JPH0244153B2 - - Google Patents

Info

Publication number
JPH0244153B2
JPH0244153B2 JP58031186A JP3118683A JPH0244153B2 JP H0244153 B2 JPH0244153 B2 JP H0244153B2 JP 58031186 A JP58031186 A JP 58031186A JP 3118683 A JP3118683 A JP 3118683A JP H0244153 B2 JPH0244153 B2 JP H0244153B2
Authority
JP
Japan
Prior art keywords
latch
circuit
diode
voltage
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58031186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59155953A (ja
Inventor
Hiroshi Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58031186A priority Critical patent/JPS59155953A/ja
Publication of JPS59155953A publication Critical patent/JPS59155953A/ja
Publication of JPH0244153B2 publication Critical patent/JPH0244153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58031186A 1983-02-24 1983-02-24 ラツチアツプ防止回路 Granted JPS59155953A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58031186A JPS59155953A (ja) 1983-02-24 1983-02-24 ラツチアツプ防止回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58031186A JPS59155953A (ja) 1983-02-24 1983-02-24 ラツチアツプ防止回路

Publications (2)

Publication Number Publication Date
JPS59155953A JPS59155953A (ja) 1984-09-05
JPH0244153B2 true JPH0244153B2 (enrdf_load_stackoverflow) 1990-10-02

Family

ID=12324401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58031186A Granted JPS59155953A (ja) 1983-02-24 1983-02-24 ラツチアツプ防止回路

Country Status (1)

Country Link
JP (1) JPS59155953A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059770A (ja) * 1983-09-13 1985-04-06 Nec Corp 半導体装置
JP4933871B2 (ja) * 2006-09-28 2012-05-16 紀伊産業株式会社 スクイズ性塗布容器

Also Published As

Publication number Publication date
JPS59155953A (ja) 1984-09-05

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