JPH0262947B2 - - Google Patents

Info

Publication number
JPH0262947B2
JPH0262947B2 JP59166709A JP16670984A JPH0262947B2 JP H0262947 B2 JPH0262947 B2 JP H0262947B2 JP 59166709 A JP59166709 A JP 59166709A JP 16670984 A JP16670984 A JP 16670984A JP H0262947 B2 JPH0262947 B2 JP H0262947B2
Authority
JP
Japan
Prior art keywords
wafer
integrated circuit
circuit element
measuring
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59166709A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6143441A (ja
Inventor
Tsugio Tawara
Sumio Doi
Teijiro Ootsuki
Osamu Higaki
Isao Furuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59166709A priority Critical patent/JPS6143441A/ja
Publication of JPS6143441A publication Critical patent/JPS6143441A/ja
Publication of JPH0262947B2 publication Critical patent/JPH0262947B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59166709A 1984-08-07 1984-08-07 半導体装置のテスト方法 Granted JPS6143441A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59166709A JPS6143441A (ja) 1984-08-07 1984-08-07 半導体装置のテスト方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59166709A JPS6143441A (ja) 1984-08-07 1984-08-07 半導体装置のテスト方法

Publications (2)

Publication Number Publication Date
JPS6143441A JPS6143441A (ja) 1986-03-03
JPH0262947B2 true JPH0262947B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-27

Family

ID=15836304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59166709A Granted JPS6143441A (ja) 1984-08-07 1984-08-07 半導体装置のテスト方法

Country Status (1)

Country Link
JP (1) JPS6143441A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015141985A (ja) 2014-01-28 2015-08-03 株式会社東芝 検査装置、及び検査方法
JP6176201B2 (ja) * 2014-07-22 2017-08-09 トヨタ自動車株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6143441A (ja) 1986-03-03

Similar Documents

Publication Publication Date Title
JPH0262947B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2657315B2 (ja) プローブカード
US6340604B1 (en) Contactor and semiconductor device inspecting method
JPS62261139A (ja) 半導体装置
JPH10154732A (ja) 半導体素子分離端欠陥評価テスト構造および該テスト構造を用いた評価方法
JPH01219566A (ja) プローブ・カード
JP3093216B2 (ja) 半導体装置及びその検査方法
JP3575073B2 (ja) 絶縁分離型半導体装置の検査方法および絶縁分離型半導体装置
JP2002141474A (ja) プレーナ型半導体チップとそのテスト方法並びに半導体ウエハ
JPS60167344A (ja) 半導体ウエ−ハの検査装置
JPS6231148A (ja) 半導体装置
JPS5923422Y2 (ja) 半導体素子形成ウエ−ハ
JPS618939A (ja) 半導体装置
KR100529453B1 (ko) 프로브 카드용 니들과 그 제조 방법
JPS6118144A (ja) 半導体デバイス測定装置
JPH03286545A (ja) 半導体装置
JPS6222448A (ja) Ｉｃの形成されたウエ−ハ
JPH11121553A (ja) ウェハ一括型測定検査のためプローブカードおよびそのプローブカードを用いた半導体装置の検査方法
KR100248207B1 (ko) 반도체 소자의 테스트 패턴
JP2008159641A (ja) 半導体基板および半導体装置の検査方法
JPH06252234A (ja) 半導体装置
JPS62193137A (ja) 半導体装置の製造方法
JPH08340028A (ja) 半導体素子の試験方法
JPH02297993A (ja) 膜回路装置の製造方法
JPH05304192A (ja) 半導体ウェーハおよびその検査方法