JPS58159363A - 半導体集積回路の入出力保護装置 - Google Patents

半導体集積回路の入出力保護装置

Info

Publication number
JPS58159363A
JPS58159363A JP57042177A JP4217782A JPS58159363A JP S58159363 A JPS58159363 A JP S58159363A JP 57042177 A JP57042177 A JP 57042177A JP 4217782 A JP4217782 A JP 4217782A JP S58159363 A JPS58159363 A JP S58159363A
Authority
JP
Japan
Prior art keywords
input
output
drain region
protecting device
prescribed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57042177A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312472B2 (enrdf_load_stackoverflow
Inventor
Koji Eguchi
江口　宏次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57042177A priority Critical patent/JPS58159363A/ja
Publication of JPS58159363A publication Critical patent/JPS58159363A/ja
Publication of JPH0312472B2 publication Critical patent/JPH0312472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP57042177A 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置 Granted JPS58159363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57042177A JPS58159363A (ja) 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57042177A JPS58159363A (ja) 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置

Publications (2)

Publication Number Publication Date
JPS58159363A true JPS58159363A (ja) 1983-09-21
JPH0312472B2 JPH0312472B2 (enrdf_load_stackoverflow) 1991-02-20

Family

ID=12628698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57042177A Granted JPS58159363A (ja) 1982-03-17 1982-03-17 半導体集積回路の入出力保護装置

Country Status (1)

Country Link
JP (1) JPS58159363A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176146A (ja) * 1985-01-31 1986-08-07 Toshiba Corp 半導体集積回路装置
JPS61168650U (enrdf_load_stackoverflow) * 1985-04-10 1986-10-20
JPS63114409A (ja) * 1986-10-31 1988-05-19 Hitachi Ltd フリツプフロツプ回路

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132685A (en) * 1976-04-28 1977-11-07 Toshiba Corp Semiconductor integrated circuit device
JPS539484A (en) * 1976-07-14 1978-01-27 Nec Corp Integrated circuit device
JPS53116262A (en) * 1977-03-22 1978-10-11 Sumitomo Light Metal Ind Two stage disk for metal extrusion and metal extruding method
JPS5526683A (en) * 1978-08-16 1980-02-26 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device
JPS5763861A (en) * 1980-10-06 1982-04-17 Nec Corp Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132685A (en) * 1976-04-28 1977-11-07 Toshiba Corp Semiconductor integrated circuit device
JPS539484A (en) * 1976-07-14 1978-01-27 Nec Corp Integrated circuit device
JPS53116262A (en) * 1977-03-22 1978-10-11 Sumitomo Light Metal Ind Two stage disk for metal extrusion and metal extruding method
JPS5526683A (en) * 1978-08-16 1980-02-26 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS574151A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Mos integrated circuit device
JPS5763861A (en) * 1980-10-06 1982-04-17 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176146A (ja) * 1985-01-31 1986-08-07 Toshiba Corp 半導体集積回路装置
JPS61168650U (enrdf_load_stackoverflow) * 1985-04-10 1986-10-20
JPS63114409A (ja) * 1986-10-31 1988-05-19 Hitachi Ltd フリツプフロツプ回路

Also Published As

Publication number Publication date
JPH0312472B2 (enrdf_load_stackoverflow) 1991-02-20

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