JPH0312472B2 - - Google Patents

Info

Publication number
JPH0312472B2
JPH0312472B2 JP57042177A JP4217782A JPH0312472B2 JP H0312472 B2 JPH0312472 B2 JP H0312472B2 JP 57042177 A JP57042177 A JP 57042177A JP 4217782 A JP4217782 A JP 4217782A JP H0312472 B2 JPH0312472 B2 JP H0312472B2
Authority
JP
Japan
Prior art keywords
input
output
protection device
bonding pad
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57042177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58159363A (ja
Inventor
Koji Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57042177A priority Critical patent/JPS58159363A/ja
Publication of JPS58159363A publication Critical patent/JPS58159363A/ja
Publication of JPH0312472B2 publication Critical patent/JPH0312472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP57042177A 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置 Granted JPS58159363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57042177A JPS58159363A (ja) 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57042177A JPS58159363A (ja) 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置

Publications (2)

Publication Number Publication Date
JPS58159363A JPS58159363A (ja) 1983-09-21
JPH0312472B2 true JPH0312472B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=12628698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57042177A Granted JPS58159363A (ja) 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置

Country Status (1)

Country Link
JP (1) JPS58159363A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669080B2 (ja) * 1985-01-31 1994-08-31 株式会社東芝 半導体集積回路装置
JPS61168650U (enrdf_load_stackoverflow) * 1985-04-10 1986-10-20
JPS63114409A (ja) * 1986-10-31 1988-05-19 Hitachi Ltd フリツプフロツプ回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132685A (en) * 1976-04-28 1977-11-07 Toshiba Corp Semiconductor integrated circuit device
JPS5942468B2 (ja) * 1976-07-14 1984-10-15 日本電気株式会社 集積回路装置
JPS53116262A (en) * 1977-03-22 1978-10-11 Sumitomo Light Metal Ind Two stage disk for metal extrusion and metal extruding method
JPS5526683A (en) * 1978-08-16 1980-02-26 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device
JPS5763861A (en) * 1980-10-06 1982-04-17 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS58159363A (ja) 1983-09-21

Similar Documents

Publication Publication Date Title
US5843813A (en) I/O driver design for simultaneous switching noise minimization and ESD performance enhancement
US5087955A (en) Input-output circuit of reduced device area for semicustom semiconductor integrated circuit
JPH04349661A (ja) 半導体装置
JPH0144021B2 (enrdf_load_stackoverflow)
JPS6046545B2 (ja) 相補型mos記憶回路装置
JPH0312472B2 (enrdf_load_stackoverflow)
JP2602974B2 (ja) Cmos半導体集積回路装置
JPH0228362A (ja) 半導体集積回路装置
JPH0412627B2 (enrdf_load_stackoverflow)
JPH0532908B2 (enrdf_load_stackoverflow)
JP3038744B2 (ja) Cmos型半導体集積回路装置
JP3010911B2 (ja) 半導体装置
JP2525142B2 (ja) 半導体集積回路
JPH05175519A (ja) 半導体装置
JPH039559A (ja) 半導体集積装置
JPH0636596Y2 (ja) Cmos半導体装置
JPH029161A (ja) 半導体集積回路装置
JPS63200560A (ja) Cmos型半導体装置
JPS62252162A (ja) ゲ−ト保護回路
JPS607497Y2 (ja) Mosトランジスタの保護デバイス
JPS5885558A (ja) セミカスタム半導体装置
JPS61208863A (ja) Cmos半導体装置
JPS649737B2 (enrdf_load_stackoverflow)
JPH0244153B2 (enrdf_load_stackoverflow)
JPS61137360A (ja) 相補型mos集積回路装置