitachi Ltd | 薄膜形成方法及び薄膜形成装置 |
| JPS62213118A (ja) * | 1986-03-13 | 1987-09-19 | Nec Corp | 薄膜形成方法およびその装置 |
| JPH01238112A (ja) * | 1988-03-18 | 1989-09-22 | Sanyo Electric Co Ltd | 半導体処理方法 |
-
1989
- 1989-10-25 JP JP27793889A patent/JPH03139824A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118122A (ja) * | 1984-07-04 | 1986-01-27 | Hitachi Ltd | 半導体製造装置 |
| JPS6126774A (ja) * | 1984-07-16 | 1986-02-06 | Canon Inc | 非晶質シリコン膜形成装置 |
| JPS61151092A (ja) * | 1984-12-24 | 1986-07-09 | Hitachi Ltd | 薄膜形成方法及び薄膜形成装置 |
| JPS62213118A (ja) * | 1986-03-13 | 1987-09-19 | Nec Corp | 薄膜形成方法およびその装置 |
| JPH01238112A (ja) * | 1988-03-18 | 1989-09-22 | Sanyo Electric Co Ltd | 半導体処理方法 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010555A1 (en) * | 1991-11-14 | 1993-05-27 | Kanegafuchi Chemical Industry Co., Ltd. | Polycristalline silicon thin film and process for forming it at low temperature |
| US5387542A (en) * | 1991-11-14 | 1995-02-07 | Kanegafuchi Chemical Industry Co., Ltd. | Polycrystalline silicon thin film and low temperature fabrication method thereof |
| US5624873A (en) * | 1993-11-12 | 1997-04-29 | The Penn State Research Foundation | Enhanced crystallization of amorphous films |
| JPH0897159A (ja) * | 1994-09-29 | 1996-04-12 | Handotai Process Kenkyusho:Kk | エピタキシャル成長方法および成長装置 |
| US5769942A (en) * | 1994-09-29 | 1998-06-23 | Semiconductor Process Laboratory Co. | Method for epitaxial growth |
| US6110290A (en) * | 1994-09-29 | 2000-08-29 | Semiconductor Process Laboratory Co. | Method for epitaxial growth and apparatus for epitaxial growth |
| US6773762B1 (en) | 1997-11-20 | 2004-08-10 | Tokyo Electron Limited | Plasma treatment method |
| KR20000048288A (ko) * | 1998-12-22 | 2000-07-25 | 마찌다 가쯔히꼬 | 결정성실리콘계 반도체박막의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0587171B2 (enrdf_load_stackoverflow) | 1993-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |